MTN7000ZA3

CYStech Electronics Corp. N-CHANNEL MOSFET Spec. No. : C403A3 Issued Date : 2006.07.14 Revised Date : Page No. : 1/6 MTN7000ZA3 Description The MTN7000ZA3 is a N-channel enhancement-mode MOSFET. Features • Low on-resistance • High ESD • High speed switching • Low-voltage drive(4V) • Easily designed drive circuits • Easy to use in parallel • Pb-free package Symbol MTN7000ZA3 D Outline TO-92 G S G：Gate S：Source D：Drain SGD MTN7000ZA3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Reverse Current Continuous Pulsed Continuous Pulsed Spec. No. : C403A3 Issued Date : 2006.07.14 Revised Date : Page No. : 2/6 Symbol VDSS VGSS ID IDP IDR IDRP PD Rth,JA TCH Tstg ESD susceptibility Total Power Dissipation Thermal Resistance, Junction to Ambient Channel Temperature Storage Temperature Note : *1. Pulse Width ≤ 300µs, Duty cycle ≤2% *2. Human body model, 1.5kΩ in series with 100pF Limits 60 ±20 300 700 300 700 2000 400 312.5 +150 -55~+150 *1 *1 *2 Unit V V mA mA mA mA V mW °C/W °C °C Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. BVDSS* 60 VGS(th) 1 2.5 IGSS ±10 IDSS 1 1.8 2.3 RDS(ON)* 1.25 1.7 GFS 200 VSD 1.4 Ciss 60 Coss 25 Crss 22 - Unit V V µA µA Ω mS V pF Test Conditions VGS=0, ID=10µA VDS=VGS, ID=1mA VGS=±20V, VDS=0 VDS=60V, VGS=0 ID=300mA, VGS=4V ID=300mA, VGS=10V VDS=10V, ID=300mA ISD=115mA, VGS=0 VDS=25V, VGS=0, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Ordering Information Device MTN7000ZA3 Package TO-92 (Pb-free) Shipping 2000 pcs / Tape & Reel Marking N7000 MTN7000ZA3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Typical Output Characteristics 1.2 1 Drain Current - ID(A) 0.8 0.6 0.4 3V 6V 4V Spec. No. : C403A3 Issued Date : 2006.07.14 Revised Date : Page No. : 3/6 Typical Transfer Characteristics 0.7 0.6 Drain Current -ID(A) 0.5 0.4 0.3 0.2 0.1 VGS=2.2V VDS=10V 3.5V 0.2 0 0 1 2 3 Drain-Source Voltage -VDS(V) 4 0 0 1 2 3 Gate-Source Voltage-VGS(V) 4 Static Drain-Source On-State resistance vs Drain Current Static Drain-Source On-State resistance vs Drain Current 10 Static Drain-Source On-State Resistance-RDS(on)(Ω) Static Drain-Source On-State Resistance-RDS(on)(Ω) VGS=4V 10 1 1 VGS=4V VGS=10V 0.1 0.01 0.1 Drain Current-ID(A) 1 0.1 0.01 0.1 Drain Current-ID(A) Reverse Drain Current vs Source-Drain Voltage 10 1 Static Drain-Source On-State Resistance vs Gate-Source Voltage 7 Static Drain-Source On-State Resistance-RDS(ON)(Ω) 6 5 4 3 2 1 0 0 5 10 15 20 Gate-Source Voltage-VGS(V) 25 150mA ID=300mA Reverse Drain Current -IDR(A) 1 0.1 0.01 VGS=0V 0.001 0 0.2 0.4 0.6 0.8 Source-Drain Voltage-VSD(V) 1 MTN7000ZA3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) R everse Drain Current vs Source-Drain Voltage 10 Spec. No. : C403A3 Issued Date : 2006.07.14 Revised Date : Page No. : 4/6 Power Derating Curve 500 Reverse Drain Current -IDR(A) 1 VGS=0V Power Dissipation---PD(mW) 400 300 200 100 0 0.1 VGS=10V 0.01 0.001 0 0.2 0.4 0.6 0.8 Source-Drain Voltage-VSD(V) 1 0 50 100 150 Ambient Temperature---TA(℃) 200 MTN7000ZA3 CYStek Product Specification CYStech Electronics Corp. TO-92 Taping Outline Spec. No. : C403A3 Issued Date : 2006.07.14 Revised Date : Page No. : 5/6 DIM A D D1 D2 E F1,F2 F1,F2 H H1 H2 H2A H3 H4 L L1 P P1 P2 T T1 T2 W W1 - Item Component body height Tape Feed Diameter Lead Diameter Component Body Diameter Component Lead Pitch F1-F2 Height Of Seating Plane Feed Hole Location Front To Rear Deflection Deflection Left Or Right Component Height Feed Hole To Bottom Of Component Lead Length After Component Removal Lead Wire Enclosure Feed Hole Pitch Center Of Seating Plane Location 4 Feed Hole Pitch Over All Tape Thickness Total Taped Package Thickness Carrier Tape Thickness Tape Width Adhesive Tape Width 20 pcs Pitch Millimeters Min. 4.33 3.80 0.36 4.33 1.5 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 253 Max. 4.83 4.20 0.53 4.83 2.0 2.90 ±0.3 16.50 9.50 1 1 27 21 11 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00 255 MTN7000ZA3 CYStek Product Specification CYStech Electronics Corp. TO-92 Dimension Marking: Spec. No. : C403A3 Issued Date : 2006.07.14 Revised Date : Page No. : 6/6 A B 1 2 3 α2 N7000 α3 C D H I E F G α1 Style: Pin 1.Source 2.Gate 3.Drain 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN7000ZA3 CYStek Product Specification