1N4148WT

1N4148WT SOD-523 Plastic-Encapsulate Diodes FEATURES     SOD-523 Small Package Low Reverse Current Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion T4 Symbol Parameter Non-Repetitive Peak Reverse Voltage VR Reverse Voltage Peak Repetitive Reverse Voltage VRWM Working Peak Reverse Voltage 　Ｓ RMS Reverse Voltage ｅｍ VRRM ｉｃ VRM VR(RMS) ｏｎ MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) ｄｕ The marking bar indicates the cathode Solid dot = Green molding compound device,if none,the normal device. ｃｔ ｏｒ MARKING:T4 Value Unit 100 V 75 V 53 V Average Rectified Output Current 150 mA IFM Forward Continuous Current 300 mA IFSM Non-repetitive Peak Forward Surge Current@t= 8.3ms 2 A Power Dissipation 150 mW Thermal Resistance from Junction to Ambient 833 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ PD ＪＳ ＭＩ RΘJA ＣＲ Ｏ IO ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Reverse voltage V(BR) Reverse current IR Forward voltage Total capacitance Reverse recovery time Test conditions IR=1μA trr Typ Max 75 Unit V VR=75V 1 µA VR=20V 25 nA IF=1mA 0.715 V IF=10mA 0.855 V IF=50mA 1 V IF=150mA 1.25 V VR=0V,f=1MHz 2 pF IF= IR =10mA, Irr=0.1*IR,RL=100Ω 4 ns VF Ctot Min ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第１／３页 1N4148WT SOD-523 Plastic-Encapsulate Diodes Forward Characteristics Reverse 1000 200 Characteristics 100 0.1 0.01 0.0 ｏｒ 1 100 Ta=25℃ 10 ｃｔ REVERSE CURRENT IR T= a 2 5℃ FORWARD CURRENT IF T= a 1 00 ℃ 10 1 0.2 0.4 0.6 VF 1.0 1.2 0 (V) 20 40 REVERSE VOLTAGE 60 VR 80 (V) Capacitance Characteristics ｅｍ POWER DISSIPATION 　Ｓ ＣＲ Ｏ 1.0 0.9 ＪＳ ＭＩ CAPACITANCE BETWEEN TERMINALS CT (pF) f=1MHz 0.8 0 5 150 100 50 0 10 REVERSE VOLTAGE (mW) Ta=25℃ 1.1 Power Derating Curve 200 PD 1.2 ｉｃ ｏｎ FORWARD VOLTAGE 0.8 ｄｕ (nA) (mA) Ta=100℃ 15 VR 20 (V) 0 25 50 75 AMBIENT TEMPERATURE ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 100 Ta 125 150 (℃ ) 第２／３页 1N4148WT ｏｎ 'LPHQVLRQV,Q,QFKHV 0LQ 0D[ 0.020 0.031 0.020 0.028 0.010 0.014 0.003 0.006 0.030 0.033 0.043 0.051 0.059 0.067 0.008 REF 0.001 0.003 7° REF 　Ｓ ｅｍ A A1 b c D E E1 E2 L  'LPHQVLRQV,Q0LOOLPHWHUV 0LQ 0D[ 0.510 0.770 0.500 0.700 0.250 0.350 0.080 0.150 0.750 0.850 1.100 1.300 1.500 1.700 0.200 REF 0.010 0.070 7° REF ｉｃ 6\PERO ｄｕ ｃｔ ｏｒ SOD-523 Plastic-Encapsulate Diodes ＪＳ ＭＩ ＣＲ Ｏ SOD-523 Suggested Pad Layout ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第３／３页