DPG60C300HB

DPG60C300HB HiPerFRED² VRRM = I FAV = 2x 30 A t rr = 35 ns 300 V High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG60C300HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPG60C300HB Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 300 V 300 V VR = 300 V TVJ = 25°C 1 µA VR = 300 V TVJ = 150°C 0.1 mA IF = 30 A TVJ = 25°C 1.34 V IF = 60 A 1.63 V IF = 30 A 1.06 V IF = 60 A TVJ = 150 °C TC = 140 °C rectangular 1.39 V T VJ = 175 °C 30 A TVJ = 175 °C 0.70 V 10.5 mΩ d = 0.5 for power loss calculation only 0.95 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 150 V f = 1 MHz TVJ = 25°C 42 pF TVJ = 25 °C 3 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.3 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 30 A; VR = 200 V -di F /dt = 200 A/µs 160 360 W A TVJ = 125 °C 7 A TVJ = 25 °C 35 ns TVJ = 125 °C 55 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPG60C300HB Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 50 Unit A -55 175 °C -55 150 °C 150 °C 1) 6 Weight MD mounting torque FC mounting force with clip Product Marking 0.8 1.2 Nm 20 120 N Part description D P G 60 C 300 HB IXYS Logo g = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-247AD (3) XXXXXXXXX Part Number Date Code yywwZ 1234 Lot# Location Ordering Standard Ordering Number DPG60C300HB Similar Part DPG60C300QB DPG60C300HJ DPG60C300PC DPF60C300HB Package TO-3P (3) ISOPLUS247 (3) TO-263AB (D2Pak) (2) TO-247AD (3) DPG80C300HB TO-247AD (3) Equivalent Circuits for Simulation I V0 R0 Marking on Product DPG60C300HB * on die level Delivery Mode Tube Code No. 502163 Voltage class 300 300 300 300 300 T VJ = 175°C Fast Diode V 0 max threshold voltage 0.7 V R0 max slope resistance * 7.9 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPG60C300HB Outlines TO-247 A E A2 Ø P1 ØP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 3x b b4 C A1 2x e 1 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPG60C300HB Fast Diode 16 80 0.4 60 IF TVJ = 150°C 40 12 IRM 10 0.3 Qrr IF = 60 A 30 A 15 A 14 IF = 60 A 30 A 15 A [A] 8 [A] [μC] 0.2 20 25°C TVJ = 125°C VR = 200 V 4 0.1 0.0 0.4 0.8 1.2 1.6 2 0 2.0 VF [V] Fig. 1 Forward current IF versus VF 200 400 600 0 -diF /dt [A/μs] Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt 1.4 400 600 TVJ = 125°C VR = 200 V 600 VFR tfr 500 60 1.0 300 IF = 60 A 30 A 15 A 40 0.6 IRM [ns] 30 0.4 Qrr 0.2 0 80 120 160 200 400 100 2 600 0 -diF /dt [A/μs] TVJ [°C] Fig. 4 Dynamic parameters Qrr, IRM versus TVJ 200 400 0 600 -diF /dt [A/μs] Fig. 5 Typ. reverse recovery time trr versus -diF /dt 16 [V] 4 0 0 VFR 6 200 20 40 8 TVJ = 125°C VR = 200 V IF = 30 A tfr trr [ns] Kf 0.8 12 10 400 50 Fig. 6 Typ. forward recovery voltage VFR & time tfr versus diF /dt 1.0 TVJ = 125°C 14 VR = 200 V 0.8 12 ZthJC IF = 15 A 10 Erec 200 -diF /dt [A/μs] Fig. 3 Typ. reverse recov. current IRM versus -diF /dt 70 1.2 TVJ = 125°C VR = 200 V 6 0.6 30 A 60 A 8 [K/W] 0.4 [μJ] 6 Rthi [K/W] 0.1311 0.1377 0.3468 0.2394 0.095 4 0.2 2 0.0 0 200 400 600 -diF /dt [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 1 10 100 1000 ti [s] 0.0018 0.002 0.012 0.07 0.345 10000 t [ms] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c