2N6520

DC COMPONENTS CO., LTD. R 2N6520 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for applications requiring high breakdown voltage. TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70) o o Pinning 1 = Emitter 2 = Base 3 = Collector Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -350 -350 -5 -500 625 +150 -55 to +150 Unit V V V mA mW o o .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .022(0.56) .014(0.36) 321 .148(3.76) .132(3.36) C .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat)1 VCE(sat)2 VCE(sat)3 VBE(sat)1 Min -350 -350 -5 20 30 30 20 40 2% Typ - Max -50 -50 -0.30 -0.35 -0.50 -0.75 -0.85 -0.90 -2 200 200 200 6 Unit V V V nA nA V V V V V V V MHz pF Test Conditions IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCB=-250V, IE=0 VEB=-4V, IC=0 IC=-10mA, IB=-1mA IC=-20mA, IB=-2mA IC=-30mA, IB=-3mA IC=-10mA, IB=-1mA IC=-20mA, IB=-2mA IC=-30mA, IB=-3mA IC=-100mA, VCE=-10V IC=-1mA, VCE=-10V IC=-10mA, VCE=-10V IC=-30mA, VCE=-10V IC=-50mA, VCE=-10V IC=-10mA, VCE=-20V, f=20MHz VCB=-20V, f=1MHz, IE=0 Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current EmitterCutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) Base-Emitter On Voltage(1) VBE(sat)2 VBE(sat)3 VBE(on) hFE1 hFE2 hFE3 hFE4 fT Cob DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width 380µs, Duty Cycle