74AHC3GU04DC

74AHC3GU04 Inverter Rev. 04 — 7 January 2010 Product data sheet 1. General description The 74AHC3GU04 is a high-speed Si-gate CMOS device. This device provides three inverter gates with unbuffered outputs. 2. Features Symmetrical output impedance High noise immunity ESD protection: HBM JESD22-A114F exceeds 2 000 V MM JESD22-A115-A exceeds 200 V CDM JESD22-C101D exceeds 1 000 V Low power dissipation Balanced propagation delays Multiple package options Specified from −40 °C to +85 °C and from −40 °C to +125 °C 3. Ordering information Table 1. Ordering information Package Temperature range 74AHC3GU04DP 74AHC3GU04DC 74AHC3GU04GD −40 °C to +125 °C −40 °C to +125 °C −40 °C to +125 °C Name TSSOP8 VSSOP8 XSON8U Description plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm Version SOT505-2 Type number plastic very thin shrink small outline package; 8 leads; SOT765-1 body width 2.3 mm plastic extremely thin small outline package; no leads; SOT996-2 8 terminals; UTLP based; body 3 × 2 × 0.5 mm NXP Semiconductors 74AHC3GU04 Inverter 4. Marking Table 2. Marking codes Marking code AU4 AU4 AU4 Type number 74AHC3GU04DP 74AHC3GU04DC 74AHC3GU04GD 5. Functional diagram 1 1 7 1 1A 1Y 7 3 1 5 3 2A 2Y 5 1 6 3A 3Y 2 6 2 A Y mna045 mna720 mna721 Fig 1. Logic symbol Fig 2. IEC logic symbol Fig 3. Logic diagram (one gate) 6. Pinning information 6.1 Pinning 74AHC3GU04 1A 1 2 3 4 8 7 6 5 VCC 1Y 3A 2Y 74AHC3GU04 1A 3Y 2A GND 1 2 3 4 001aaj517 3Y 8 7 6 5 VCC 1Y 3A 2Y 2A GND 001aaj518 Transparent top view Fig 4. Pin configuration SOT505-2 (TSSOP8) and SOT765-1 (VSSOP8) Fig 5. Pin configuration SOT996-2 (XSON8U) 74AHC3GU04_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 7 January 2010 2 of 15 NXP Semiconductors 74AHC3GU04 Inverter 6.2 Pin description Table 3. Symbol 1A, 2A, 3A GND 1Y, 2Y, 3Y VCC Pin description Pin 1, 3, 6 4 7, 5, 2 8 Description data input ground (0 V) data output supply voltage 7. Functional description Table 4. Function table H = HIGH voltage level; L = LOW voltage level Input A L H Output Y H L 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol VCC VI IIK IOK IO ICC IGND Tstg Ptot [1] [2] Parameter supply voltage input voltage input clamping current output clamping current output current supply current ground current storage temperature total power dissipation Conditions Min −0.5 −0.5 Max +7.0 +7.0 ±20 ±25 75 +150 250 Unit V V mA mA mA mA mA °C mW VI < −0.5 V VO < −0.5 V or VO > VCC + 0.5 V −0.5 V < VO < VCC + 0.5 V [1] [1] −20 −75 −65 Tamb = −40 °C to +125 °C [2] - The input and output voltage ratings may be exceeded if the input and output current ratings are observed. For TSSOP8 package: above 55 °C the value of Ptot derates linearly with 2.5 mW/K. For VSSOP8 package: above 110 °C the value of Ptot derates linearly with 8 mW/K. For XSON8U package: above 45 °C the value of Ptot derates linearly with 2.4 mW/K. 74AHC3GU04_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 7 January 2010 3 of 15 NXP Semiconductors 74AHC3GU04 Inverter 9. Recommended operating conditions Table 6. Recommended operating conditions Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC VI VO Tamb Δt/ΔV supply voltage input voltage output voltage ambient temperature input transition rise and fall rate VCC = 3.3 V ± 0.3 V VCC = 5.0 V ± 0.5 V Conditions Min 2.0 0 0 −40 Typ 5.0 +25 Max 5.5 5.5 VCC +125 100 20 Unit V V V °C ns/V ns/V 10. Static characteristics Table 7. Static characteristics Voltages are referenced to GND (ground = 0 V). Symbol VIH Parameter HIGH-level input voltage Conditions Min VCC = 2.0 V VCC = 3.0 V VCC = 5.5 V VIL LOW-level input voltage VCC = 2.0 V VCC = 3.0 V VCC = 5.5 V VOH HIGH-level VI = VIH or VIL output voltage IO = −50 μA; VCC = 2.0 V IO = −50 μA; VCC = 3.0 V IO = −50 μA; VCC = 4.5 V IO = −4.0 mA; VCC = 3.0 V IO = −8.0 mA; VCC = 4.5 V VOL LOW-level VI = VIH or VIL output voltage IO = 50 μA; VCC = 2.0 V IO = 50 μA; VCC = 3.0 V IO = 50 μA; VCC = 4.5 V IO = 4.0 mA; VCC = 3.0 V IO = 8.0 mA; VCC = 4.5 V II ICC CI input leakage current VI = 5.5 V or GND; VCC = 0 V to 5.5 V 1.7 2.4 4.4 1.9 2.9 4.4 2.58 3.94 25 °C Typ 2.0 3.0 4.5 0 0 0 3.0 Max 0.3 0.6 1.1 0.1 0.1 0.1 0.36 0.36 0.1 1.0 10 −40 °C to +85 °C Min 1.7 2.4 4.4 1.9 2.9 4.4 2.48 3.8 Max 0.3 0.6 1.1 0.1 0.1 0.1 0.44 0.44 1.0 10 10 −40 °C to +125 °C Unit Min 1.7 2.4 4.4 1.9 2.9 4.4 2.40 3.70 Max 0.3 0.6 1.1 0.1 0.1 0.1 0.55 0.55 2.0 40 10 V V V V V V V V V V V V V V V V μA μA pF supply current VI = VCC or GND; IO = 0 A; VCC = 5.5 V input capacitance 74AHC3GU04_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 7 January 2010 4 of 15 NXP Semiconductors 74AHC3GU04 Inverter 11. Dynamic characteristics Table 8. Dynamic characteristics GND = 0 V; For test circuit see Figure 7. Symbol tpd Parameter propagation delay Conditions Min nA to nY; see Figure 6 VCC = 3.0 V to 3.6 V CL = 15 pF CL = 50 pF VCC = 4.5 V to 5.5 V CL = 15 pF CL = 50 pF CPD power dissipation capacitance per buffer; VI = GND to VCC [4] [3] [1] [2] 25 °C Typ Max −40 °C to +85 °C −40 °C to +125 °C Unit Min Max Min Max - 3.0 4.3 2.5 3.5 4 7.1 10.6 5.5 7.0 - 1.0 1.0 1.0 1.0 - 8.5 12.0 6.0 8.0 - 1.0 1.0 1.0 1.0 - 10.0 13.5 7.0 9.0 - ns ns ns ns pF [1] [2] [3] [4] tpd is the same as tPLH and tPHL. Typical values are measured at VCC = 3.3 V. Typical values are measured at VCC = 5.0 V. CPD is used to determine the dynamic power dissipation (PD in μW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; Σ(CL × VCC2 × fo) = sum of the outputs. 12. Waveforms VI nA input GND t PHL VOH nY output VOL VM VM mna344 VM VM t PLH Fig 6. Table 9. Type The input (nA) to output (nY) propagation delays. Measurement points Input VM 0.5VCC Output VM 0.5VCC 74AHC3GU04 74AHC3GU04_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 7 January 2010 5 of 15 NXP Semiconductors 74AHC3GU04 Inverter VI negative pulse 0V tW 90 % VM 10 % tf tr tr tf 90 % VM 10 % tW VM VM VI positive pulse 0V VCC VCC G VI VO RL S1 DUT RT CL open 001aad983 Test data is given in Table 10. Definitions test circuit: RT = Termination resistance should be equal to output impedance Zo of the pulse generator. CL = Load capacitance including jig and probe capacitance. RL = Load resistance. S1 = Test selection switch. Fig 7. Table 10. Type Test circuit for measuring switching times Test data Input VI tr, tf ≤ 3 ns VCC Load CL 15 pF, 50 pF RL 1 kΩ S1 position tPHL, tPLH open tPZH, tPHZ GND tPZL, tPLZ VCC 74AHC3GU04 74AHC3GU04_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 7 January 2010 6 of 15 NXP Semiconductors 74AHC3GU04 Inverter 13. Typical transfer characteristics mna397 mna398 2.0 VO (V) 1.6 VO 1.0 ICC (mA) 0.8 3.0 VO (V) VO 10 ICC (mA) 8 1.2 0.6 1.5 6 0.8 0.4 4 ID (drain current) 0.4 ID (drain current) 0.2 2 0 0 0.4 0.8 1.2 1.6 VI (V) 0 2.0 0 0 1 2 3 0 VI (V) Fig 8. VCC = 2.0 V; IO = 0 A Fig 9. VCC = 3.0 V; IO = 0 A mna399 6 VO (V) VO 50 ICC (mA) 40 Rbias = 560 kΩ VCC 30 3 20 ID (drain current) 10 VI (f = 1 kHz) 0.47 μF input output 100 μF A IO GND mna050 0 0 2 4 VI (V) 6 0 Fig 10. VCC = 5.5 V; IO = 0 A Fig 11. Test set-up for measuring forward transconductance gfs = ΔIO/ΔVI at VO is constant 74AHC3GU04_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 7 January 2010 7 of 15 NXP Semiconductors 74AHC3GU04 Inverter 40 gfs (mA/V) 30 mna400 20 10 0 0 2 4 VCC (V) 6 Fig 12. Typical forward transconductance gfs as a function of the supply voltage at Tamb = 25 °C 14. Application information Some applications are: • Linear amplifier (see Figure 13) • In crystal oscillator design (see Figure 14) Remark: All values given are typical unless otherwise specified. R2 R1 VCC 1 μF R1 R2 U04 ZL U04 C1 C2 out mna052 mna053 Maximum Vo(p-p) = VCC − 1.5 V centered at 0.5 × VCC. C1 = 47 pF (typ.) C2 = 22 pF (typ.) R1 = 1 MΩ to 10 MΩ (typ.) R2 optimum value depends on the frequency and required stability against changes in VCC or average minimum ICC (ICC is typically 2 mA at VCC = 3 V and f = 1 MHz). G ol G v = – --------------------------------------R1 1 + ------ ( 1 + G ol ) R2 Gol = open loop gain Gv = voltage gain R1 ≥ 3 kΩ, R2 ≤ 1 MΩ ZL > 10 kΩ; Gol = 20 (typ.) Typical unity gain bandwidth product is 5 MHz. Fig 13. Used as a linear amplifier Fig 14. Crystal oscillator configuration 74AHC3GU04_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 7 January 2010 8 of 15 NXP Semiconductors 74AHC3GU04 Inverter Table 11. External components for resonator (f < 1 MHz) All values given are typical and must be used as an initial set-up. Frequency 10 kHz to 15.9 kHz 16 kHz to 24.9 kHz 25 kHz to 54.9 kHz 55 kHz to 129.9 kHz 130 kHz to 199.9 kHz 200 kHz to 349.9 kHz 350 kHz to 600 kHz Table 12. Frequency 3 kHz 6 kHz 10 kHz 14 kHz >14 kHz Optimum value for R2 R2 2.0 kΩ 8.0 kΩ 1.0 kΩ 4.7 kΩ 0.5 kΩ 2.0 kΩ 0.5 kΩ 1.0 kΩ Optimum for minimum required ICC minimum influence due to change in VCC minimum required ICC minimum influence by VCC minimum required ICC minimum influence by VCC minimum required ICC minimum influence by VCC replace R2 by C3 with a typical value of 35 pF R1 22 MΩ 22 MΩ 22 MΩ 22 MΩ 22 MΩ 22 MΩ 22 MΩ R2 220 kΩ 220 kΩ 100 kΩ 100 kΩ 47 kΩ 47 kΩ 47 kΩ C1 56 pF 56 pF 56 pF 47 pF 47 pF 47 pF 47 pF C2 20 pF 10 pF 10 pF 5 pF 5 pF 5 pF 5 pF 74AHC3GU04_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 7 January 2010 9 of 15 NXP Semiconductors 74AHC3GU04 Inverter 15. Package outline TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm SOT505-2 D E A X c y HE vMA Z 8 5 A pin 1 index A2 A1 (A3) Lp L θ 1 e bp 4 wM detail X 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.1 A1 0.15 0.00 A2 0.95 0.75 A3 0.25 bp 0.38 0.22 c 0.18 0.08 D(1) 3.1 2.9 E(1) 3.1 2.9 e 0.65 HE 4.1 3.9 L 0.5 Lp 0.47 0.33 v 0.2 w 0.13 y 0.1 Z(1) 0.70 0.35 θ 8° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT505-2 REFERENCES IEC JEDEC --JEITA EUROPEAN PROJECTION ISSUE DATE 02-01-16 Fig 15. Package outline SOT505-2 (TSSOP8) 74AHC3GU04_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 7 January 2010 10 of 15 NXP Semiconductors 74AHC3GU04 Inverter VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2.3 mm SOT765-1 D E A X c y HE vMA Z 8 5 Q A pin 1 index A2 A1 (A3) θ Lp L 1 e bp 4 wM detail X 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1 A1 0.15 0.00 A2 0.85 0.60 A3 0.12 bp 0.27 0.17 c 0.23 0.08 D(1) 2.1 1.9 E(2) 2.4 2.2 e 0.5 HE 3.2 3.0 L 0.4 Lp 0.40 0.15 Q 0.21 0.19 v 0.2 w 0.13 y 0.1 Z(1) 0.4 0.1 θ 8° 0° Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT765-1 REFERENCES IEC JEDEC MO-187 JEITA EUROPEAN PROJECTION ISSUE DATE 02-06-07 Fig 16. Package outline SOT765-1 (VSSOP8) 74AHC3GU04_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 7 January 2010 11 of 15 NXP Semiconductors 74AHC3GU04 Inverter XSON8U: plastic extremely thin small outline package; no leads; 8 terminals; UTLP based; body 3 x 2 x 0.5 mm SOT996-2 D B A E A A1 detail X terminal 1 index area e1 L1 1 e b 4 v w M M CAB C C y1 C y L2 L 8 5 X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A max 0.5 A1 0.05 0.00 b 0.35 0.15 D 2.1 1.9 E 3.1 2.9 e 0.5 e1 1.5 L 0.5 0.3 L1 0.15 0.05 L2 0.6 0.4 v 0.1 w 0.05 y 0.05 y1 0.1 OUTLINE VERSION SOT996-2 REFERENCES IEC --JEDEC JEITA --- EUROPEAN PROJECTION ISSUE DATE 07-12-18 07-12-21 Fig 17. Package outline SOT996-2 (XSON8U) 74AHC3GU04_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 7 January 2010 12 of 15 NXP Semiconductors 74AHC3GU04 Inverter 16. Abbreviations Table 13. Acronym CDM CMOS DUT ESD HBM MM Abbreviations Description Charged Device Model Complementary Metal-Oxide Semiconductor Device Under Test ElectroStatic Discharge Human Body Model Machine Model 17. Revision history Table 14. Revision history Release date 20100107 Data sheet status Product data sheet Product data sheet Product specification Product specification Change notice Supersedes 74AHC3GU04_3 74AHC3GU04_2 74AHC3GU04_1 Document ID 74AHC3GU04_4 74AHC3GU04_3 74AHC3GU04_2 74AHC3GU04_1 • Marking code for 74AHC3GU04DP package changed from AU04 to AU4 20090126 20040923 20040305 74AHC3GU04_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 7 January 2010 13 of 15 NXP Semiconductors 74AHC3GU04 Inverter 18. Legal information 18.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 18.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 18.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 18.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 19. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com 74AHC3GU04_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 7 January 2010 14 of 15 NXP Semiconductors 74AHC3GU04 Inverter 20. Contents 1 2 3 4 5 6 6.1 6.2 7 8 9 10 11 12 13 14 15 16 17 18 18.1 18.2 18.3 18.4 19 20 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 1 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Recommended operating conditions. . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4 Dynamic characteristics . . . . . . . . . . . . . . . . . . 5 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Typical transfer characteristics . . . . . . . . . . . . 7 Application information. . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 7 January 2010 Document identifier: 74AHC3GU04_4