DPG60I300HA

DPG60I300HA HiPerFRED VRRM = 300 V I FAV = 60 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DPG60I300HA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPG60I300HA Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop min. typ. 300 TVJ = 25°C 1 µA VR = 300 V TVJ = 150°C 0.35 mA IF = TVJ = 25°C 1.40 V 1.72 V 1.10 V IF = 60 A TVJ = 150 °C 60 A I F = 120 A average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case V VR = 300 V I F = 120 A I FAV max. Unit 300 V TC = 130 °C rectangular 1.45 V T VJ = 175 °C 60 A TVJ = 175 °C 0.69 V 5.8 mΩ d = 0.5 for power loss calculation only 0.55 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 150 V f = 1 MHz TVJ = 25°C 80 pF TVJ = 25 °C 3.5 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.3 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 60 A; VR = 150 V -di F /dt = 200 A/µs 275 550 W A TVJ = 125 °C 9 A TVJ = 25 °C 35 ns TVJ = 125 °C 65 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPG60I300HA Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 175 °C -55 150 °C 150 °C 6 Weight MD mounting torque FC mounting force with clip Product Marking 0.8 1.2 Nm 20 120 N Part description D P G 60 I 300 HA IXYS Logo g = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Single Diode Reverse Voltage [V] TO-247AD (2) XXXXXXXXX Part Number Date Code yywwZ 1234 Lot# Location Ordering Standard Ordering Number DPG60I300HA Similar Part DPG60IM300PC Equivalent Circuits for Simulation I V0 R0 Marking on Product DPG60I300HA Package TO-263AB (D2Pak) (2) * on die level Delivery Mode Tube Code No. 585818 Voltage class 300 T VJ = 175°C Fast Diode V 0 max threshold voltage 0.69 V R0 max slope resistance * 3.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPG60I300HA Outlines TO-247 A E A2 D2 Ø P1 ØP S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 2x b e C A1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.430 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 10.92 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPG60I300HA Fast Diode 120 0.7 100 0.6 20 18 IF = 120 A 60 A 30 A 80 0.5 IF 14 IRM Qrr 60 [A] 12 0.4 TVJ = 150°C 40 [A] 10 [μC] 8 0.3 20 TVJ = 125°C VR = 200 V 25°C 0.4 0.8 1.2 1.6 4 0 2.0 VF [V] Fig. 1 Forward current IF versus VF 200 400 600 0 -diF /dt [A/μs] Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt 1.4 1000 TVJ = 125°C VR = 200 V 1.2 70 800 tfr trr 60 IF = 120 A 60 A 30 A 50 Qrr 0.2 0 40 40 80 120 160 9 8 700 7 600 6 500 5 400 4 300 3 200 400 VFR [V] 600 0 -diF /dt [A/μs] 200 400 2 600 -diF /dt [A/μs] Fig. 5 Typ. reverse recov. time trr versus -diF /dt Fig. 4 Typ. dynamic parameters Qrr, IRM versus TVJ Fig. 6 Typ. forward recovery voltage VFR & time tfr versus diF /dt 1.0 14 IF = 120 A 12 60 A 30 A 10 Erec 10 VFR 200 0 TVJ [°C] 16 600 [ns] [ns] 0.6 IRM 400 TVJ = 125°C VR = 200 V IF = 60 A tfr 900 1.0 0.4 200 -diF /dt [A/μs] Fig. 3 Typ. reverse recov. current IRM versus -diF /dt 80 Kf 0.8 TVJ = 125°C VR = 200 V 6 0.2 0.0 IF = 120 A 60 A 30 A 16 ZthJC 8 [K/W] [μJ] 6 4 TVJ = 125°C VR = 200 V 2 0 200 400 600 0.1 10 0 -diF /dt [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 10 1 10 2 10 3 10 4 t [ms] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c