AO3407A

UMW R UMW AO3407A P-Channel Enhancement MOSFET Features SOT–23 VDS (V) = -30V ID = -4.1 A RDS(ON) 52m (VGS = -10V) RDS(ON) 87m (VGS = -4.5V) 1. GATE 2. SOURCE D 3. DRAIN G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current Ta = 25℃ ID Ta = 70℃ Pulsed Drain Current Power Dissipation IDM Ta = 25℃ PD Ta = 70℃ Thermal Resistance.Junction- to-Ambient t ≤10s RthJA Steady State Thermal Resistance.Junction- to-Lead RthJL -3.5 A -20 1.4 1 W 90 125 ℃/W 60 Junction Temperature TJ 150 Tstg -55 to 150 1 V -4.1 Storage Temperature Range www.umw-ic.com Unit ℃ 友台半导体有限公司 UMW R UMW AO3407A Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Symbol VDSS IDSS IGSS VGS(th) Test Conditions Min RDS(On) -30 ID=-250μA, VGS=0V VDS=-24V, VGS=0V, TJ=55℃ -5 VDS=VGS ID=-250μA VGS=-10V, ID=-4.A TJ=125℃ ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge Qg Gate Source Charge Qgs VGS=-4.5V, VDS=-5V -10 VDS=-5V, ID=-4A 5.5 ±100 nA -3 V 40.5 52 57 73 64 87 8.2 VGS=0V, VDS=-15V, f=1MHz 75 VGS=0V, VDS=0V, f=1MHz 10 8.6 Turn-On Rise Time tr Turn-Off DelayTime td(off) Maximum Body-Diode Continuous Current Diode Forward Voltage www.umw-ic.com VGS=-10V, VDS=-15V, RL=3.6Ω,RGEN=3Ω 5 ns 28.2 13.5 tf IF=-4A, dI/dt=100A/μs 27 15 IS VSD nC 7 3.1 trr Ω 14.3 VGS=-4.5V, VDS=-15V, ID=-4A Qgd Qrr pF 120 td(on) Body Diode Reverse Recovery Charge S 700 Turn-On DelayTime Body Diode Reverse Recovery Time mΩ A Gate Drain Charge Turn-Off Fall Time μA -1.8 VDS=0V, VGS=±20V -1 Unit V -1 VGS=-4.5V, ID=-3A On state drain current Max VDS=-24V, VGS=0V VGS=-10V, ID=-4.1A Static Drain-Source On-Resistance Typ IS=-1A,VGS=0V 2 -0.77 nC -2.2 A -1 V 友台半导体有限公司 R UMW UMW AO3407A ■ Typical Characterisitics 10 20 -10V -5V -4.5V -4V -ID (A) -ID (A) V DS =-5V 8 15 10 -3.5V 5 4 V GS =-3V 0 0.00 6 125°C 2 25°C 0 1.00 2.00 3.00 4.00 5.00 0 1 100 Normalized On-Resistance (Ω) R DS(ON) (mΩ) 3 4 1.6 80 V GS =-4.5V 60 V GS =-10V 40 20 V GS =-4.5V 1.4 V GS =-10V 1.2 1 I D =-2A 0.8 0 2 4 6 8 10 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 160 1E+01 140 1E+00 ID=-2A 1E-01 -IS (A) 120 R DS(ON) (mΩ) 2 -VGS (Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics 100 125°C 80 125°C 1E-02 1E-03 25°C 1E-04 60 25°C 40 1E-05 1E-06 20 2 4 6 8 0.0 10 www.umw-ic.com 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3 友台半导体有限公司 R UMW UMW AO3407A ■ Typical Characterisitics 1000 10 V DS =-15V I D =-4A 800 Capacitance (pF) -VGS (Volts) 8 6 4 2 C iss 600 400 C oss C rss 200 0 0 0 4 8 12 16 0 -Q g (nC) Figure 7: Gate-Charge Characteristics 100 15 20 25 30 40 T J(Max) =150°C T A =25°C R DS(ON) limited 30 100 µs 10 µs Power (W) -I D (Amps) 10 -VDS (Volts) Figure 8: Capacitance Characteristics T J(Max) =150°C T A =25°C 10 5 1ms 0.1s 10ms 1 20 10 1s 10s DC 0.1 0.1 1 10 -VDS (Volts) 0 0.001 100 Z θJA Normalized Transient Thermal Resistance D=T on/T T J,PK =T A +P DM .ZθJA .RθJA R θJA =90°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) . Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 T on T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance www.umw-ic.com 4 友台半导体有限公司 UMW R Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com UMW AO3407A Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 5 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司