C4D08120A

C4D08120A VRRM Silicon Carbide Schottky Diode IF (TC=135˚C) = Z-Rec Rectifier ® Q c Features • • • • • • 12 A =  37 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on VF TO-220-2 Benefits • • • • • = 1200 V Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 CASE PIN 2 Applications • • • • Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters Part Number Package Marking C4D08120A TO-220-2 C4D08120 Maximum Ratings (TC=25°C unless otherwise specified) Symbol Parameter Unit Test Conditions Note VRRM Repetitive Peak Reverse Voltage 1200 V VRSM Surge Peak Reverse Voltage 1300 V VR DC Peak Reverse Voltage 1200 V IF Continuous Forward Current 24.5 12 8 A TC=25˚C TC=135˚C TC=157˚C IFRM Repetitive Peak Forward Surge Current 37.5 25 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse IFSM Non-Repetitive Forward Surge Current 64 49.5 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse Fig. 8 IF,Max Non-Repetitive Peak Forward Current 600 480 A TC=25˚C, tP=10 ms, Pulse TC=110˚C, tP=10 ms, Pulse Fig. 8 136.5 59 W TC=25˚C TC=110˚C Fig. 4 200 V/ns VR=0-960V Ptot Power Dissipation dV/dt Diode dV/dt ruggedness ∫i2dt i2t value 20.5 12.25 A2s TJ Operating Junction Range -55 to +175 ˚C Tstg Storage Temperature Range -55 to +135 ˚C 1 8.8 Nm lbf-in TO-220 Mounting Torque 1 Value C4D08120A Rev. C, 10-2016 TC=25˚C, tP=10 ms TC=110˚C, tP=10 ms M3 Screw 6-32 Screw Fig. 3 Electrical Characteristics Symbol Parameter Typ. Max. Unit VF Forward Voltage 1.5 2.2 1.8 3 V IR Reverse Current 35 100 250 350 QC Total Capacitive Charge C EC Test Conditions Note IF = 8 A TJ=25°C IF = 8 A TJ=175°C Fig. 1 μA VR = 1200 V TJ=25°C VR = 1200 V TJ=175°C Fig. 2 37 nC VR = 800 V, IF = 8 A di/dt = 200 A/μs TJ = 25°C Fig. 5 Total Capacitance 560 37 27 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz VR = 800 V, TJ = 25˚C, f = 1 MHz Fig. 6 Capacitance Stored Energy 10.5 μJ VR = 800 V Fig. 7 Note:This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance from Junction to Case Typ. Unit Note 1.1 °C/W Fig. 9 Typical Performance 14 800 TJ=-55°C T = 25°C TJ= 75°C J T =125°C TJ =175°C J 12 700 600 10 IR (μA) IF (A) 500 8 6 400 300 4 200 2 100 0 0 0 0.5 1 1.5 2 2.5 3 VF (V) Figure 1. Forward Characteristics 2 TJ=-55°C T = 25°C TJ= 75°C J T =125°C TJ =175°C J C4D08120A Rev. C, 10-2016 3.5 4 0 500 1000 1500 VR (V) Figure 2. Reverse Characteristics 2000 Typical Performance 90 150 140 80 130 IF(peak) (A) 60 50 120 Duty Duty Duty Duty Duty 110 100 PTot (W) 10% 20% 30% 50% 70% DC 70 40 30 90 80 70 60 50 40 20 30 20 10 10 0 25 50 75 100 125 150 0 175 25 50 75 TC ˚C 100 125 150 175 TC ˚C Figure 4. Power Derating Figure 3. Current Derating 600 50 45 500 40 400 30 C (pF) Qc (nC) 35 25 20 300 200 15 10 100 5 0 0 0 200 400 600 800 0.1 1000 VR (V) Figure 5. Recovery Charge vs. Reverse Voltage 3 C4D08120A Rev. C, 10-2016 1 10 100 VR (V) Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 1000 1000 20.0 20 18 18.0 16 16.0 EC Capacitive Energy (uJ) C 14 14.0 (A) IFSMIFSM (A) E (mJ) 12 12.0 10 10.0 8.08 100 100 TJ_initial = 25°C T = 110°C J_initial 6.06 4.04 2.02 100 1E-05 1E-04 1E-03 1E-02 1.E-05 1.E-04 1.E-03 1.E-02 0.00 0 200 400 600 800 1000 0 200 400 600 800 1000 tp(s) tp (s) VR Reverse Voltage (V) VR (V) Figure 7. Typical Capacitance Stored Energy Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) Thermal Resistance (˚C/W) 1 0.5 0.3 0.1 100E-3 0.05 0.02 SinglePulse 0.01 10E-3 1E-6 10E-6 100E-6 1E-3 T (Sec) 10E-3 Figure 9. Transient Thermal Impedance 4 C4D08120A Rev. C, 10-2016 100E-3 1 Package Dimensions Package TO-220-2 POS PIN 1 PIN 2 CASE Inches Millimeters Min Max Min Max A .381 .410 9.677 10.414 6.477 B .235 .255 5.969 C .100 .120 2.540 3.048 D .223 .337 5.664 8.560 D1 .457-.490 11.60-12.45 typ D2 .277-.303 typ 7.04-7.70 typ D3 .244-.252 typ 6.22-6.4 typ E .590 .615 14.986 15.621 E1 .302 .326 7.68 8.28 E2 .227 251 5.77 6.37 F .143 .153 3.632 3.886 G 1.105 1.147 28.067 29.134 H .500 .550 12.700 13.970 L .025 .036 .635 .914 M .045 .055 1.143 1.550 N .195 .205 4.953 5.207 P .165 .185 4.191 4.699 Q .048 .054 1.219 1.372 S 3° 6° 3° 6° 6° T 3° 6° 3° U 3° 6° 3° 6° V .094 .110 2.388 2.794 W .014 .025 .356 .635 X 3° 5.5° 3° 5.5° Y .385 .410 9.779 10.414 z .130 .150 3.302 3.810 NOTE: 1. Dimension L, M, W apply for Solder Dip Finish Recommended Solder Pad Layout TO-220-2 Part Number Package Marking C4D08120A TO-220-2 C4D08120 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 C4D08120A Rev. C, 10-2016 Diode Model Diode Model CSD04060 Vf T = VT + If*RT VfT = VT+If*RT VT= 0.965 + (Tj * -1.3*10-3) RT= 0.096 + (Tj * 1.06*10-3) VT = 0.96 + (TJ* -2.1*10-3) RT = 0.06+(TJ* 8.0*10-4) Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C VT RT Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C4D08120A Rev. C, 10-2016 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power