ADRF5160BCPZ

FEATURES FUNCTIONAL BLOCK DIAGRAM VDD Reflective, 50 Ω design Low insertion loss: 0.7 dB typical to 2.0 GHz High power handling at TCASE = 105°C Long-term (>10 years) average CW power: 43 dBm Peak power: 49 dBm LTE average power (8 dB PAR): 41 dBm Single event (10 years) average typical), a low insertion loss of 0.7 dB typical Rev. 0 to 2.0 GHz, an input third-order intercept (IP3) of 70 dBm (typical), and a 0.1 dB compression point (P0.1dB) of 47 dBm. On-chip circuitry operates at a single positive supply voltage of 5 V at a typical supply current of 1.1 mA, making the ADRF5160 an ideal alternative to pin diode-based switches. The ADRF5160 comes in an RoHS compliant, compact, 32-lead, 5 mm × 5 mm LFCSP. Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 ©2018 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com ADRF5160 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Interface Schematics .....................................................................5 Applications ....................................................................................... 1 Typical Performance Characteristics ..............................................6 Functional Block Diagram .............................................................. 1 Theory of Operation .........................................................................8 General Description ......................................................................... 1 Applications Information .................................................................9 Revision History ............................................................................... 2 Evaluation Board ...........................................................................9 Specifications..................................................................................... 3 Typical Application Circuit ....................................................... 10 Absolute Maximum Ratings ............................................................ 4 Outline Dimensions ....................................................................... 12 Thermal Resistance ...................................................................... 4 Ordering Guide .......................................................................... 12 ESD Caution .................................................................................. 4 Pin Configuration and Function Descriptions ............................. 5 REVISION HISTORY 5/2018—Revision 0: Initial Version Rev. 0 | Page 2 of 12 Data Sheet ADRF5160 SPECIFICATIONS VDD = 5 V, VCTL = 0 V/VDD, TA = 25°C, and the device is a 50 Ω system, unless otherwise noted. Table 1. Parameter FREQUENCY RANGE INSERTION LOSS ISOLATION RFC to RF1 and RF2 (Worst Case) RF1 to RF2 RETURN LOSS RFC RF1 and RF2 (On State) SWITCHING CHARACTERISTICS Rise and Fall Time (tRISE, tFALL) On and Off Time (tON, tOFF) INPUT LINEARITY 0.1 dB Compression (P0.1dB) Third-Order Intercept (IP3) SUPPLY CURRENT DIGITAL CONTROL INPUT Low Voltage High Voltage Low and High Current RECOMMENDED OPERATING CONDITIONS Supply Voltage Range (VDD) Control Voltage Range (VCTL) RF Input Power Case Temperature (TCASE) = 105°C 2 TCASE = 85°C TCASE = 25°C TCASE = −40°C Test Conditions/Comments 2 Typ Max 4.0 Unit GHz dB dB dB 0.7 GHz to 2.0 GHz 2.0 GHz to 3.5 GHz 3.5 GHz to 4.0 GHz 0.7 0.8 0.9 0.7 GHz to 2.0 GHz 2.0 GHz to 4.0 GHz 0.7 GHz to 2.0 GHz 2.0 GHz to 4.0 GHz 53 45 51 35 dB dB dB dB 0.7 GHz to 2.0 GHz 2.0 GHz to 4.0 GHz 0.7 GHz to 2.0 GHz 2.0 GHz to 4.0 GHz 20 19 19 18 dB dB dB dB 10%/90% radio frequency output (RFOUT) 50% VCTL to 10%/90% RFOUT 0.27 1.2 µs µs 47 dBm 72 70 1.1 dBm dBm mA Two-tone input power = 30 dBm per tone at 1 MHz tone spacing 0.7 GHz to 2.0 GHz 2.0 GHz to 4.0 GHz 1.0 1 VDD = 4.5 V to 5.4 V, TCASE = −40°C to +105°C 0 1.3 0.8 5 V V µA 4.5 0 5.4 VDD V V −40 43 41 44 45 41 44 47.5 41 44 49 41 44 +105 dBm dBm dBm dBm dBm dBm dBm dBm dBm dBm dBm dBm °C 10 years) average 8 dB PAR LTE, single event (10 years) average 8 dB PAR LTE, single event (10 years) average 8 dB PAR LTE, single event (10 years) average 8 dB PAR LTE, single event (