APT1003RBFLL APT1003RSFLL
1000V 4A 3.00Ω
POWER MOS 7
®
R
FREDFET
TO-247
D3PAK
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package • FAST RECOVERY BODY DIODE
D G S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT1003RBFLL_SFLL UNIT Volts Amps
1000 4 16 ±30 ±40 139 1.11 -55 to 150 300 4 10
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
425
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
1000 3.00 250 1000 ±100 3 5
(VGS = 10V, 2A)
Ohms µA nA Volts
1-2004 050-7110 Rev A
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT1003RBFLL_SFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 500V ID = 4A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 4A @ 25°C 6 RG = 1.6Ω INDUCTIVE SWITCHING @ 25°C VDD = 667V, VGS = 15V ID = 4A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 667V, VGS = 15V ID = 4A, RG = 5Ω
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
694 135 25 34 5 22 8 4 25 10 13 42 40 48
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
nC
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns
4 16 1.3 18
Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN
(Body Diode) (VGS = 0V, IS = -4A)
5
d v/
t rr
Reverse Recovery Time (IS = -4A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -4A, di/dt = 100A/µs) Peak Recovery Current (IS = -4A, di/dt = 100A/µs) Characteristic Junction to Case Junction to Ambient
250 515 0.50 1.1 8.3 11.5
TYP MAX
Q rr IRRM
µC
Amps
THERMAL CHARACTERISTICS
Symbol RθJC RθJA UNIT °C/W
0.90 40
4 Starting Tj = +25°C, L = 53.13mH, RG = 25Ω, Peak IL = 4A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID4A di/dt ≤ 700A/µs VR ≤ VDSSV TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20.
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
1.0
Z JC, THERMAL IMPEDANCE (°C/W) θ
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.80
0.9
0.7 0.60 0.5 0.40 0.3 0.20 0.1 0.05 0 10-5 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 1.0 SINGLE PULSE Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC
050-7110 Rev A
1-2004
Typical Performance Curves
10
ID, DRAIN CURRENT (AMPERES)
APT1003RBFLL_SFLL
VGS =15 & 10V 7.5V 8 6.5V 6 6V 4 5.5V 2 5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
7V
RC MODEL Junction temp. (°C) 0.386 Power (watts) 0.508 Case temperature. (°C) 0.0903F 0.00336F
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 16 14 12 10 8 6 4 2 TJ = +125°C 0 0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS TJ = +25°C
VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @
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