ES3DF

山东晶导微电子股份有限公司 ES3AF THRU ES3JF Jingdao Microelectronics co.LTD Surface Mount Superfast Recovery Rectifier Reverse Voltage – 50 to 600 V PINNING Forward Current – 3 A PIN FEATURES • For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Superfast reverse recovery time • Lead free in comply with EU RoHS 2011/65/EU directives DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: ES3AF~ES3JF: ES3A~ES3J Simplified outline SMAF and symbol MECHANICAL DATA • Case: SMAF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 27mg / 0.00095oz Absolute Maximum Ratings and Characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbols ES3AF ES3BF ES3CF ES3DF ES3EF ES3GF ES3JF Units Maximum Repetitive Peak Reverse Voltage V RRM 50 100 150 200 300 400 600 V Maximum RMS voltage V RMS 35 70 105 140 210 280 420 V Maximum DC Blocking Voltage V DC 50 100 150 200 300 400 600 V Maximum Average Forward Rectified Current at T c = 125 °C I F(AV) 3 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load I FSM 80 A Maximum Forward Voltage at 3 A VF Parameter Maximum DC Reverse Current T a = 25 °C at Rated DC Blocking Voltage T a =125 °C Typical Junction Capacitance at V R =4V, f=1MHz Maximum Reverse Recovery Time （1） Typical Thermal Resistance （2） Operating and Storage Temperature Range 1.25 1 1.68 V IR 5 100 μA Cj 40 pF t rr 35 ns RθJA RθJC 50 16 °C/W T j , T stg -55 ~ +150 °C （1）Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A . （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2016.12 SMAF-E-ES3AF~ES3JF-3A600V Page 1 of 3 山东晶导微电子股份有限公司 ES3AF THRU ES3JF Jingdao Microelectronics co.LTD Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 ohm Noninductive t rr 10 ohm Noninductive +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm NonInductive OSCILLOSCOPE Note 1 -1.0 Note：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 4.0 300 3.5 100 I R - Reverse Current ( μ A) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 3.0 2.5 2.0 1.5 1.0 0.5 Single phase half-wave 60 Hz resistive or inductive load T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 50 75 100 125 150 175 20 0 40 Case Temperature (°C) Junction Capacitance ( pF) Instaneous Forward Current (A) T J =25°C 1.0 ES3AF~ES3DF ES3EF/WS3GF 0.1 80 100 Fig.5 Typical Junction Capacitance Fig.4 Typical Forward Characteristics 10 60 % of PIV.VOLTS ES3JF 0.01 T J =25°C 100 10 T J=25°C f = 1.0MHz V sig = 50mV p-p 1 0.001 0 0.5 1.0 1.5 2.0 2.5 Instaneous Forward Voltage (V) 0.1 1.0 10 100 Reverse Voltage (V) Peak Forward Surage Current (A) Fig.6 Maximum Non-Repetitive Peak Forward Surage Current 120 100 80 60 40 20 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles 2016.12 www.sdjingdao.com Page 2 of 3 山东晶导微电子股份有限公司 ES3AF THRU ES3JF Jingdao Microelectronics co.LTD PACKAGE OUTLINE Plastic surface mounted package; 2 leads SMAF ∠ALL ROUND C A ∠ALL ROUND HE g Top View mil Bottom View A C D E e g HE max 1.2 0.20 3.7 2.7 1.6 1.2 4.9 min 0.9 0.12 3.3 2.4 1.3 0.8 4.4 max 47 7.9 146 106 63 47 193 min 35 4.7 130 94 51 31 173 UNIT mm g pad e E A pad D E A V M 7° The recommended mounting pad size Marking Type number 2.2 (86) 1.6 (63) 1.8 (71) 1.6 (63) mm Unit ： (mil) 2016.12 ∠ JD612058B0 Marking code ES3AF ES3A ES3BF ES3B ES3CF ES3C ES3DF ES3D ES3EF ES3E ES3GF ES3G ES3JF ES3J Page 3 of 3