2N6520

TIGER ELECTRONIC CO.,LTD 2N6520 PNP EPITAXIAL PLANAR TRANSISTOR Description The 2N6520 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Emitter Breakdown Voltage. • Low Collector-Emitter Saturation Voltage. • The 2N6520 is complementary to 2N6517. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................... -55~+150°C Junction Temperature ................................................................................................. +150°C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C)............................................................................................. 625 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage.................................................................................................... 350 V VCEO Collector to Emitter Voltage................................................................................................. 350 V VEBO Emitter to Base Voltage........................................................................................................... 5 V IC Collector Current ................................................................................................................... 500 mA IB Base Current ......................................................................................................................... 250 mA Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 VCE(SAT)4 VBE(ON) VBE(SAT)1 VBE(SAT)2 VBE(SAT)3 hFE1 hFE2 hFE3 hFE4 hFE5 fT Cob Min. 350 350 5 20 30 30 20 15 40 Typ. Max. 50 50 0.30 0.35 0.50 1.00 2 0.75 0.85 0.90 200 200 200 6 Unit V V V nA nA V V V V V V V V Test Conditions IC=100uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=250V, IE=0 VEB=4V, IC=0 IC=10mA IB=1mA IC=20mA IB=2mA IC=30mA IB=3mA IC=50mA IB=5mA IC=100mA VCE=10V IC=10mA IB=1mA IC=20mA IB=2mA IC=30mA IB=3mA VCE=10V IC=1mA VCE=10V IC=10mA VCE=10V IC=30mA VCE=10V IC=50mA VCE=10V IC=100mA IC=10mA VCE=20V f=20MHz VCB=20V f=1MHz IE=0 TIGER ELECTRONIC CO.,LTD MHz pF TIGER ELECTRONIC CO.,LTD Characteristics Curve Current Gain & Collector Current 100 VCE=10V 10000 100000 Saturation Voltage & Collector Current Saturation Voltage (mV) 1000 VBE(sat) @ IC=10IB 100 VCE(sat) @ IC=10IB hFE 10 10 1 0.01 0.1 1 10 100 1000 1 0.001 0.01 0.1 1 10 100 1000 Collector Current (mA) Collector Current (mA) On Voltage & Collector CurrentT 10000 Cutoff Frequency & Collector Current 100 1000 VBE(ON) @ VCE=10V 100 0.01 Cutoff Frequency On Voltage (mV) VCE=20V 10 0.1 1 10 100 1000 1 10 100 Collector Current (mA) Collector Current (mA) Capacitance & Reverse-Biased Voltage 100 Capacitance (pF) 10 Cob 1 0.1 1 10 100 Reverse-Biased Voltage (V) TIGER ELECTRONIC CO.,LTD TIGER ELECTRONIC CO.,LTD TO-92 Dimension A B 12 3 α2 α3 C D 3-Lead TO-92 Plastic Package TGS Package Code : A H I E F G α1 *:Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° TIGER ELECTRONIC CO.,LTD