ADRF5130BCPZ

High Power, 44 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 3.8 GHz ADRF5130 Data Sheet FUNCTIONAL BLOCK DIAGRAM Reflective, 50 Ω design Low insertion loss 0.6 dB typical to 2.0 GHz 0.7 dB typical to 3.5 GHz High isolation 50 dB typical to 2.0 GHz 46 dB typical to 3.5 GHz High power handling RF input power, continuous wave (CW) at TCASE = 85°C 43 dBm maximum operating 46.5 dBm absolute maximum rating High linearity 0.1 dB compression (P0.1dB): 46 dBm typical Input third-order intercept (IP3) 68 dBm typical to 2 GHz 65 dBm typical to 3.5 GHz ESD ratings Human body model (HBM): 2 kV, Class 2 Charged device model (CDM): 1.25 kV Single positive supply: VDD = 5 V Positive control, TTL-compatible: VCTL = 0 V or VDD 24-lead, 4 mm × 4 mm LFCSP package (16 mm2) VCTL ADRF5130 RF1 RF2 RFC 14081-001 FEATURES Figure 1. APPLICATIONS Cellular/4G infrastructure Wireless infrastructure Military and high reliability applications Test equipment Pin diode replacement GENERAL DESCRIPTION The ADRF5130 is a high power, reflective, 0.7 GHz to 3.8 GHz, silicon, single-pole, double-throw (SPDT) switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, like long-term evolution (LTE) base stations. The ADRF5130 has high power handling of 43 dBm (maximum) and 0.1 dB compression (P0.1dB) of 46 dBm, with a low insertion loss of 0.6 dB at 2 GHz and 0.7 dB at 3.5 GHz. On-chip circuitry operates at a single, positive supply voltage of 5 V and typical supply current of 1.06 mA, making the ADRF5130 an ideal alternative to pin diode-based switches. The device comes in a RoHS compliant, compact, 24-lead, 4 mm × 4 mm LFCSP package. Rev. C Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 ©2016–2020 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com ADRF5130 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Interface Schematics .....................................................................5 Applications ...................................................................................... 1 Typical Performance Characteristics .............................................6 Functional Block Diagram .............................................................. 1 Insertion Loss, Isolation, Return Loss, and IP3 ........................6 General Description ......................................................................... 1 Theory of Operation .........................................................................7 Revision History ............................................................................... 2 Applications Information ................................................................8 Specifications .................................................................................... 3 Evaluation Board ...........................................................................8 Absolute Maximum Ratings ........................................................... 4 Outline Dimensions ....................................................................... 10 ESD Caution.................................................................................. 4 Ordering Guide .......................................................................... 10 Pin Configuration and Function Descriptions ............................ 5 REVISION HISTORY 6/2020—Rev. B to Rev. C Changed Operating Frequency from 0.7 GHz to 3.5 GHz to 0.7 GHz to 3.8 GHz ....................................................... Throughout Changes to Data Sheet Title, Features Section, and General Description Section .......................................................................... 1 Changes to Table 1 ........................................................................... 3 5/2018—Rev. A to Rev. B Change to RFC to RF2 Column, Table 5 .......................................7 Updated Outline Dimensions ...................................................... 10 1/2017—Rev. 0 to Rev. A Changes to Ordering Guide .......................................................... 10 7/2016—Revision 0: Initial Version Rev. C | Page 2 of 10 Data Sheet ADRF5130 SPECIFICATIONS VDD = 5 V, VCTL = 0 V or VDD, TA = 25°C, 50 Ω system, unless otherwise noted. Table 1. Parameter FREQUENCY RANGE INSERTION LOSS Symbol ISOLATION RFC to RF1 or RF2 (Worst Case) RF1 to RF2 (Worst Case) RETURN LOSS RFC RFC to RF1 or RF2 SWITCHING SPEED Time Rise and Fall On and Off RADIO FREQUENCY (RF) SETTLING TIME INPUT POWER 0.1 dB Compression INPUT THIRD-ORDER INTERCEPT tRISE, tFALL tON, tOFF P0.1dB IP3 RECOMMENDED OPERATING CONDITIONS Voltage Range Bias Control Maximum RF Input Power TCASE = 105°C TCASE = 85°C VDD VCTL TCASE = 25°C Case Temperature Range DIGITAL INPUT CONTROL VOLTAGE TCASE Low Range High Range SUPPLY CURRENT VIL VIH IDD Test Conditions/Comments Min 0.7 0.7 GHz to 2.0 GHz 2.0 GHz to 3.5 GHz 3.5 GHz to 3.8 GHz 0.6 0.7 0.75 Unit GHz dB dB dB 0.7 GHz to 2.0 GHz 2.0 GHz to 3.8 GHz 0.7 GHz to 2.0 GHz 2.0 GHz to 3.8 GHz 50 46 51 40 dB dB dB dB 0.7 GHz to 2.0 GHz 2.0 GHz to 3.5GHz 3.5 GHz to 3.8 GHz 0.7 GHz to 2.0 GHz 2.0 GHz to 3.5 GHz 3.5 GHz to 3.8 GHz 23 17 15 21 17 16 dB dB dB dB dB dB 90% to 10% of RF output 50% VCTL to 10% to 90% of RF output 50% VCTL to 0.1 dB margin of final RF output 155 750 1.8 ns ns µs 46 dBm 68 65 dBm dBm Two-tone input power = 25 dBm/tone 0.7 GHz to 2 GHz 2 GHz to 3.8 GHz Typ Max 3.8 4.5 0 5.4 VDD V V −40 41 43 38 44 44.5 +105 dBm dBm dBm dBm dBm °C 0 1.3 0.8 5.0 V V mA Continuous wave Continuous wave 8 dB peak to average ratio (PAR) LTE, average 8 dB PAR LTE, single event (