2N6520

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N6520 TRANSISTOR (PNP) 1. EMITTER FEATURES z Complement to 2N6517 2. BASE 3. COLLECTOR 0  Equivalent Circuit 1 'HYLFHFRGH  6ROLGGRW *UHHQPROGLQJFRPSRXQGGHYLFH  23 444  LIQRQHWKHQRUPDOGHYLFH ;;; &RGH  &('  ,& &  "  ! "-.* "-.* "-./ 1 72 %XON SFV%DJ 17$  72 7DSH SFV%R[     "    !  #$%&  Collector-Base Voltage -350 V #$'&  Collector-Emitter Voltage -350 V #'%&  Emitter-Base Voltage -5 V $  Collector Current -Continuous "(  Collector Power Dissipation   +  TJ, *  www.jscj-elec.com # -0.5 A 625 mW  Thermal Resistance I rom Junction Wo Ambient    /W Operation Junction and Storage Temperature Range 1 -55 a  Rev. - 2.0 '5'$ $5$6$ ' $ Ta =25  unless otherwise specified Parameter Collector-base breakdown voltage Symbol V(BR)CBO * Test conditions Min Typ Max Unit IC=- 0.1mA,IE=0 -350 V IC=-1mA,IB=0 -350 V -5 V Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IE=-0.01mA,IC=0 Collector cut-off current ICBO VCB=-250V,IE=0 -0.05 A Emitter cut-off current IEBO VEB=-4V,IC=0 -0.05 A DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency hFE VCE(sat) VBE (sat) VBE fT * VCE=-10V, IC=-1mA 20 VCE=-10V, IC=-10mA 30 VCE=-10V, IC=-30mA 30 200 VCE=-10V, IC=-50mA 20 200 VCE=-10V, IC=-100mA 15 IC=-10mA,IB=-1mA -0.3 V IC=-20mA,IB=-2mA -0.35 V IC=-30mA,IB=-3mA -0.5 V IC=-50mA,IB=-5mA -1 V IC=-10mA,IB=-1mA -0.75 V IC=-20mA,IB=-2mA -0.85 V IC=-30mA,IB=-3mA -0.9 V -2 V 200 MHz VCE=-10V, IC=-100mA VCE=-20V,IC=-10mA,f=20MHz 40 *Pulse test: pulse width 300s, duty cycle 2.0%. www.jscj-elec.com 2 Rev. - 2.0 Typical Characteristics IC -80 hFE 1000 COMMON EMITTER Ta=25ć -70 (mA) VCE —— —— IC COMMON EMITTER VCE= -10V -500uA -450uA -50 -350uA DC CURRENT GAIN COLLECTOR CURRENT -300uA -40 -250uA -30 -200uA -150uA -20 Ta=100ć hFE -400uA IC -60 100 Ta=25ć -100uA -10 IB=-50uA -0 -0 -1 -2 -3 -4 -5 -6 -7 -8 -9 COLLECTOR-EMITTER VOLTAGE VCEsat —— -11 10 -12 -1 IC -10 COLLECTOR CURRENT VBEsat —— -1000 IC (mA) -100 -200 IC -900 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -10000 -10 VCE (V) -1000 Ta=100 ć -100 Ta=25ć -800 Ta=25ć -700 -600 -500 Ta=100 ć -400 -300 -200 ȕ=10 -10 -1 -10 COLLECTOR CURRENT IC —— IC (mA) -100 ȕ=10 -100 -1 -200 VBE (mA) IC COMMON EMITTER VCE=-10V -0 -300 -600 -900 50 TRANSITION FREQUENCY T =2 5ć a T =1 00ć a -10 COMMON EMITTER VCE= -20V Ta=25ć 10 -1 -1200 -10 -5 BASE-EMITTER VOLTAGE V BE (mV) 300 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Cob 10 1 -0.1 www.jscj-elec.com V (V) -10 (mA) Ta 500 400 300 200 100 0 -1 REVERSE VOLTAGE —— IC 600 Ta=25 ć Cib PC 700 CT (pF) 100 -100 COLLECTOR CURRENT f=1MHz IE=0/IC=0 CAPACITANCE —— IC (MHz) fT -100 IC (mA) fT 100 -500 -100 COLLECTOR CURRENT -500 COLLECTOR CURRENT -10 -20 3 0 25 50 75 100 AMBIENT TEMPERATURE Ta (ć ) 125 150 Rev. - 2.0  &9:"-.*&(   ! A A1 b c D D1 E e e1 L  h (   ( -  4  4 3.300 3.700 0.130 0.146 1.100 1.400 0.043 0.055 0.380 0.550 0.015 0.022 0.360 0.510 0.014 0.020 4. 4.700 3.430 0.135 4.300 4.700 0.169 0.185 1.270 TYP 0.050 TYP 2.440 2.640 0.096 0.104 14.100 14.500 0.555 0.571 1.600 0.063 0.000 0.380 0.000 0.015 &9:**"5 NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0  &9:7DSHDQG5HHO www.jscj-elec.com 5 Rev. - 2.0