MBR60L45CTG

MBR60L45CTG, MBR60L45WTG Switch‐mode Power Rectifier 45 V, 60 A www.onsemi.com Features and Benefits • • • • • • • SCHOTTKY BARRIER RECTIFIERS 60 AMPERES, 45 VOLTS Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 60 A Total (30 A Per Diode Leg) Guard−Ring for Stress Protection These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 2, 4 3 MARKING DIAGRAMS 4 Applications • Power Supply − Output Rectification • Power Management • Instrumentation TO−220 CASE 221A STYLE 6 Mechanical Characteristics: 1 • Case: Epoxy, Molded • Epoxy Meets UL 94 V−0 @ 0.125 in • Weight (Approximately): 1.9 Grams (TO−220) 2 AYWW B60L45G AKA 3 Weight (Approximately): 4.3 Grams (TO−247) • Finish: All External Surfaces Corrosion Resistant and Terminal • • Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped 50 Units Per Plastic Tube for TO−220 and 30 Units Per Plastic Tube for TO−247 AYWWG B60L45 AKA 1 2 TO−247 CASE 340AL 3 B60L45 A Y WW AKA G = Device Code = Assembly Location = Year = Work Week = Polarity Designator = Pb−Free Device ORDERING INFORMATION Device © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 4 1 Package Shipping MBR60L45CTG TO−220 (Pb−Free) 50 Units/Rail MBR60L45WTG TO−247 (Pb−Free) 30 Units/Rail Publication Order Number: MBR60L45CT/D MBR60L45CTG, MBR60L45WTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR) TC = 145°C for MBR60L45CTG (Rated VR) TC = 165°C for MBR60L45WTG IF(AV) 30 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) IFRM 60 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 200 A Operating Junction Temperature (Note 1) TJ −65 to +175 °C Storage Temperature Tstg −65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms > 400 > 8000 V ESD Ratings: Machine Model = C Human Body Model = 3B Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit °C/W Maximum Thermal Resistance (MBR60L45CTG) (MBR60L45WTG) − Junction−to−Case − Junction−to−Case RqJC RqJC 1.9 0.59 Symbol Value ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Maximum Instantaneous Forward Voltage (Note 2) (IF = 30 A, TC = 25°C) (IF = 30 A, TC = 125°C) (IF = 60 A, TC = 25°C) (IF = 60 A, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR Unit V 0.55 0.53 0.73 0.76 mA 1.2 275 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 MBR60L45CTG, MBR60L45WTG TYPICAL CHARACTERISTICS 1000 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 1000 100 100 150°C 25°C 10 125°C 1 0.1 150°C 125°C 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.2 0.6 0.8 1.0 1.2 1.4 VF, MAXIMUM FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.6 1E+00 IR, MAXIMUM REVERSE CURRENT (A) IR, REVERSE CURRENT (A) 150°C 1E−01 150°C 1E−01 125°C 1E−02 125°C 1E−02 1E−03 1E−03 1E−04 25°C 1E−04 25°C 1E−05 1E−05 0 5 10 15 20 25 30 35 40 45 50 0 5 IF, AVERAGE FORWARD CURRENT (A) dc 40 Square Wave 30 25 20 15 10 5 0 100 110 25 30 35 40 45 50 Figure 4. Maximum Reverse Current 50 80 90 20 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current 45 15 10 VR, REVERSE VOLTAGE (V) IF, AVERAGE FORWARD CURRENT (A) 0.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1E+00 35 25°C 10 120 130 140 150 160 170 180 50 45 dc 40 Square Wave 35 30 25 20 15 10 5 0 80 90 100 110 120 130 140 150 160 170 180 TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C) Figure 5. Current Derating for MBR60L45CTG Figure 6. Current Derating for MBR60L45WTG www.onsemi.com 3 MBR60L45CTG, MBR60L45WTG 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 10000 Square Wave dc 25°C 1000 100 0 R(t) TRANSIENT THERMAL RESISTANCE C, CAPACITANCE (pF) PFO, AVERAGE POWER DISSIPATION (W) TYPICAL CHARACTERISTICS 5 10 15 20 25 30 35 0 40 5 10 15 20 25 35 30 Io, AVERAGE FORWARD CURRENT (A) VR, REVERSE VOLTAGE (V) Figure 7. Forward Power Dissipation Figure 8. Capacitance 40 45 10 1 0.1 D = 0.5 0.2 0.1 0.05 0.01 0.01 P(pk) t1 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 T1, TIME (sec) R(t) TRANSIENT THERMAL RESISTANCE Figure 9. Thermal Response Junction−to−Case for MBR60L45CTG 1 D = 0.5 0.2 0.1 0.1 0.05 0.01 P(pk) 0.01 t1 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 T1, TIME (sec) Figure 10. Thermal Response Junction−to−Case for MBR60L45WTG www.onsemi.com 4 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE D DATE 17 MAR 2017 SCALE 1:1 E E2/2 D SEATING PLANE Q 2X 2 M B A M NOTE 6 S NOTE 3 1 0.635 P A E2 NOTE 4 4 DIM A A1 b b2 b4 c D E E2 e F L L1 P Q S 3 L1 F NOTE 5 L 2X B A NOTE 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. b2 c b4 3X e b 0.25 A1 NOTE 7 M B A M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.07 1.33 1.65 2.35 2.60 3.40 0.45 0.68 20.80 21.34 15.50 16.25 4.32 5.49 5.45 BSC 2.655 --19.80 20.80 3.81 4.32 3.55 3.65 5.40 6.20 6.15 BSC GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON16119F TO−247 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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