DPG60C300QB

DPG60C300QB HiPerFRED² VRRM = I FAV = 2x 30 A t rr = 35 ns 300 V High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG60C300QB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-3P ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline compatible with TO-247 ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPG60C300QB Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 300 V 300 V VR = 300 V TVJ = 25°C 1 µA VR = 300 V TVJ = 150°C 0.1 mA IF = 30 A TVJ = 25°C 1.34 V IF = 60 A 1.63 V IF = 30 A 1.06 V IF = 60 A TVJ = 150 °C TC = 140 °C rectangular 1.39 V T VJ = 175 °C 30 A TVJ = 175 °C 0.70 V 10.5 mΩ d = 0.5 for power loss calculation only 0.95 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 150 V f = 1 MHz TVJ = 25°C 50 pF TVJ = 25 °C 3 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.3 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 30 A; VR = 200 V -di F /dt = 200 A/µs 160 360 W A TVJ = 125 °C 7 A TVJ = 25 °C 35 ns TVJ = 125 °C 55 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPG60C300QB Package Ratings TO-3P Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 50 Unit A -55 175 °C -55 150 °C 150 °C 1) 5 Weight MD mounting torque FC mounting force with clip Product Marking Logo Part Number Date Code Lot# g 0.8 1.2 Nm 20 120 N Part description D P G 60 C 300 QB IXYS yywwZ = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-3P (3) 1234 Location Ordering Standard Ordering Number DPG60C300QB Similar Part DPG60C300HB DPG60C300HJ DPG60C300PC DPF60C300HB Package TO-247AD (3) ISOPLUS247 (3) TO-263AB (D2Pak) (2) TO-247AD (3) DPG80C300HB TO-247AD (3) Equivalent Circuits for Simulation I V0 R0 Marking on Product DPG60C300QB * on die level Delivery Mode Tube Code No. 501894 Voltage class 300 300 300 300 300 T VJ = 175°C Fast Diode V 0 max threshold voltage 0.7 V R0 max slope resistance * 7.9 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPG60C300QB Outlines TO-3P 1 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPG60C300QB Fast Diode 16 80 70 0.4 14 IF = 60 A 30 A 15 A 60 50 IF TVJ = 150°C Qrr 40 [A] IF = 60 A 30 A 15 A 12 0.3 IRM 10 8 30 [A] [μC] 0.2 20 6 25°C TVJ = 125°C VR = 200 V 10 0.1 0.0 0.4 0.8 1.2 1.6 2 0 2.0 VF [V] Fig. 1 Forward current IF versus VF 200 400 600 0 70 400 600 TVJ = 125°C VR = 200 V 1.2 200 600 -diF /dt [A/μs] Fig. 3 Typ. reverse recov. current IRM versus -diF /dt -diF /dt [A/μs] Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt 1.4 TVJ = 125°C VR = 200 V 4 VFR tfr 60 500 50 400 12 10 1.0 Kf 0.8 tfr IF = 60 A 30 A 40 15 A [ns] trr 0.6 IRM [ns] 30 0.4 8 TVJ = 125°C VR = 200 V IF = 30 A 300 200 VFR 6 [V] 4 Qrr 0.2 20 0 40 80 120 160 100 0 400 600 0 -diF /dt [A/μs] TVJ [°C] Fig. 4 Typ. dynamic parameters Qrr, IRM versus TVJ 16 200 2 600 400 -diF /dt [A/μs] Fig. 6 Typ. forward recov. voltage VFR Fig. 5 Typ. reverse recov. time trr versus -diF /dt VFR & time tfr versus diF /dt 1.0 TVJ = 125°C 14 VR = 200 V 0.8 12 10 Erec 200 8 IF = 15 A ZthJC 30 A 60 A [K/W] 0.6 0.4 [μJ] 6 Rthi [K/W] 0.1311 0.1377 0.3468 0.2394 0.095 4 0.2 2 0.0 0 200 400 600 -diF /dt [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 1 10 100 1000 ti [s] 0.0018 0.002 0.012 0.07 0.345 10000 t [ms] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c