TSM033NA04LCR RLG

TSM033NA04LCR Taiwan Semiconductor N-Channel Power MOSFET 40V, 141A, 3.3mΩ FEATURES KEY PERFORMANCE PARAMETERS ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 VALUE UNIT VDS 40 V RDS(on) VGS = 10V 3.3 (max) VGS = 4.5V 4.4 mΩ Qg 23 nC en de d APPLICATIONS ● ● ● ● PARAMETER BLDC Motor Control Battery Power Management DC-DC converter Secondary Synchronous Rectification mm PDFN56 eco Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER No tR Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC = 25°C (Note 1) Pulsed Drain Current (Note 2) Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy Total Power Dissipation LIMIT UNIT VDS 40 V VGS ±20 V ID TA = 25°C Total Power Dissipation SYMBOL TC = 25°C TC = 125°C TA = 25°C TA = 125°C Operating Junction and Storage Temperature Range 141 20 A IDM 564 A IAS EAS 44 290 A mJ PD PD 125 25 2.6 0.5 W W TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 1 °C/W Junction to Ambient Thermal Resistance RӨJA 48 °C/W THERMAL PERFORMANCE PARAMETER Thermal Performance Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is determined by the user’s board design. 1 Version: B1611 TSM033NA04LCR Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 40 -- -- V Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) 1.2 1.7 2.5 V Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA -- -- 1 -- -- 100 Drain-Source Leakage Current IDSS VGS = 0V, VDS = 40V TJ = 125°C VGS = 10V, ID = 20A (Note 3) VGS = 4.5V, ID = 20A Forward Transconductance VDS = 5V, ID = 20A gfs (Note 4) VGS = 10V, VDS = 20V, Total Gate Charge ID = 20A Total Gate Charge ID = 20A Gate-Drain Charge Input Capacitance VGS = 0V, VDS = 20V Output Capacitance f = 1.0MHz Gate Resistance Switching e co Reverse Transfer Capacitance f = 1.0MHz (Note 4) tR Turn-On Delay Time 2.3 3.3 -- 3.3 4.4 -- 56 -- Turn-On Rise Time VGS = 10V, VDS = 20V, Turn-Off Delay Time ID = 13A, RG = 10Ω, Turn-Off Fall Time mΩ S Qg -- 47 -- Qg -- 23 -- Qgs -- 10 -- Qgd -- 8 -- Ciss -- 3130 -- Coss -- 670 -- Crss -- 137 -- Rg 0.5 1.7 3.4 td(on) -- 25.1 -- tr -- 15.2 -- td(off) -- 80 -- tf -- 11.8 -- VSD -- -- 1.2 V mm VGS = 4.5V, VDS = 20V, Gate-Source Charge -- en Dynamic (Note 3) RDS(on) de Drain-Source On-State Resistance µA d VGS = 0V, VDS = 40V nC pF Ω ns No Source-Drain Diode Forward Voltage (Note 3) VGS = 0V, IS = 20A Reverse Recovery Time IS = 20A , trr -- 42 -- ns Reverse Recovery Charge dI/dt = 100A/μs Qrr -- 63 -- nC Notes: 1. 2. 3. 4. Silicon limited current only. L = 0.3mH, VGS = 10V, VDS = 30V, RG = 25Ω, IAS = 44A, Starting TJ = 25°C Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. PACKAGE PACKING TSM033NA04LCR RLG PDFN56 2,500pcs / 13” Reel 2 Version: B1611 TSM033NA04LCR Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics 40 40 VGS=3V 16 8 24 25℃ -55℃ d 24 32 16 de ID, Drain Current (A) 32 ID, Drain Current (A) VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=4V VGS=3.5V 8 150℃ 0 0 1 2 3 en 0 0 4 3 4 Gate-Source Voltage vs. Gate Charge VGS=4.5V VDS=20V ID=20A 8 6 e co 0.003 VGS, Gate to Source Voltage (V) 10 0.004 0.002 VGS=10V 0.001 0 0 5 10 15 20 25 30 35 4 2 0 40 0 10 ID, Drain Current (A) No RDS(on), Drain-Source On-Resistance (Ω) VGS=10V ID=20A 1.6 1.4 1.2 1 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 30 40 50 On-Resistance vs. Gate-Source Voltage 2 1.8 20 Qg, Gate Charge (nC) On-Resistance vs. Junction Temperature RDS(on), Drain-Source On-Resistance (Normalized) 2 mm On-Resistance vs. Drain Current 0.005 tR RDS(ON), Drain-Source On-Resistance (Ω) 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 100 125 150 0.01 0.008 0.006 0.004 ID=20A 0.002 0 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) TJ, Junction Temperature (°C) 3 Version: B1611 TSM033NA04LCR Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) BVDSS vs. Junction Temperature Capacitance vs. Drain-Source Voltage CISS 3000 2500 2000 1500 1000 COSS 500 CRSS 0 1.1 1 0.9 0.8 5 10 15 20 25 30 35 40 -75 -50 -25 0 25 50 75 en 0 100 125 150 TJ, Junction Temperature (°C) VDS, Drain to Source Voltage (V) Source-Drain Diode Forward Current vs. Voltage mm Maximum Safe Operating Area, Junction-to-Case RDS(ON) 10 1 0.1 tR SINGLE PULSE RӨJC=1°C/W TC=25°C 1 10 e co 100 IS, Reverse Drain Current (A) 100 1000 ID, Drain Current (A) ID=1mA d C, Capacitance (pF) 3500 1.2 de BVDSS (Normalized) Drain-Source Breakdown Voltage 4000 10 25℃ 150℃ 1 -55℃ 0.1 100 0.2 VDS, Drain to Source Voltage (V) 0.4 0.6 0.8 1 No VSD, Body Diode Forward Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC 10 SINGLE PULSE RӨJC=1°C/W 1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.1 0.01 0.0001 0.001 0.01 Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC 0.1 1 t, Square Wave Pulse Duration (sec) 4 Version: B1611 TSM033NA04LCR Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) mm en de d PDFN56 No tR e co SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM TSC 033NA04 GYWWF G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code 5 Version: B1611 TSM033NA04LCR No tR e co mm en de d Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: B1611