APT1003RKLLG

APT1003RKLL 1000V 4A 3.00Ω POWER MOS 7 R MOSFET TO-220 ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID D S D • Increased Power Dissipation • Easier To Drive • TO-220 Package MAXIMUM RATINGS Symbol G G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT1003RKLL UNIT 1000 Volts Drain-Source Voltage 4 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 139 Watts Linear Derating Factor 1.11 W/°C PD TJ,TSTG 16 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS 1 -55 to 150 Amps 4 1 Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts 10 4 mJ 425 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 1000 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, 2A) TYP MAX Volts 3.00 Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 1-2004 Characteristic / Test Conditions 050-7118 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol APT1003RKLL Test Conditions Characteristic MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 135 Reverse Transfer Capacitance f = 1 MHz 25 VGS = 10V 34 VDD = 500V 5 Crss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr ID = 4A @ 25°C td(off) tf 4 VDD = 500V ID = 4A @ 25°C Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 10 INDUCTIVE SWITCHING @ 25°C 6 13 VDD = 667V, VGS = 15V Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ID = 4A, RG = 5Ω 42 INDUCTIVE SWITCHING @ 125°C 6 ns 25 RG = 1.6Ω Fall Time nC 8 VGS = 15V Turn-off Delay Time pF 22 RESISTIVE SWITCHING Rise Time UNIT 694 VGS = 0V 3 MAX µJ 40 VDD = 667V, VGS = 15V ID = 4A, RG = 5Ω 48 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP MAX 4 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -ID4A, dl S /dt = 100A/µs) 560 ns Q Reverse Recovery Charge (IS = -ID4A, dl S/dt = 100A/µs) 3.2 µC rr dv/ dt Peak Diode Recovery dv/ 16 (Body Diode) 1.3 (VGS = 0V, IS = -ID4A) dt 5 Amps Volts 10 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP 0.90 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 53.13mH, RG = 25Ω, Peak IL = 4A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID4A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.7 0.60 0.5 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7118 Rev A 1-2004 1.0 0.80 0.40 0.3 t1 t2 SINGLE PULSE 0.20 0.1 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.05 0 10-5 10-4 °C/W 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT1003RKLL 10 RC MODEL Junction temp. (°C) 0.386 0.00336F Power (watts) 0.508 0.0903F ID, DRAIN CURRENT (AMPERES) VGS =15 & 10V 7.5V 7V 8 6.5V 6 6V 4 5.5V 2 5V Case temperature. (°C) 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 12 TJ = -55°C 10 8 6 TJ = +25°C 4 2 TJ = +125°C 0 0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 3.5 3 2.5 2 1.5 1 0.5 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE GS 1.30 VGS=10V 1.20 1.10 VGS=20V 1.00 0.90 0.80 0 1 2 3 4 5 6 7 8 9 10 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 2.5 I D V GS 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 = 2A = 10V 2.0 1.5 1.0 0.5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) NORMALIZED TO V = 10V @ 2A 1.15 4 0.0 -50 1.40 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 1-2004 14 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @