TST20H200CW C0G

TST20H100CW – TST20H200CW Taiwan Semiconductor 20A, 100V - 200V Trench Schottky Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Patented Trench Schottky technology Excellent high temperature stability Low forward voltage Low power loss/ High efficiency High forward surge capability RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT IF 20 A VRRM 100 - 200 V IFSM 150 A TJ MAX 150 °C Package TO-220AB Configuration Dual dies ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters MECHANICAL DATA ● ● ● ● ● ● ● Case: TO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 1A whisker test Polarity: As marked Weight: 1.88g (approximately) TO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device Repetitive peak reverse voltage VRRM Reverse voltage, total rms value VR(RMS) Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Critical rate of rise of off-state voltage TST20H TST20H TST20H TST20H UNIT 100CW 120CW 150CW 200CW TST20H TST20H TST20H TST20H 100CW 120CW 150CW 200CW 100 120 150 200 V 70 84 105 140 V IF 20 A IFSM 150 A dv/dt 10,000 V/μs Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C 1 Version: F2104 TST20H100CW – TST20H200CW Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 2.8 °C/W Junction-to-case thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT 0.57 - V 0.62 - V 0.72 - V TST20H200CW 0.77 - V TST20H100CW 0.67 0.79 V 0.78 0.89 V 0.81 0.90 V 0.83 0.93 V 0.50 - V 0.53 - V 0.58 - V TST20H200CW 0.62 - V TST20H100CW 0.59 0.68 V 0.63 0.72 V 0.66 0.75 V 0.68 0.78 V - 200 µA - 100 µA - 25 mA - 30 mA - 15 mA TST20H100CW TST20H120CW TST20H150CW TST20H120CW TST20H150CW Forward voltage per (1) diode IF = 10A, TJ = 25°C TST20H200CW VF TST20H100CW TST20H120CW TST20H150CW TST20H120CW TST20H150CW Reverse current @ rated (2) VR per diode IF = 5A, TJ = 25°C IF = 5A, TJ = 125°C IF = 10A, TJ = 125°C TST20H200CW TST20H100CW TST20H120CW TJ = 25°C TST20H150CW TST20H200CW IR TST20H100CW TST20H120CW TJ = 125°C TST20H150CW TST20H200CW Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING TST20HxCW TO-220AB 50 / Tube Notes: 1. “x” defines voltage from 100V(TST20H100CW) to 200V(TST20H200CW) 2 Version: F2104 TST20H100CW – TST20H200CW Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 TST20H100CW 20 CAPACITANCE (pF) 15 10 1000 TST20H120CW 100 TST20H150CW 5 TST20H200CW 0 f=1.0MHz Vsig=50mVp-p 10 50 75 100 125 150 0.1 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 100 10 TJ=150°C 1 TJ=125°C 0.1 TJ=100°C 0.01 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 90 100 100 10 10 1 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) TJ=150°C 1 TJ=125°C TJ=100°C 0.01 TJ=25°C 0.0001 20 30 40 50 60 70 80 90 TJ=25°C TJ=100°C 1 TJ=25°C 0.01 Pulse width 300μs 1% duty cycle Pulse width 0.1 0.001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.1 1.2 Fig.6 Typical Forward Characteristics TST20H120CW 10 TJ=150°C FORWARD VOLTAGE (V) 100 0.001 UF1DLW 0.1 Fig.5 Typical Reverse Characteristics 0.1 TST20H100CW TJ=125°C TJ=125°C PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics TST20H100CW 10 (A) 25 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 100 10 TST20H120CW 10 1 UF1DLW TJ=150°C TJ=125°C TJ=125°C 0.1 1 0.01 TJ=25°C (A) AVERAGE FORWARD CURRENT (A) 25 TJ=100°C TJ=25°C Pulse width 300μs 1% duty cycle Pulse width 0.1 0.001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 FORWARD VOLTAGE (V) 3 Version: F2104 TST20H100CW – TST20H200CW Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.8 Typical Forward Characteristics TJ=150°C 1 TJ=125°C 0.1 TJ=100°C 0.01 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 90 100 100 10 TST20H150CW 10 1 0.1 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) TJ=150°C 0.1 TJ=100°C 0.001 0.0001 TJ=25°C 0.00001 20 30 40 50 60 70 80 TJ=25°C Pulse width 300μs 1% duty cycle Pulse width 0.1 0.001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0.1 0.001 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 Fig.10 Typical Forward Characteristics TJ=125°C 10 TJ=25°C TJ=100°C FORWARD VOLTAGE (V) 10 0.01 TJ=125°C TJ=125°C 0.01 Fig.9 Typical Reverse Characteristics 1 TJ=150°C 1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) TST20H200CW UF1DLW 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 100 10 TST20H200CW 10 1 0.1 UF1DLW TJ=150°C TJ=125°C TJ=125°C TJ=100°C TJ=25°C 1 0.01 TJ=25°C Pulse width 300μs 1% duty cycle Pulse width FORWARD VOLTAGE (V) 4 (A) TST20H150CW (A) 10 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.7 Typical Reverse Characteristics Version: F2104 TST20H100CW – TST20H200CW Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS TO-220AB MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: F2104 TST20H100CW – TST20H200CW Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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