APT1003RSFLLG/TR

APT1003RBFLL APT1003RSFLL 1000V 4A 3.00Ω POWER MOS 7 R FREDFET D3PAK TO-247 ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol VDSS ID D G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT1003RBFLL_SFLL UNIT 1000 Volts Drain-Source Voltage 4 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 139 Watts Linear Derating Factor 1.11 W/°C PD TJ,TSTG 16 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS 1 -55 to 150 Amps 4 1 Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts 10 4 mJ 425 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 1000 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, 2A) TYP MAX UNIT Volts 3.00 Ohms Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 1mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA 1-2004 Characteristic / Test Conditions 050-7110 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol APT1003RBFLL_SFLL Test Conditions Characteristic Ciss Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V C rss Reverse Transfer Capacitance f = 1 MHz Qg Total Gate Charge Qgs Gate-Source Charge 3 Gate-Drain ("Miller ") Charge Turn-on Delay Time RESISTIVE SWITCHING VGS = 15V VDD = 500V Turn-off Delay Time tf ID = 4A @ 25°C Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ns 13 VDD = 667V, VGS = 15V 42 ID = 4A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C 6 nC 10 RG = 1.6Ω INDUCTIVE SWITCHING @ 25°C 6 UNIT pF 25 34 5 22 8 4 25 ID = 4A @ 25°C Rise Time MAX 694 135 VDD = 500V td(on) td(off) TYP VGS = 10V Qgd tr MIN µJ 40 VDD = 667V, VGS = 15V ID = 4A, RG = 5Ω 48 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) 16 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -4A) 1.3 Volts 18 V/ns dv/ Peak Diode Recovery dt dv/ dt 4 5 Reverse Recovery Time (IS = -4A, di/dt = 100A/µs) Tj = 25°C 250 Tj = 125°C 515 Q rr Reverse Recovery Charge (IS = -4A, di/dt = 100A/µs) Tj = 25°C 0.50 Tj = 125°C 1.1 IRRM Peak Recovery Current (IS = -4A, di/dt = 100A/µs) Tj = 25°C 8.3 Tj = 125°C 11.5 t rr Amps ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.90 RθJC Junction to Case RθJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.9 0.7 0.60 0.5 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7110 Rev A 1-2004 1.0 0.40 0.3 t1 t2 SINGLE PULSE 0.20 0.1 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.05 0 10-5 10-4 °C/W 4 Starting Tj = +25°C, L = 53.13mH, RG = 25Ω, Peak IL = 4A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID4A di/dt ≤ 700A/µs VR ≤ VDSSV TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.80 UNIT 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT1003RBFLL_SFLL 10 RC MODEL Junction temp. (°C) 0.386 0.00336F Power (watts) 0.508 0.0903F ID, DRAIN CURRENT (AMPERES) VGS =15 & 10V 7.5V 7V 8 6.5V 6 6V 4 5.5V 2 5V Case temperature. (°C) 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 12 TJ = -55°C 10 8 6 TJ = +25°C 4 2 TJ = +125°C 0 0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 3.5 3 2.5 2 1.5 1 0.5 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE GS 1.30 VGS=10V 1.20 1.10 VGS=20V 1.00 0.90 0.80 0 1 2 3 4 5 6 7 8 9 10 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 2.5 I V D GS 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 = 2A = 10V 2.0 1.5 1.0 0.5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) NORMALIZED TO V = 10V @ 2A 1.15 4 0.0 -50 1.40 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 1-2004 14 VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @