AO3407

Plastic-Encapsulate Mosfets AO3407 FEATURES P-Channel MOSFET The AO3407 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. D 1.Gate 2.Source G SOT-23 3.Drain S Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -4.1 A Power Dissipation PD 350 mW RθJA 357 ℃/W Thermal Resistance from Junction to Ambient Junction Temperature TJ 150 ℃ Storage Temperature Tstg -55~+150 ℃ GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P4-P1 Plastic-Encapsulate Mosfets AO3407 Electrical Characteristics (TA=25°C, unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Static characteristics Drain-source breakdown voltage BVDSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V -1 µA Gate-source leakage current IGSS VGS =±20V, VDS = 0V ±100 nA VGS =-10V, ID =-4.1A 60 mΩ VGS =-4.5V, ID =-3A 87 mΩ Drain-source on-resistance (note 1) Forward tranconductance (note 1) Gate threshold voltage Diode forward voltage (note 1) RDS(on) gFS VGS(th) VSD -30 VDS =-5V, ID =-4A 5.5 VDS =VGS, ID =-250µA -1 V S IS=-1A,VGS=0V -3 V -1 V Dynamic characteristics (note 2) Input capacitance Ciss 700 pF Output capacitance Coss 120 pF Reverse transfer capacitance Crss 75 pF td(on) 8.6 ns VGS=-10V,VDS=-15V, 5.0 ns RL=3.6Ω,RGEN=3Ω 28.2 ns 13.5 ns VDS =-15V,VGS =0V,f =1MHz Switching Characteristics (note 2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) tf Notes: 1. 2. Pulse test: Pulse width ≤300µs, duty cycle ≤2%. These parameters have no way to verify. GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P4-P2 Plastic-Encapsulate Mosfets AO3407 Typical Characteristics 30 30 VDS=-5V -6V 25 25 -10V -4.5V 20 -ID(A) -ID (A) 20 15 15 -4V 10 10 25°C 125°C 5 5 VGS=-3.5V 0 0 0 1 2 3 4 0.5 5 80 2.5 3.5 4.5 5.5 Normalized On-Resistance 1.8 70 VGS=-4.5V 60 RDS(ON) (mΩ Ω) 1.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 50 40 30 VGS=-10V 20 VGS=-10V ID=-4.1A 1.6 1.4 17 5 2 10 =-4.5V 1.2 VGS ID=-3A 1 0.8 10 0 2 0 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 1.0E+02 120 ID=-4.1A 1.0E+01 100 40 125°C 80 125°C 60 -IS (A) RDS(ON) (mΩ Ω) 1.0E+00 1.0E-01 1.0E-02 25°C 1.0E-03 40 25°C 1.0E-04 1.0E-05 20 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) GUANGDONG HOTTECH 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) INDUSTRIAL CO., LTD Page:P4-P3 Plastic-Encapsulate Mosfets AO3407 Typical Characteristics 800 10 VDS=-15V ID=-4.1A 8 Ciss Capacitance (pF) -VGS (Volts) 600 6 4 400 Coss 200 2 0 Crss 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 0 10 100.0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 40 TA=25°C 10µs RDS(ON) limited 100µs 1ms 1.0 10ms 10ms 0.1 30 Power (W) ID (Amps) 10.0 10 10s TJ(Max)=150°C TA=25°C 20 DC 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 1 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.01 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=125°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P4-P4