2N6520

MCC Features
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# NPN 2N6515, 2N6517 PNP 2N6519, 2N6520 High Voltage Transistor 625mW l Through Hole Package l 150oC Junction Temperature l Voltage and Current are negative for PNP transistors Pin Configuration Bottom View C B E TO-92 Mechanical Data l Case: TO-92, Molded Plastic l Polarity: indicated as above. A E B Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic 2N6515 2N6519 2N6517, 2N6520 Collector-Base Voltage 2N6515 2N6519 2N6517, 2N6520 Emitter-Base Voltage 2N6515-6517 2N6519-6520 Base Current Collector Current(DC) Power Dissipation@TA=25 C Power Dissipation@TC=25o C Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Case Operating & Storage Temperature o Symbol VCEO Value 250 300 350 250 300 350 6.0 5.0 250 500 625 5.0 1.5 12 200 83.3 -55~150 Unit V C Collector-Emitter Voltage VCBO V D VEBO IB IC Pd Pd RqJA RqJC V mA mA W o mW/ C W o mW/ C o o G DIMENSIONS C/W C/W o Tj, TSTG C DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE www.mccsemi.com NPN 2N6515 2N6517 PNP 2N6519 2N6520 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol MCC Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 2N6515 2N6519 2N6517, 2N6520 V(BR)CBO 2N6515 2N6519 2N6517, 2N6520 V(BR)EBO 2N6515, 2N6517 2N6519, 2N6520 ICBO 2N6515 2N6519 2N6517, 2N6520 IEBO 2N6515, 2N6517 2N6519, 2N6520 — — 50 50 — — — 50 50 50 nAdc 6.0 5.0 — — nAdc 250 300 350 — — — Vdc 250 300 350 — — — Vdc Vdc Collector–Base Breakdown Voltage (IC = 100 µAdc, IE = 0 ) Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 150 Vdc, IE = 0) (VCB = 200 Vdc, IE = 0) (VCB = 250 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) ON CHARACTERISTICS(1) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) hFE 2N6515 2N6519 2N6517, 2N6520 2N6515 2N6519 2N6517, 2N6520 2N6515 2N6519 2N6517, 2N6520 2N6515 2N6519 2N6517, 2N6520 2N6515 2N6519 2N6517, 2N6520 VCE(sat) — — — — VBE(sat) — — — VBE(on) — 0.75 0.85 0.90 2.0 Vdc 0.30 0.35 0.50 1.0 Vdc 35 30 20 50 45 30 50 45 30 45 40 20 25 20 15 — — — — — — 300 270 200 220 200 200 — — — Vdc — (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) Collector–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) Base–Emitter On Voltage (IC = 100 mAdc, VCE = 10 Vdc) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. www.mccsemi.com NPN 2N6515 2N6517 PNP 2N6519 2N6520 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol MCC Min Max Unit SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product(1) (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) Collector–Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N6515, 2N6517 2N6519, 2N6520 fT Ccb Ceb — — 80 100 40 — 200 6.0 MHz pF pF SWITCHING CHARACTERISTICS Turn–On Time (VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) Turn–Off Time (VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. ton toff — — 200 3.5 µs µs www.mccsemi.com NPN 2N6515 2N6517 PNP 2N6519 2N6520 NPN 2N6515 200 VCE = 10 V TJ = 125°C hFE , DC CURRENT GAIN 200 VCE = -10 V MCC PNP 2N6519 TJ = 125°C 25°C -55°C 100 70 50 hFE , DC CURRENT GAIN 100 70 50 25°C -55°C 30 20 1.0 30 20 -1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 1. DC Current Gain 2N6517 200 VCE = 10 V TJ = 125°C hFE , DC CURRENT GAIN 200 VCE = -10 V 100 70 50 30 20 2N6520 TJ = 125°C 25°C -55°C hFE , DC CURRENT GAIN 100 70 50 30 20 25°C -55°C 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 10 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 2. DC Current Gain BANDWIDTH PRODUCT (MHz) 100 70 50 TJ = 25°C VCE = 20 V f = 20 MHz BANDWIDTH PRODUCT (MHz) 2N6515, 2N6517 2N6519, 2N6520 100 70 50 TJ = 25°C VCE = -20 V f = 20 MHz 30 20 30 20 f T, CURRENT-GAIN 10 1.0 f T, CURRENT-GAIN 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 10 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 3. Current–Gain — Bandwidth Product www.mccsemi.com NPN 2N6515 2N6517 PNP 2N6519 2N6520 NPN 2N6515, 2N6517 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 2.0 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 5.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V TJ = 25°C -1.4 -1.2 V, VOLTAGE (VOLTS) -1.0 -0.8 -0.6 -0.4 -0.2 0 -1.0 VCE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10 TJ = 25°C MCC PNP 2N6519, 2N6520 VBE(on) @ VCE = -10 V VCE(sat) @ IC/IB = 5.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 4. “On” Voltages 2N6515, 2N6517 RθV, TEMPERATURE COEFFICIENTS (mV/°C) 2.0 1.5 1.0 0.5 0 RθVC for VCE(sat) -55°C to 25°C -55°C to 125°C RθVB for VBE 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 IC + 10 IB 25°C to 125°C RθV, TEMPERATURE COEFFICIENTS (mV/°C) 2.5 2.5 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 -1.0 RθVC for VCE(sat) RθVB for VBE 2N6519, 2N6520 IC + 10 IB 25°C to 125°C -55°C to 25°C -0.5 -1.0 -1.5 -2.0 -2.5 1.0 -55°C to 125°C -50 -70 -100 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) Figure 5. Temperature Coefficients 2N6515, 2N6517 100 70 50 C, CAPACITANCE (pF) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 200 TJ = 25°C C, CAPACITANCE (pF) Ceb 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 -0.2 2N6519, 2N6520 Ceb TJ = 25°C Ccb Ccb -0.5 -1.0 -2.0 -5.0 -10 -20 -50 VR, REVERSE VOLTAGE (VOLTS) -100 -200 Figure 6. Capacitance www.mccsemi.com NPN 2N6515 2N6517 PNP 2N6519 2N6520 MCC PNP 2N6519, 2N6520 1.0 k 700 500 300 t, TIME (ns) 200 100 70 50 30 20 tr NPN 2N6515, 2N6517 1.0 k 700 500 300 t, TIME (ns) 200 100 70 50 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VCE(off) = 100 V IC/IB = 5.0 TJ = 25°C td @ VBE(off) = 2.0 V td @ VBE(off) = 2.0 V VCE(off) = -100 V IC/IB = 5.0 TJ = 25°C tr 10 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 7. Turn–On Time 2N6515, 2N6517 10 k 7.0 k 5.0 k 3.0 k t, TIME (ns) 2.0 k 1.0 k 700 500 300 200 100 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 tf VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25°C 2.0 k ts 1.0 k 700 500 300 200 100 70 50 30 20 -1.0 ts 2N6519, 2N6520 tf VCE(off) = -100 V IC/IB = 5.0 IB1 = IB2 TJ = 25°C -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 8. Turn–Off Time www.mccsemi.com