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SN74AHC1G04
SCLS318T – MARCH 1996 – REVISED JANUARY 2016
SN74AHC1G04 Single Inverter Gate
1 Features
3 Description
•
•
•
•
•
The SN74AHC1G04 contains one inverter gate. The
device performs the Boolean function Y = A.
1
•
Operating Range 2 V to 5.5 V
Max tpd of 6.5 ns at 5 V
Low Power Consumption, 10-μA Max ICC
±8-mA Output Drive at 5 V
Schmitt-Trigger Action at All Inputs Makes the
Circuit Tolerant for Slower Input Rise and Fall
Time
Latch-Up Performance Exceeds 250 mA Per
JESD 17
Device Information(1)
PART NUMBER
SN74AHC1G04
PACKAGE
BODY SIZE (NOM)
SOT-23 (5)
2.90 x 1.60 mm
SC-70 (5)
2.00 x 1.30 mm
SOT-553 (5)
1.65 x 1.20 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
2 Applications
•
•
•
•
Cameras
E-Meters
Ethernet Switches
Infotainment
Simplified Schematic
A
Y
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
SN74AHC1G04
SCLS318T – MARCH 1996 – REVISED JANUARY 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
4
4
4
5
5
5
5
6
6
Absolute Maximum Ratings .....................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Switching Characteristics, VCC = 3.3 V ± 0.3 V ........
Switching Characteristics, VCC = 5 V ± 0.5 V ...........
Operating Characteristics..........................................
Typical Characteristics ..............................................
Parameter Measurement Information .................. 7
Detailed Description .............................................. 8
8.1
8.2
8.3
8.4
9
Overview ...................................................................
Functional Block Diagram .........................................
Feature Description...................................................
Device Functional Modes..........................................
8
8
8
8
Application and Implementation .......................... 9
9.1 Application Information.............................................. 9
9.2 Typical Application ................................................... 9
10 Power Supply Recommendations ..................... 10
11 Layout................................................................... 11
11.1 Layout Guidelines ................................................. 11
11.2 Layout Example .................................................... 11
12 Device and Documentation Support ................. 11
12.1 Trademarks ........................................................... 11
12.2 Electrostatic Discharge Caution ............................ 11
12.3 Glossary ................................................................ 11
13 Mechanical, Packaging, and Orderable
Information ........................................................... 11
4 Revision History
Changes from Revision S (December 2014) to Revision T
Page
•
Removed "Schmitt-Trigger" from the data sheet title ............................................................................................................ 1
•
Added TJ Junction temperature to the Absolute Maximum Ratings ...................................................................................... 4
Changes from Revision R (January 2013) to Revision S
Page
•
Added Applications, Device Information table, Pin Functions table, ESD Ratings table, Thermal Information table,
Typical Characteristics, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section. ................................................................................................. 1
•
Deleted Ordering Information table. ....................................................................................................................................... 1
•
Changed MAX operating temperature to 125°C in Recommended Operating Conditions table. ......................................... 4
Changes from Revision Q (June 2005) to Revision R
•
2
Page
Changed document format from Quicksilver to DocZone. ..................................................................................................... 1
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SCLS318T – MARCH 1996 – REVISED JANUARY 2016
5 Pin Configuration and Functions
DCK PACKAGE
(TOP VIEW)
DBV PACKAGE
(TOP VIEW)
NC
1
A
2
GND
3
NC
1
A
2
GND
3
5
VCC
5
4
DRL PACKAGE
(TOP VIEW)
VCC
NC
1
A
2
GND
3
5
VCC
4
Y
Y
Y
4
NC – No internal connection
See mechanical drawings for dimensions.
Pin Functions
PIN
NO.
NAME
TYPE
DESCRIPTION
1
NC
—
2
A
I
No Connection
3
GND
—
Ground Pin
Input A
4
Y
O
Output Y
5
VCC
—
Power Pin
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SCLS318T – MARCH 1996 – REVISED JANUARY 2016
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
VCC
MIN
MAX
Supply voltage range
–0.5
7
UNIT
V
(2)
–0.5
7
V
–0.5
VCC + 0.5
VI
Input voltage range
VO
Output voltage range (2)
IIK
Input clamp current
VI < 0
–20
mA
IOK
Output clamp current
VO < 0 or VO > VCC
±20
mA
IO
Continuous output current
VO = 0 to VCC
±25
mA
±50
mA
150
°C
150
°C
Continuous current through each VCC or GND
Tstg
Storage temperature range
TJ
Junction temperature
(1)
(2)
–65
V
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1)
3500
Charged device model (CDM), per JEDEC specification JESD22-C101,
all pins (2)
1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted) (1)
VCC
Supply voltage
VCC = 2 V
VIH
High-level input voltage
VCC = 3 V
VCC = 5.5 V
MIN
MAX
2
5.5
Low-level input voltage
V
1.5
2.1
V
3.85
VCC = 2 V
VIL
UNIT
0.5
VCC = 3 V
0.9
VCC = 5.5 V
V
1.65
VIH
Input voltage
0
5.5
V
VO
Output voltage
0
VCC
V
–50
µA
IOH
High-level output current
VCC = 2 V
IOL
Low-level output current
Δt/Δv
Input transition rise or fall rate
TA
Operating free-air temperature
(1)
4
VCC = 3.3 V ± 0.3 V
–4
VCC = 5 V ± 0.5 V
–8
VCC = 2 V
50
VCC = 3.3 V ± 0.3 V
4
VCC = 5 V ± 0.5 V
8
VCC = 3.3 V ± 0.3 V
100
VCC = 5 V ± 0.5 V
20
–40
125
mA
µA
mA
ns/V
°C
All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs (SCBA004).
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6.4 Thermal Information
SN74AHC1G04
THERMAL METRIC (1)
DBV
DCK
DRL
UNIT
5 PINS
RθJA
Junction-to-ambient thermal resistance
231.3
287.6
328.7
RθJC(top)
Junction-to-case (top) thermal resistance
119.9
97.7
105.1
RθJB
Junction-to-board thermal resistance
60.6
65.0
150.3
ψJT
Junction-to-top characterization parameter
17.8
2.0
6.9
ψJB
Junction-to-board characterization parameter
60.1
64.2
148.4
(1)
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report (SPRA953).
6.5 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VCC
IOH = –50 µA
VOH
TA = 25°C
–40°C to 85°C
MAX
MIN
MAX
–40°C to 125°C
MIN
TYP
MIN
2V
1.9
2
1.9
1.9
3V
2.9
3
2.9
2.9
4.5
4.5 V
4.4
4.4
4.4
IOH = –4 mA
3V
2.58
2.48
2.48
IOH = –8 mA
4.5 V
3.94
3.8
3.8
UNIT
MAX
V
2V
0.1
0.1
0.1
3V
0.1
0.1
0.1
4.5 V
0.1
0.1
0.1
3V
0.36
0.44
0.44
IOL = 8 mA
4.5 V
0.36
0.44
0.44
VI = 5.5 V or GND
0 V to
5.5 V
±0.1
±1
±1
µA
ICC
VI = VCC or GND, IO = 0
5.5 V
1
10
10
µA
Ci
VI = VCC or GND
10
10
10
pF
IOH = 50 µA
VOL
IOL = 4 mA
II
5V
2
V
6.6 Switching Characteristics, VCC = 3.3 V ± 0.3 V
over recommended operating free-air temperature range (unless otherwise noted) (see Figure 3)
PARAMETER
tPLH
tPHL
tPLH
tPHL
FROM
(INPUT)
TO
(OUTPUT)
OUTPUT
CAPACITANCE
A
Y
CL = 15 pF
A
Y
CL = 50 pF
TA = 25°C
MIN
–40°C to 85°C
–40°C to 125°C
TYP
MAX
MIN
MAX
MIN
MAX
5
7.1
1
8.5
1
9.5
5
7.1
1
8.5
1
9.5
7.5
10.6
1
12
1
13
7.5
10.6
1
12
1
13
UNIT
ns
ns
6.7 Switching Characteristics, VCC = 5 V ± 0.5 V
over recommended operating free-air temperature range (unless otherwise noted) (see Figure 3)
PARAMETER
tPLH
tPHL
tPLH
tPHL
FROM
(INPUT)
TO
(OUTPUT)
OUTPUT
CAPACITANCE
A
Y
CL = 15 pF
A
Y
CL = 50 pF
TA = 25°C
MIN
–40°C to 85°C
–40°C to 125°C
TYP
MAX
MIN
MAX
MIN
MAX
3.8
5.5
1
6.5
1
7
3.8
5.5
1
6.5
1
7
5.3
7.5
1
6.5
1
7
5.3
7.5
1
6.5
1
7
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UNIT
ns
ns
5
SN74AHC1G04
SCLS318T – MARCH 1996 – REVISED JANUARY 2016
www.ti.com
6.8 Operating Characteristics
VCC = 5 V, TA = 25°C
PARAMETER
Cpd
TEST CONDITIONS
Power dissipation capacitance
No load,
TYP
f = 1 MHz
UNIT
12
pF
6.9 Typical Characteristics
4
5
3.5
4
2.5
TPD (ns)
TPD (ns)
3
2
1.5
3
2
1
1
0.5
TPD in ns
0
-100
TPD in ns
0
-50
0
50
Temperature (qC)
100
150
0
1
D001
Figure 1. TPD vs Temperature at 5 V
6
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2
3
VCC
4
5
6
D002
Figure 2. TPD vs VCC at 25°C
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SCLS318T – MARCH 1996 – REVISED JANUARY 2016
7 Parameter Measurement Information
From Output
Under Test
RL = 1 kΩ
From Output
Under Test
Test
Point
VCC
Open
S1
TEST
GND
CL
(see Note A)
CL
(see Note A)
S1
Open
VCC
GND
VCC
tPLH/tPHL
tPLZ/tPZL
tPHZ/tPZH
Open Drain
LOAD CIRCUIT FOR
3-STATE AND OPEN-DRAIN OUTPUTS
LOAD CIRCUIT FOR
TOTEM-POLE OUTPUTS
VCC
50% VCC
Timing Input
tw
tsu
VCC
Input
VCC
50% VCC
50% VCC
0V
th
50% VCC
Data Input
50% VCC
0V
0V
VOLTAGE WAVEFORMS
SETUP AND HOLD TIMES
VOLTAGE WAVEFORMS
PULSE DURATION
VCC
50% VCC
Input
0V
tPHL
tPLH
In-Phase
Output
50% VCC
Output
Waveform 1
S1 at VCC
(see Note B)
50% VCC
50% VCC
VOH
50% VCC
VOL
50% VCC
0V
tPLZ
tPZL
≈VCC
50% VCC
Output
Waveform 2
S1 at GND
(see Note B)
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES
INVERTING AND NONINVERTING OUTPUTS
VOL + 0.3 V
VOL
tPHZ
tPZH
tPLH
tPHL
Out-of-Phase
Output
VOH
50% VCC
VOL
VCC
Output
Control
50% VCC
50% VCC
VOH − 0.3 V
VOH
≈0 V
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
LOW- AND HIGH-LEVEL ENABLING
A.
CL includes probe and jig capacitance.
B.
Waveform 1 is for an output with internal conditions such that the output is low except when disabled by the output
control.
Waveform 2 is for an output with internal conditions such that the output is high except when disabled by the output
control.
C.
All input pulses are supplied by generators having the following characteristics: PRR ≤ 1 MHz, ZO = 50 Ω, tr ≤ 3 ns, tf
≤ 3 ns.
D.
The outputs are measured one at a time with one input transition per measurement.
E.
All parameters and waveforms are not applicable to all devices.
Figure 3. Load Circuit And Voltage Waveforms
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8 Detailed Description
8.1 Overview
The SN74AHC1G04 device contains one inverter gate. The device performs the Boolean function Y = A.
This single gate inverter has Schmitt-Trigger action on its input, allowing for slower rise and fall times and some
noise rejection. This is not a true Schmitt-Trigger, so there is a limit on rise and fall times.
8.2 Functional Block Diagram
A
Y
Figure 4. Logic Diagram (Positive Logic)
8.3 Feature Description
•
•
•
Wide operating voltage range
– Operates from 2 V to 5.5 V
Allows down-voltage translation
– Inputs accept voltages to 5.5 V
Lower drive
– This will produce slower edges and help prevent ringing on outputs
8.4 Device Functional Modes
Table 1. Function Table
8
INPUT
A
OUTPUT
Y
H
L
L
H
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
SN74AHC1G04 is a low-drive CMOS device that can be used for a multitude of inverting buffer type functions. It
can produce 8 mA of drive current at 5 V, making it Ideal for driving multiple outputs and good for low-noise
applications. The inputs are 5.5-V tolerant, allowing it to translate down to VCC.
9.2 Typical Application
5-V accessory
3.3-V or 5-V regulated
0.1 µF
Figure 5. Typical Application Schematic
9.2.1 Design Requirements
This device uses CMOS technology and has balanced output drive. Care should be taken to avoid bus
contention because it can drive currents that would exceed maximum limits. The high drive will also create fast
edges into light loads, so routing and load conditions should be considered to prevent ringing.
9.2.2 Detailed Design Procedure
1. Recommended Input Conditions
– For rise time and fall time specifications, see Δt/ΔV in the Recommended Operating Conditions table.
– For specified High and low levels, see VIH and VIL in the Recommended Operating Conditions table.
– Inputs are overvoltage tolerant allowing them to go as high as 5.5 V at any valid VCC.
2. Recommend Output Conditions
– Load currents should not exceed 25 mA per output and 50 mA total for the part.
– Outputs should not be pulled above VCC.
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www.ti.com
Typical Application (continued)
9.2.3 Application Curves
Figure 6. Typical Application Curve
10 Power Supply Recommendations
The power supply can be any voltage between the MIN and MAX supply voltage rating located in the
Recommended Operating Conditions table.
Each VCC pin should have a good bypass capacitor to prevent power disturbance. For devices with a single
supply, 0.1 μF is recommended. If there are multiple VCC pins, 0.01 μF or 0.022 μF is recommended for each
power pin. It is acceptable to parallel multiple bypass caps to reject different frequencies of noise. A 0.1 μF and
1 μF are commonly used in parallel. The bypass capacitor should be installed as close to the power pin as
possible for best results.
10
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SCLS318T – MARCH 1996 – REVISED JANUARY 2016
11 Layout
11.1 Layout Guidelines
When using multiple bit logic devices, inputs should not float. In many cases, functions or parts of functions of
digital logic devices are unused. Some examples are when only two inputs of a triple-input AND gate are used,
or when only 3 of the 4-buffer gates are used. Such input pins should not be left unconnected because the
undefined voltages at the outside connections result in undefined operational states.
Specified in Figure 7 are rules that must be observed under all circumstances. All unused inputs of digital logic
devices must be connected to a high or low bias to prevent them from floating. The logic level that should be
applied to any particular unused input depends on the function of the device. Generally they will be tied to GND
or VCC, whichever makes more sense or is more convenient. It is acceptable to float outputs unless the part is a
transceiver. If the transceiver has an output enable pin, it will disable the outputs section of the part when
asserted. This will not disable the input section of the I/Os so they also cannot float when disabled.
11.2 Layout Example
Vcc
Input
Unused Input
Output
Unused Input
Output
Input
Figure 7. Layout Diagram
12 Device and Documentation Support
12.1 Trademarks
All trademarks are the property of their respective owners.
12.2 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.3 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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11
PACKAGE OPTION ADDENDUM
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4-Apr-2019
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
SN74AHC1G04DBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
-40 to 125
(A043, A04G, A04J,
A04L, A04S)
SN74AHC1G04DBVRE4
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
A04G
SN74AHC1G04DBVRG4
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
A04G
SN74AHC1G04DBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
-40 to 125
(A043, A04G, A04J,
A04L, A04S)
SN74AHC1G04DBVTG4
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
A04G
SN74AHC1G04DCK3
ACTIVE
SC70
DCK
5
3000
Pb-Free
(RoHS)
CU SNBI
Level-1-260C-UNLIM
-40 to 85
ACY
SN74AHC1G04DCKR
ACTIVE
SC70
DCK
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
-40 to 125
(AC3, ACG, ACJ, AC
L, ACS)
SN74AHC1G04DCKRE4
ACTIVE
SC70
DCK
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
AC3
SN74AHC1G04DCKRG4
ACTIVE
SC70
DCK
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
AC3
SN74AHC1G04DCKT
ACTIVE
SC70
DCK
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
-40 to 125
(AC3, ACG, ACJ, AC
L, ACS)
SN74AHC1G04DCKTE4
ACTIVE
SC70
DCK
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
AC3
SN74AHC1G04DCKTG4
ACTIVE
SC70
DCK
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
AC3
SN74AHC1G04DRLR
ACTIVE
SOT-5X3
DRL
5
4000
Green (RoHS
& no Sb/Br)
CU NIPDAU |
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
(ACB, ACS)
SN74AHC1G04DRLRG4
ACTIVE
SOT-5X3
DRL
5
4000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
(ACB, ACS)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
4-Apr-2019
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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