DPG60C300PC

DPG60C300PC HiPerFRED VRRM = 300 V I FAV = 2x 30 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG60C300PC Marking on Product: DPG60C300PC Backside: cathode 1 4 3 Features / Advantages: Applications: Package: TO-263 (D2Pak) ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212c DPG60C300PC Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 300 V 300 V VR = 300 V TVJ = 25°C 1 µA VR = 300 V TVJ = 150°C 0.1 mA IF = 30 A TVJ = 25°C 1.35 V IF = 60 A 1.66 V IF = 30 A 1.08 V IF = 60 A TVJ = 150 °C TC = 140 °C rectangular 1.43 V T VJ = 175 °C 30 A TVJ = 175 °C 0.70 V 11.1 mΩ d = 0.5 for power loss calculation only 0.85 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 150 V f = 1 MHz TVJ = 25°C 42 pF TVJ = 25 °C 3 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.25 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 30 A; VR = 200 V -di F /dt = 200 A/µs 175 360 W A TVJ = 125 °C 7 A TVJ = 25 °C 35 ns TVJ = 125 °C 55 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20190212c DPG60C300PC Package Ratings TO-263 (D2Pak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C 1.5 Weight FC 20 mounting force with clip Product Marking D P G 60 C 300 PC IXYS yywwZ Logo Date Code Location 60 N Part description XXXXXXXXX Part Number g = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-263AB (D2Pak) (2) 123456 Lot# Ordering Standard Alternative Ordering Number DPG60C300PC-TRL DPG60C300PC-TUB Similar Part DPG60C300HB DPG60C300QB DPG60C300HJ DPF60C300HB Package TO-247AD (3) TO-3P (3) ISOPLUS247 (3) TO-247AD (3) DPG80C300HB TO-247AD (3) Equivalent Circuits for Simulation I V0 R0 Marking on Product DPG60C300PC DPG60C300PC * on die level Delivery Mode Tape & Reel Tube Code No. 503494 524929 Voltage class 300 300 300 300 300 T VJ = 175°C Fast Diode V 0 max threshold voltage 0.7 V R0 max slope resistance * 7.8 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 800 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20190212c DPG60C300PC Outlines TO-263 (D2Pak) Dim. W A A1 H D E Supplier Option D1 L1 c2 4 L L2 1 2 3 c 2x e 3x b2 10.92 (0.430) mm (Inches) 2x b E1 9.02 (0.355) W Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 1 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 4 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20190212c DPG60C300PC Fast Diode 16 80 0.4 IF = 60 A 30 A 15 A 70 60 14 12 0.3 IF 50 TVJ = 150°C IRM Qrr 40 [A] 6 [μC] 20 4 0.1 25°C TVJ = 125°C VR = 200 V 10 0.0 0.4 0.8 1.2 1.6 0 2.0 VF [V] 200 400 600 0 1.0 Kf 0.8 50 Qrr 500 10 400 8 300 6 VFR [ns] 80 120 160 TVJ [°C] 200 400 600 0 -diF /dt [A/μs] 2 200 0 600 400 -diF /dt [A/μs] Fig. 5 Typ. reverse recov. time trr versus -diF /dt 16 TVJ = 125°C VR = 200 V IF = 30 A 0 0 Fig. 4 Typ. dynamic parameters Qrr, IRM versus TVJ 4 100 20 40 [V] 200 30 0.4 12 tfr IF = 60 A [ns] 40 30 A 15 A IRM VFR tfr 60 trr 600 600 TVJ = 125°C VR = 200 V 1.2 400 Fig. 3 Typ. reverse recov. current IRM versus -diF /dt 70 0 200 -diF /dt [A/μs] Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt 1.4 0.2 TVJ = 125°C VR = 200 V 2 -diF /dt [A/μs] Fig. 1 Forward current IF versus VF 0.6 10 8 0.2 [A] 30 IF = 60 A 30 A 15 A Fig. 6 Typ. forward recov. voltage VFR & tfr versus diF /dt 1 TVJ = 125°C 14 VR = 200 V 12 10 IF = 15 A 8 30 A 60 A Erec ZthJC [μJ] 6 [K/W] Rthi [K/W] 0.139 0.176 0.305 0.23 4 2 0 200 400 600 0.1 0.001 -diF /dt [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 0.01 0.1 ti [s] 0.00028 0.0033 0.028 0.17 1 10 t [s] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20190212c