APT1003RKLL

APT1003RKLL 1000V 4A 3.00Ω POWER MOS 7 ® R MOSFET TO-220 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 G D S • Increased Power Dissipation • Easier To Drive • TO-220 Package D G S All Ratings: TC = 25°C unless otherwise specified. APT1003RKLL UNIT Volts Amps 1000 4 16 ±30 ±40 139 1.11 -55 to 150 300 4 10 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 425 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 1000 3.00 100 500 ±100 3 5 (VGS = 10V, 2A) Ohms µA nA Volts 1-2004 050-7118 Rev A Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT1003RKLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 500V ID = 4A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 4A @ 25°C RG = 1.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 667V, VGS = 15V ID = 4A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 667V, VGS = 15V ID = 4A, RG = 5Ω MIN TYP MAX UNIT 694 135 25 34 5 22 8 4 25 10 13 42 40 48 µJ ns nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr rr dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 MIN TYP MAX UNIT Amps Volts ns µC 4 16 1.3 560 3.2 10 (Body Diode) (VGS = 0V, IS = - ID4A) Reverse Recovery Time (IS = -ID4A, dl S /dt = 100A/µs) Reverse Recovery Charge (IS = -ID4A, dl S/dt = 100A/µs) Peak Diode Recovery d v/ dt 5 Q V/ns THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 0.90 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 53.13mH, RG = 25Ω, Peak IL = 4A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID4A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 1.0 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.80 0.9 0.7 0.60 0.5 0.40 0.3 0.20 0.1 0.05 0 10-5 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 1.0 SINGLE PULSE Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 050-7118 Rev A 1-2004 Typical Performance Curves 10 VGS =15 & 10V ID, DRAIN CURRENT (AMPERES) APT1003RKLL 7.5V 7V 6.5V 8 RC MODEL Junction temp. (°C) 0.386 Power (watts) 0.508 Case temperature. (°C) 0.0903F 0.00336F 6 6V 4 5.5V 2 5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 0 FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 16 ID, DRAIN CURRENT (AMPERES) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @