SS8050 Y1

SOT-89Plastic-Encapsulate Transistors SS8050 TRANSISTOR (NPN) FEATURES  Compliment to SS8550 MARKING: Y1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power dissipation 0.5 W RΘJA Thermal Resistance From Junction To Ambient 250 ℃/W TJ Storage Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 μA Emitter cut-off current ICEO VCE=20V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA hFE(1) VCE=1V, IC=100mA 120 hFE(2) VCE=1V, IC=800mA 40 Collector-emitter saturation voltage VCE(sat) IC=800mA, IB=80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=800mA, IB=80mA 1.2 V 1 V 1.55 V DC current gain Base-emitter voltage VBE VCE=1V, IC=10mA Base-emitter positive favor voltage VBEF IB=1A fT Transition frequency Cob output capacitance VCE=10V,IC=50mA,f=30MHz 400 100 VCB=10V,IE=0,f=1MHz MHz 15 CLASSIFICATION OF hFE(1) Rank Range C D D1 120-200 160-300 1 200-350 D2 300-400 pF Static Characteristic 0.30 h DC CURRENT GAIN 0.8mA 0.20 0.7mA 0.6mA 0.15 0.5mA 0.4mA 0.10 IC —— Ta=100℃ FE 0.9mA IC(A) COLLECTOR CURRENT COMMON EMITTER Ta=25℃ 1mA 0.25 hFE 1000 300 Ta =25℃ 100 0.3mA 0.2mA 0.05 COMMON EMITTER VCE = 1V IB=0.1mA 0.00 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCEsat —— 10 7 1 10 100 1000 1500 COLLECTOR CURRENT I (mA) C IC VBEsat —— 1200 IC BASE-EMITTER SATURATION VOLTAGE V (mV) 1000 Ta=100 ℃ Ta=25℃ 10 1 800 Ta=25℃ BEsat 100 CEsat COLLECTOR-EMITTER SATURATION VOLTAGE V (mV) 1000 6 V CE (V) 600 Ta=100 ℃ 400 β=10 1 10 100 β=10 1000 1500 1 10 I C —— VBE Cob/C ib 100 —— VCB/VEB f=1MHz IE=0/I C=0 1000 Ta=25 ℃ (pF) (mA) Cib IC 100 CAPACITANCE C COLLECTOR CURRENT 1000 1500 COLLECTOR CURREMT I (mA) C COLLECTOR CURREMT I (mA) C 1500 100 10 Cob 10 COMMON EMITTER VCE = 1V 0 —— 900 1 0.1 1200 IC 1 REVERSE VOLTAGE PC 0.6 100 C fT(MHz) 600 fT 1000 TRANSITION FREQUENCY 300 BESE-EMMITER VOLTAGE V (mV) BE COLLECTOR POWER DISSIPATION P (W) 1 10 COMMON EMITTER VCE =10V —— T V (V) 10 20 a 0.5 0.4 0.3 0.2 0.1 Ta=25℃ 1 2 10 COLLECTOR CURRENT IC (mA) 0.0 100 2 0 25 50 75 100 AMBIENT TEMPERATURE T (℃) a 125 150 SS8050 SOT-89 PACKAGE OUTLINE 3