C3D02060A
Silicon Carbide Schottky Diode
Z-Rec Rectifier
®
Features
Package
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TO-220-2
600-Volt Schottky Rectifier
Optimized for PFC Boost Diode Application
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
VRRM =
600 V
IF (TC=135˚C) =
4A
Q c
5.8 nC
=
Benefits
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Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
PIN 1
CASE
PIN 2
Applications
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Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
Part Number
Package
Marking
C3D02060A
TO-220-2
C3D02060
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol Parameter
Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
600
V
VRSM
Surge Peak Reverse Voltage
600
V
VDC
DC Blocking Voltage
600
V
8
4
2
A
TC=25˚C
TC=135˚C
TC=161˚C
11
7.5
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
IF
Continuous Forward Current
Note
Fig. 3
IFRM
Repetitive Peak Forward Surge Current
IFSM
Non-Repetitive Peak Forward Surge Current
16.5
15
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
Fig. 8
IFSM
Non-Repetitive Peak Forward Surge Current
120
110
A
TC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse
Fig. 8
Ptot
Power Dissipation
39.5
17
W
TC=25˚C
TC=110˚C
Fig. 4
dV/dt
Diode dV/dt ruggedness
200
V/ns
VR=0-600V
∫i2dt
i2t value
1.35
1.12
A2s
-55 to
+175
˚C
1
8.8
Nm
lbf-in
TJ , Tstg
Operating Junction and Storage Temperature
TO-220 Mounting Torque
1
Value
C3D02060A Rev. E, 10-2016
TC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
M3 Screw
6-32 Screw
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
VF
Forward Voltage
1.5
1.8
1.7
2.4
V
IF = 2 A TJ=25°C
IF = 2 A TJ=175°C
Fig.1
IR
Reverse Current
3
6
15
55
μA
VR = 600 V TJ=25°C
VR = 600 V TJ=175°C
Fig. 2
QC
Total Capacitive Charge
5.8
nC
VR = 400 V, IF = 2A
di/dt = 500 A/μS
TJ = 25°C
Fig. 5
C
Total Capacitance
175
10.5
8.5
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
Fig. 6
EC
Capacitance Stored Energy
0.8
μJ
VR = 400 V
Fig. 7
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
RθJC
Parameter
TO-220 Package Thermal Resistance from Junction to Case
Typ.
Unit
3.8
°C/W
Typical Performance
100
6
TJ = -55 °C
5
Reverse Leakage ICurrent,
(mA) IRR (uA)
4
TJ = 75 °C
TJ = 125 °C
3
2
1
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
FowardVVoltage,
(V) VF (V)
F
Figure 1. Forward Characteristics
2
80
TJ = 175 °C
60
TJ = 125 °C
TJ = 75 °C
R
TJ = 175 °C
F
Foward I
Current,
(A) IF (A)
TJ = 25 °C
C3D02060A Rev. E, 10-2016
3.5
4.0
40
TJ = 25 °C
TJ = -55 °C
20
0
0
200
400
600
800
(V) VR (V)
ReverseVVoltage,
R
Figure 2. Reverse Characteristics
1000
1200
Typical Performance
30
45
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
25
35
30
(W)
PP
Tot(W)
TOT
IF(peak)
(A)
IF (A)
20
40
15
10
25
20
15
10
5
5
0
25
50
75
100
125
150
0
175
25
50
75
˚C
TTC (°C)
200
Conditions:
TJ = 25 °C
Conditions:
TJ = 25 °C
Ftest = 1 MHz
Vtest = 25 mV
180
160
7
140
Capacitance
C (pF) (pF)
6
5
4
C
CapacitiveQCharge,
(nC) QC (nC)
175
Figure 4. Power Derating
3
120
100
80
60
2
40
1
20
0
0
0
100
200
300
400
500
600
700
(V)VR (V)
Reverse V
Voltage,
R
Figure 5. Total Capacitance Charge vs. Reverse Voltage
3
150
C
Figure 3. Current Derating
8
125
˚C
TTC (°C)
C
9
100
C3D02060A Rev. E, 10-2016
0
1
10
100
(V) VR (V)
ReverseVVoltage,
R
Figure 6. Capacitance vs. Reverse Voltage
1000
Typical Performance
1,000
1000
2
1.8
1.4
TJ_initial = 25 °C
TJ_initial = 110 °C
IFSM (A)
1.2
1
100
100
C
Capacitance StoredE Energy,
(mJ) EC (µJ)
1.6
0.8
0.6
0.4
0.2
0
0
100
200
300
400
500
600
700
10
10
10E-6
1E-05 1E-04 1E-03 1E-02
ReverseVVoltage,
(V) VR (V)
100E-6
1E-3
tp (s)
R
Figure 8. Non-Repetitive Peak Forward Surge Current
versus Pulse Duration (sinusoidal waveform)
Figure 7. Capacitance Stored Energy
Thermal Resistance (˚C/W)
0.5
0.3
1
0.1
0.05
0.02
SinglePulse
100E-3
0.01
10E-3
1E-6
10E-6
100E-6
1E-3
T (Sec)
10E-3
Figure 9. Transient Thermal Impedance
4
C3D02060A Rev. E, 10-2016
10E-3
100E-3
1
Package Dimensions
Package TO-220-2
POS
PIN 1
PIN 2
CASE
Inches
Millimeters
Min
Max
Min
Max
A
.381
.410
9.677
10.414
6.477
B
.235
.255
5.969
C
.100
.120
2.540
3.048
D
.223
.337
5.664
8.560
D1
.457-.490
11.60-12.45 typ
D2
.277-.303 typ
7.04-7.70 typ
D3
.244-.252 typ
6.22-6.4 typ
E
.590
.615
14.986
15.621
E1
.302
.326
7.68
8.28
E2
.227
251
5.77
6.37
F
.143
.153
3.632
3.886
G
1.105
1.147
28.067
29.134
H
.500
.550
12.700
13.970
L
.025
.036
.635
.914
M
.045
.055
1.143
1.550
N
.195
.205
4.953
5.207
P
.165
.185
4.191
4.699
Q
.048
.054
1.219
1.372
S
3°
6°
3°
6°
6°
T
3°
6°
3°
U
3°
6°
3°
6°
V
.094
.110
2.388
2.794
W
.014
.025
.356
.635
X
3°
5.5°
3°
5.5°
Y
.385
.410
9.779
10.414
z
.130
.150
3.302
3.810
NOTE:
1. Dimension L, M, W apply for Solder Dip Finish
Recommended Solder Pad Layout
TO-220-2
Part Number
Package
Marking
C3D02060A
TO-220-2
C3D02060A
Note: Recommended soldering profiles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
5
C3D02060A Rev. E, 10-2016
Diode Model
Diode Model CSD10060
Vf
Vf T T==VTV+T+If*R
If*RT T
V
-3 -3)
0.98+(T
* -1.1*10
VTT==0.92
+ (Tj * J-1.35*10
)
-3 -3)
R
0.18+(T
1.8*10
RT =0.052
+ (T *J*0.29*10
)
T=
j
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
VT
RT
Notes
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Wolfpseed representative or from the Product Ecology section of our website at http://
www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
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This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air traffic control systems.
Related Links
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Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
Copyright © 2016 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
6
C3D02060A Rev. E, 10-2016
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power