HGT1S3N60C3D

SEMICONDUCTOR HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Packaging JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) May 1996 Features • 6A, 600V at TC = +25oC • 600V Switching SOA Capability • Typical Fall Time - 130ns at TJ = +150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. PACKAGING AVAILABILITY PART NUMBER PACKAGE BRAND HGTP3N60C3D TO-220AB G3N60C3D HGT1S3N60C3D TO-262AA G3N60C3D HGT1S3N60C3DS TO-263AB G3N60C3D NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e. HGT1S3N60C3DS9A. Formerly Developmental Type TA49119. JEDEC TO-262AA COLLECTOR (FLANGE) A EMITTER COLLECTOR GATE JEDEC TO-263AB M A A COLLECTOR (FLANGE) GATE EMITTER Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G E Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTP3N60C3D, HGT1S3N60C3D HGT1S3N60C3DS 600 6 3 24 ±20 ±30 18A at 480V 33 0.27 -40 to +150 260 8 UNITS V A A A V V W W/ oC oC oC µs Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = +110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate-Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = +150oC, Fig. 14. . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 10V, Fig 6 . . . . . . . . . . . . . . . . . . . . .tSC NOTE: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = +125oC, RGE = 82Ω. CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1996 File Number 4140 1 Specifications HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS Electrical Specifications PARAMETERS Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current TC = +25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250µA, VGE = 0V VCE = BVCES VCE = BVCES Collector-Emitter Saturation Voltage VCE(SAT) IC = IC110, VGE = 15V IC = 250µA, VCE = VGE VGE = ±25V TJ = +150oC RG = 82Ω VGE = 15V L = 1mH Gate-Emitter Plateau Voltage On-State Gate Charge VGEP QG(ON) IC = IC110, VCE = 0.5 BVCES IC = IC110, VCE = 0.5 BVCES VGE = 15V VGE = 20V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 1) Diode Forward Voltage Diode Reverse Recovery Time tD(ON)I tRI tD(OFF)I tFI EON EOFF VEC tRR IEC = 3A IEC = 3A, dIEC/dt = 200A/µs IEC = 1A, dIEC/dt = 200A/µs Thermal Resistance RθJC IGBT Diode TJ = 150oC ICE = IC110 VCE(PK) = 0.8 BVCES VGE = 15V RG = 82Ω L = 1mH 8.3 10.8 13.8 5 10 325 130 85 245 2.0 22 17 13.5 17.3 400 275 2.5 28 22 3.75 3.0 V nC nC ns ns ns ns µJ µJ V ns ns oC/W oC/W MIN 600 3.0 TYP 1.65 1.85 5.5 MAX 250 2.0 2.0 2.2 6.0 ±250 - UNITS V µA mA V V V TC = +25oC TC = +150oC TC = +25oC TC = +150oC TC = +25oC Gate-Emitter Threshold Voltage VGE(TH) IGES SSOA Gate-Emitter Leakage Current Switching SOA VCE(PK)=480V VCE(PK)=600V 18 2 - nA A A NOTE: 1. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses. HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 2 HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS Typical Performance Curves ICE, COLLECTOR-EMITTER CURRENT (A) DUTY CYCLE