E3M0120090D

E3M0120090D VDS 900 V ID @ 25˚C Silicon Carbide Power MOSFET E-Series Automotive RDS(on) 23 A 120 mΩ N-Channel Enhancement Mode Features • • • • • • Package 3rd generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Automotive Qualified (AEC-Q101) and PPAP Capable Benefits • • • • Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications • • • Automotive EV battery chargers Renewable energy High voltage DC/DC converters Part Number Package Marking E3M0120090D TO-247-3 E3M0120090 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Parameter Symbol Unit Test Conditions Note VDSmax Drain - Source Voltage 900 V VGSmax Gate - Source Voltage -8/+18 V Note: 1 VGSop Gate - Source Voltage (Recommended operating values) -4/+15 V Note: 2 ID Continuous Drain Current ID(pulse) PD TJ , Tstg 23 15 A VGS = 0 V, ID = 100 μA VGS = 15 V, TC = 25˚C Fig. 19 VGS = 15 V, TC = 100˚C Pulsed Drain Current 50 A Pulse width tP limited by Tjmax Fig. 22 Power Dissipation 97 W TC=25˚C, TJ = 150 ˚C Fig. 20 -55 to +150 ˚C Operating Junction and Storage Temperature TL Solder Temperature 260 ˚C Md Mounting Torque 1 8.8 Nm lbf-in Note (1): When using MOSFET Body Diode VGSmax = -4V/+18V Note (2): MOSFET can also safely operate at 0/+15 V 1 Value E3M0120090D Rev. - , 07-2018 1.6mm (0.063”) from case for 10s M3 or 6-32 screw Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage Min. Typ. Max. 900 1.7 2.1 3.5 1.6 Unit Test Conditions V VGS = 0 V, ID = 100 μA V VDS = VGS, ID = 3 mA V VDS = VGS, ID = 3 mA, TJ = 150ºC IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 900 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V 120 155 RDS(on) Drain-Source On-State Resistance 170 7.7 gfs Transconductance Ciss Input Capacitance 350 Coss Output Capacitance 40 Crss Reverse Transfer Capacitance 3 Eoss Coss Stored Energy 9 EON Turn-On Switching Energy (Body Diode FWD) 170 EOFF Turn Off Switching Energy (Body Diode FWD) 25 td(on) Turn-On Delay Time 27 Rise Time 10 Turn-Off Delay Time 25 Fall Time 8 Internal Gate Resistance 16 tr td(off) tf RG(int) Qgs Gate to Source Charge 4.8 Qgd Gate to Drain Charge 5.0 Qg Total Gate Charge 17.3 mΩ S 6.7 Note pF VGS = 15 V, ID = 15 A VGS = 15 V, ID = 15 A, TJ = 150ºC VDS= 20 V, IDS= 15 A VDS= 20 V, IDS= 15 A, TJ = 150ºC Fig. 4, 5, 6 Fig. 7 Fig. 17, 18 VGS = 0 V, VDS = 600 V f = 1 MHz μJ Fig. 11 VAC = 25 mV Fig. 16 μJ VDS = 400 V, VGS = -4 V/15 V, ID = 15 A, RG(ext) = 2.5Ω, L= 142 μH, TJ = 150ºC Fig. 26, 29 ns VDD = 400 V, VGS = -4 V/15 V ID = 15 A, RG(ext) = 2.5 Ω, Timing relative to VDS Inductive load Fig. 27, 29 Ω f = 1 MHz, VAC = 25 mV nC VDS = 400 V, VGS = -4 V/15 V ID = 15 A Per IEC60747-8-4 pg 21 Fig. 12 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol VSD IS IS, pulse Parameter Typ. Diode Forward Voltage Max. Unit Test Conditions 4.8 V VGS = -4 V, ISD = 7.5 A 4.4 V VGS = -4 V, ISD = 7.5 A, TJ = 150 °C Note Fig. 8, 9, 10 Continuous Diode Forward Current 21 A VGS = -4 V, TC = 25˚C Note 1 Diode pulse Current 50 A VGS = -4 V, pulse width tP limited by Tjmax Note 1 VGS = -4 V, ISD = 7.5 A, VR = 400 V dif/dt = 900 A/µs, TJ = 150 °C Note 1 trr Reverse Recover time 24 ns Qrr Reverse Recovery Charge 115 nC Irrm Peak Reverse Recovery Current 6.2 A Thermal Characteristics Symbol Parameter Max. RθJC Thermal Resistance from Junction to Case 1.3 RθJA Thermal Resistance From Junction to Ambient 40 Unit Test Conditions °C/W Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode 2 E3M0120090D Rev. - , 07-2018 Note Fig. 21 Typical Performance 45 40 VGS = 15 V 35 VGS = 13 V 30 VGS = 11 V 25 20 VGS = 9 V 15 10 VGS = 7 V 5 VGS = 15 V Conditions: TJ = 25 °C tp = < 200 µs 40 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 45 Conditions: TJ = -55 °C tp = < 200 µs VGS = 13 V 35 VGS = 11 V 30 25 20 VGS = 9 V 15 10 VGS = 7 V 5 0 0 0 2 4 6 8 10 11 0 2 4 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -55 ºC 45 2.5 10 11 Conditions: IDS = 15 A VGS = 15 V tp < 200 µs VGS = 13 V 2.0 35 VGS = 11 V On Resistance, RDS On (P.U.) Drain-Source Current, IDS (A) 40 8 Figure 2. Output Characteristics TJ = 25 ºC VGS = 15 V Conditions: TJ = 150 °C tp = < 200 µs 6 Drain-Source Voltage, VDS (V) 30 25 VGS = 9 V 20 15 VGS = 7 V 10 1.5 1.0 0.5 5 0.0 0 0 2 4 6 8 10 -50 11 -25 0 Figure 3. Output Characteristics TJ = 150 ºC Conditions: VGS = 15 V tp < 200 µs 225 250 150 On Resistance, RDS On (mOhms) On Resistance, RDS On (mOhms) TJ = 150 °C 175 TJ = -55 °C 125 TJ = 25 °C 100 75 50 25 100 125 150 225 200 VGS = 11 V 175 150 VGS = 13 V 125 100 VGS = 15 V 75 50 25 0 0 0 5 10 15 20 25 30 35 Drain-Source Current, IDS (A) Figure 5. On-Resistance vs. Drain Current For Various Temperatures 3 75 Conditions: IDS = 15 A tp < 200 µs 275 200 50 Figure 4. Normalized On-Resistance vs. Temperature 300 250 25 Junction Temperature, TJ (°C) Drain-Source Voltage, VDS (V) E3M0120090D Rev. - , 07-2018 40 45 -50 -25 0 25 50 75 100 Junction Temperature, TJ (°C) Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 125 150 Typical Performance 35 30 -7 -6 -5 -4 -3 -2 -1 0 0 -5 TJ = 150 °C 25 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) -8 Conditions: VDS = 20 V tp < 200 µs TJ = 25 °C 20 TJ = -55 °C 15 10 VGS = -4 V -10 VGS = 0 V -15 -20 VGS = -2 V -25 -30 5 -35 Conditions: TJ = -55°C tp < 200 µs 0 0 2 4 6 8 10 12 14 Figure 7. Transfer Characteristic for Various Junction Temperatures -7 -6 -5 -4 -3 -2 Figure 8. Body Diode Characteristic at -55 ºC -1 0 -8 -7 -6 -5 -4 -3 -2 -1 0 -15 VGS = -2 V -20 -25 -30 -5 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) -10 VGS = 0 V VGS = -4 V -10 VGS = 0 V -15 -20 VGS = -2 V -25 -30 -35 Conditions: TJ = 25°C tp < 200 µs Drain-Source Voltage VDS (V) -35 Conditions: TJ = 150°C tp < 200 µs -40 -45 Drain-Source Voltage VDS (V) Figure 9. Body Diode Characteristic at 25 ºC Gate-Source Voltage, VGS (V) Threshold Voltage, Vth (V) 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 Junction Temperature TJ (°C) Figure 11. Threshold Voltage vs. Temperature 4 Conditions: IDS = 15 A IGS = 10 mA VDS = 400 V TJ = 25 °C 12 -25 E3M0120090D Rev. - , 07-2018 -45 16 Conditons VGS = VDS IDS = 3 mA -50 -40 Figure 10. Body Diode Characteristic at 150 ºC 3.0 2.5 0 0 -5 VGS = -4 V -45 Drain-Source Voltage VDS (V) Gate-Source Voltage, VGS (V) -8 -40 150 8 4 0 -4 0 4 8 12 16 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 20 Typical Performance -6 -5 -4 -3 -2 -1 0 -6 -5 -4 -3 -2 -1 0 0 -10 VGS = 5 V VGS = 10 V -20 VGS = 15 V VGS = 0 V Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) VGS = 0 V 0 -10 VGS = 5 V VGS = 10 V -20 VGS = 15 V -30 -30 Conditions: TJ = -55 °C tp < 200 µs Conditions: TJ = 25 °C tp < 200 µs -40 Drain-Source Voltage VDS (V) Figure 13. 3rd Quadrant Characteristic at -55 ºC -6 -5 -4 -3 -2 -1 -40 Drain-Source Voltage VDS (V) Figure 14. 3rd Quadrant Characteristic at 25 ºC 20 0 0 Drain-Source Current, IDS (A) VGS = 0 V VGS = 5 V VGS = 10 V -20 VGS = 15 V Stored Energy, EOSS (µJ) 15 -10 10 5 -30 Conditions: TJ = 150 °C tp < 200 µs 0 0 -40 Drain-Source Voltage VDS (V) 100 600 700 800 900 1000 Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss Capacitance (pF) Capacitance (pF) 10 500 1000 Coss 100 400 Figure 16. Output Capacitor Stored Energy Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss 300 Drain to Source Voltage, VDS (V) Figure 15. 3rd Quadrant Characteristic at 150 ºC 1000 200 Crss 100 Coss 10 Crss 1 1 0 50 100 Drain-Source Voltage, VDS (V) 150 Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V) 5 E3M0120090D Rev. - , 07-2018 200 0 100 200 300 400 500 600 Drain-Source Voltage, VDS (V) 700 Figure 18. Capacitances vs. Drain-Source Voltage (0 - 900V) 800 900 Typical Performance 120 Conditions: TJ ≤ 150 °C Conditions: TJ ≤ 150 °C Maximum Dissipated Power, Ptot (W) Drain-Source Continous Current, IDS (DC) (A) 25 20 15 10 5 0 -55 -30 -5 20 45 70 95 120 100 80 60 40 20 0 145 -55 Case Temperature, TC (°C) Drain-Source Current, IDS (A) Junction To Case Impedance, ZthJC (oC/W) 0.5 0.3 0.1 0.05 0.02 0.01 100E-6 1E-3 10E-3 Time, tp (s) 100E-3 Conditions: TC = 25 °C D = 0, Parameter: tp 1 10 100 1000 Figure 22. Safe Operating Area Conditions: TJ = 25 °C VDD = 400 V RG(ext) = 2.5 Ω VGS = -4V/+15 V FWD = E3M0120090D L = 142 μH 300 250 ETotal 300 EOn 100 10 µs 100 µs Drain-Source Voltage, VDS (V) 350 200 145 0.10 0.1 Switching Loss (uJ) Switching Loss (uJ) 400 120 100 ms 1 Conditions: TJ = 25 °C VDD = 600 V RG(ext) = 2.5 Ω VGS = -4V/+15 V FWD = E3M0120090D L = 142 μH 500 95 1.00 Figure 21. Transient Thermal Impedance (Junction - Case) 600 70 1 ms 0.01 10E-6 45 Limited by RDS On 10.00 SinglePulse 10E-3 1E-6 20 Figure 20. Maximum Power Dissipation Derating vs. Case Temperature 1 100E-3 -5 Case Temperature, TC (°C) Figure 19. Continuous Drain Current Derating vs. Case Temperature 200 ETotal 150 EOn 100 50 EOff 0 EOff 0 0 5 10 15 20 Drain to Source Current, IDS (A) Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 600V) 6 -30 E3M0120090D Rev. - , 07-2018 25 0 5 10 15 20 Drain to Source Current, IDS (A) Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD = 400V) 25 Typical Performance 250 Switching Loss (uJ) 250 Conditions: TJ = 25 °C VDD = 400 V IDS = 20 A VGS = -4V/+15 V FWD = E3M0120090D L = 142 μH 200 ETotal EOn 150 100 ETotal 150 EOn 100 50 EOff 50 EOff 0 0 0 5 10 15 20 25 External Gate Resistor RG(ext) (Ohms) 45 Conditions: TJ = 25 °C VDD = 400 V IDS = 15 A VGS = -4V/+15 V FWD = E3M0120090D L = 142 μH 40 35 30 0 25 50 75 100 125 Figure 26. Clamped Inductive Switching Energy vs. Temperature td(on) td(off) 25 20 15 tr 10 tf 5 0 0 5 10 15 20 25 External Gate Resistor RG(ext) (Ohms) Figure 27. Switching Times vs. RG(ext) 7 E3M0120090D Rev. - , 07-2018 150 Junction Temperature, TJ (°C) Figure 25. Clamped Inductive Switching Energy vs. RG(ext) Times (ns) Conditions: IDS = 15 A VDD = 400 V RG(ext) = 2.5 Ω VGS = -4V/+15 V FWD = E3M0120090D L = 142 μH 200 Switching Loss (uJ) 300 Figure 28. Switching Times Definition 175 Test Circuit Schematic Figure 29. Clamped Inductive Switching Test Circuit Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above. 8 E3M0120090D Rev. - , 07-2018 Package Dimensions POS Package TO-247-3 A T V U W Pinout Information: • • • Pin 1 = Gate Pin 2, 4 = Drain Pin 3 = Source Recommended Solder Pad Layout TO-247-3 9 E3M0120090D Rev. - , 07-2018 Inches Millimeters Min Max Min Max .190 .205 4.83 5.21 A1 .090 .100 2.29 2.54 A2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b2 .075 .085 1.91 2.16 b3 .113 .133 2.87 3.38 b4 .113 .123 2.87 3.13 c .022 .027 0.55 0.68 D .819 .831 20.80 21.10 D1 .640 .695 16.25 17.65 D2 .037 .049 0.95 1.25 E .620 .635 15.75 16.13 E1 .516 .557 13.10 14.15 E2 .145 .201 3.68 5.10 E3 .039 .075 1.00 1.90 E4 .487 .529 12.38 13.43 e .214 BSC N 3 5.44 BSC 3 L .780 .800 19.81 20.32 L1 .161 .173 4.10 4.40 ØP .138 .144 3.51 3.65 Q .216 .236 5.49 6.00 S .238 .248 6.04 6.30 T 9˚ 11˚ 9˚ 11˚ U 9˚ 11˚ 9˚ 11˚ V 2˚ 8˚ 2˚ 8˚ W 2˚ 8˚ 2˚ 8˚ Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links • • • LTSPICE Models: http://wolfspeed.com/power/tools-and-support SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 10 E3M0120090D Rev. -, 07-2018 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power