MBR40L45CTG

MBR40L45CTG, NRVBB40L45CTT4G Switch-mode Power Rectifier 45 V, 40 A www.onsemi.com Features and Benefits • • • • • • • • SCHOTTKY BARRIER RECTIFIERS 40 AMPERES, 45 VOLTS Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 40 A Total (20 A Per Diode Leg) Guard−Ring for Stress Protection NRVBB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant 1 2, 4 3 MARKING DIAGRAMS 4 Applications • Power Supply − Output Rectification • Power Management • Instrumentation TO−220 CASE 221A STYLE 6 1 Mechanical Characteristics: • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight (Approximately): 1.9 Grams (TO−220) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped 50 Units Per Plastic Tube for TO−220 2 AYWW B40L45G AKA 3 4 D2PAK 3 CASE 418B STYLE 3 1 AY WW B40L45G AKA 3 B40L45 A Y WW G AKA = Device Code = Assembly Location = Year = Work Week = Pb−Free Device = Polarity Designator ORDERING INFORMATION Package Shipping† MBR40L45CTG TO−220 (Pb−Free) 50 Units/Rail NRVBB40L45CTT4G D2PAK 3 (Pb−Free) 800 /Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 3 1 Publication Order Number: MBR40L45CT/D MBR40L45CTG, NRVBB40L45CTT4G MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR) TC = 145°C IF(AV) 20 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) IFRM 40 A Non-repetitive Peak Surge Current (Surge applied at rated load conditions half-wave, single phase, 60 Hz) IFSM 200 A Operating Junction Temperature (Note 1) TJ −65 to +175 °C Storage Temperature Tstg −65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms > 400 > 8000 V ESD Ratings: Machine Model = C Human Body Model = 3B Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value RqJC RqJA 1.9 72.9 Symbol Value Unit °C/W Maximum Thermal Resistance Junction−to−Case Junction−to−Ambient ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Maximum Instantaneous Forward Voltage (Note 2) (IF = 20 A, TC = 25°C) (IF = 20 A, TC = 125°C) (IF = 40 A, TC = 25°C) (IF = 40 A, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR Unit V 0.50 0.48 0.63 0.68 mA 1.2 275 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%. www.onsemi.com 2 MBR40L45CTG, NRVBB40L45CTT4G TYPICAL CHARACTERISTICS 1000 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 1000 100 100 150°C 25°C 10 125°C 1 150°C 25°C 10 125°C 1 0.1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, MAXIMUM FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.6 1E+00 IR, MAXIMUM REVERSE CURRENT (A) 1E+00 IR, REVERSE CURRENT (A) 150°C 1E−01 150°C 1E−01 125°C 1E−02 125°C 1E−02 1E−03 1E−03 1E−04 25°C 1E−04 25°C 1E−05 1E−05 5 10 15 20 25 30 35 40 45 50 0 5 10 VR, REVERSE VOLTAGE (V) 15 20 dc 40 35 Square Wave 30 25 20 15 10 5 0 80 90 30 35 40 Figure 4. Maximum Reverse Current 50 45 25 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current IF, AVERAGE FORWARD CURRENT (A) 0 100 110 120 130 140 150 160 170 180 TC, CASE TEMPERATURE (°C) Figure 5. Current Derating for MBR40L45CTG www.onsemi.com 3 45 50 MBR40L45CTG, NRVBB40L45CTT4G 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 10000 Square Wave dc 25°C 1000 100 0 R(t) TRANSIENT THERMAL RESISTANCE C, CAPACITANCE (pF) PFO, AVERAGE POWER DISSIPATION (W) TYPICAL CHARACTERISTICS 5 10 15 20 25 30 35 0 40 5 10 15 20 25 35 30 Io, AVERAGE FORWARD CURRENT (A) VR, REVERSE VOLTAGE (V) Figure 6. Forward Power Dissipation Figure 7. Capacitance 40 45 10 1 0.1 D = 0.5 0.2 0.1 0.05 0.01 0.01 P(pk) t1 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 T1, TIME (sec) Figure 8. Thermal Response Junction−to−Case for MBR40L45CTG www.onsemi.com 4 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE L DATE 17 FEB 2015 SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E −B− V W 4 1 2 A S 3 −T− SEATING PLANE K W J G D DIM A B C D E F G H J K L M N P R S V H 3 PL 0.13 (0.005) M T B M VARIABLE CONFIGURATION ZONE N R P L M STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 U L M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 5: STYLE 6: PIN 1. CATHODE PIN 1. NO CONNECT 2. ANODE 2. CATHODE 3. CATHODE 3. ANODE 4. ANODE 4. CATHODE MARKING INFORMATION AND FOOTPRINT ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42761B D2PAK 3 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com D2PAK 3 CASE 418B−04 ISSUE L DATE 17 FEB 2015 GENERIC MARKING DIAGRAM* xx xxxxxxxxx AWLYWWG xxxxxxxxG AYWW AYWW xxxxxxxxG AKA IC Standard Rectifier xx A WL Y WW G AKA = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package = Polarity Indicator *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42761B D2PAK 3 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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