AO3407

AO3407 30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@ 4.1A < 64.5m Ω RDS(ON), Vgs@-4.5V, Ids@-3.0A < 87m Ω Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23-3L G REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M S Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Symbol Limit Unit VDS VGS ID IDM TA = 25 C o o -30 ± 20 V 5.3 -20 1.4 1 -55 to 150 125 o A Maximum Power Dissipation Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) TA = 75 C PD TJ, Tstg RθJA W o C C/W １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ AO3407 30V P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage Symbol Test Condition Min. Typ. Miax. Unit BVDSS RDS(on) RDS(on) VGS = 0V, ID = -250uA VGS = -10V, ID = -4.1A VGS = -4.5V, ID = -3A -30 48.0 64.0 64.5 87.0 V mΩ VGS(th) IDSS IGSS gfs VDS =VGS, ID = -250uA VDS = -24V, VGS = 0V VGS = ± 20V, VDS = 0V VDS = -5V, ID = - 4 A -1.0 -1 -3.0 -1 ± 100 V uA nA S 5.5 Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS = -15V , ID = -5.3A VGS = -10V 9.35 3.43 1.7 10.8 2.33 22.53 3.87 551.57 90.96 60.79 pF ns nC VDD = -15V, RL=15Ω ID = -1 A, VGEN = -10 V RG = 6Ω VDS = -15 V, VGS = 0V f = 1.0 MHz IS VSD IS = 2.6 A, VGS = 0V -2.6 -1.3 A V Note: Pulse test: pulse width