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MC74HCT245A
Octal 3-State Noninverting
Bus Transceiver with LSTTL
Compatible Inputs
High−Performance Silicon−Gate CMOS
The MC74HCT245A is identical in pinout to the LS245. This
device may be used as a level converter for interfacing TTL or NMOS
outputs to High Speed CMOS inputs.
The MC74HCT245A is a 3−state noninverting transceiver that is
used for 2−way asynchronous communication between data buses.
The device has an active−low Output Enable pin, which is used to
place the I/O ports into high−impedance states. The Direction control
determines whether data flows from A to B or from B to A.
Features
•
•
•
•
•
•
•
•
Output Drive Capability: 15 LSTTL Loads
TTL/NMOS Compatible Input Levels
Outputs Directly Interface to CMOS, NMOS and TTL
Operating Voltage Range: 4.5 V to 5.5 V
Low Input Current: 1.0 mA
In Compliance with the Requirements Defined by JEDEC Standard
No. 7 A
Chip Complexity: 304 FETs or 76 Equivalent Gates
These Devices are Pb−Free and are RoHS Compliant
A1
A2
A3
A
DATA
PORT
A4
A5
A6
A7
A8
DIRECTION
OUTPUT ENABLE
2
18
3
17
4
16
5
15
6
14
7
13
8
12
9
11
1
1
SOIC−20W
DW SUFFIX
CASE 751D
1
TSSOP−20
DT SUFFIX
CASE 948E
1
B2
SOEIAJ−20
F SUFFIX
CASE 967
B3
B4
B5
B
DATA
PORT
1
B6
B7
PIN ASSIGNMENT
B8
Figure 1. Logic Diagram
Design Criteria
PDIP−20
N SUFFIX
CASE 738
B1
PIN 20 = VCC
PIN 10 = GND
19
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DIRECTION
1
20
VCC
A1
2
19
OUTPUT ENABLE
A2
3
18
B1
4
17
B2
Value
Units
A3
Internal Gate Count*
76
ea
A4
5
16
B3
Internal Gate Propagation Delay
1.0
ns
A5
6
15
B4
5.0
mW
0.005
pJ
A6
7
14
B5
A7
8
13
B6
FUNCTION TABLE
A8
9
12
B7
Control Inputs
GND
10
11
B8
Internal Gate Power Dissipation
Speed Power Product
*Equivalent to a two−input NAND gate.
Output Enable
Direction
L
L
Data Transmitted from Bus B to Bus A
L
H
Data Transmitted from Bus A to Bus B
X
Buses Isolated (High−Impedance State)
H
X = Don’t Care
Operation
© Semiconductor Components Industries, LLC, 2011
May, 2011 − Rev. 12
1
ORDERING INFORMATION
See detailed ordering, shipping information, and marking
information in the package dimensions section on page 6 of
this data sheet.
Publication Order Number:
MC74HCT245A/D
MC74HCT245A
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MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
– 0.5 to + 7.0
V
VCC
DC Supply Voltage (Referenced to GND)
Vin
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Iin
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 35
mA
ICC
DC Supply Current, VCC and GND Pins
± 75
mA
PD
Power Dissipation in Still Air, PDIP†
SOIC Package†
TSSOP Package†
750
500
450
mW
Tstg
Storage Temperature
– 65 to + 150
_C
TL
Lead Temperature, 1 mm from Case for 10 Secs
(PDIP, SOIC, SSOP or TSSOP Package)
_C
260
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
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RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Vin, Vout
Parameter
Min
Max
Unit
4.5
5.5
V
0
VCC
V
– 55
+ 125
_C
0
500
ns
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage
(Referenced to GND)
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time (Figure 1)
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2
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
MC74HCT245A
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ÎÎÎÎ
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ÎÎ
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DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
VCC
V
– 55 to
25_C
v 85_C
v 125_C
Unit
VIH
Minimum High−Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| v 20 mA
4.5
5.5
2.0
2.0
2.0
2.0
2.0
2.0
V
VIL
Maximum Low−Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| v 20 mA
4.5
5.5
0.8
0.8
0.8
0.8
0.8
0.8
V
VOH
Minimum High−Level Output
Voltage
Vin = VIH or VIL
|Iout| v 20 mA
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V
Vin = VIH or VIL
|Iout| v 6.0 mA
4.5
3.98
3.84
3.7
Vin = VIH or VIL
|Iout| v 20 mA
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
Vin = VIH or VIL
|Iout| v 6.0 mA
4.5
0.26
0.33
0.4
VOL
Maximum Low−Level Output
Voltage
V
Iin
Maximum Input Leakage Current
Vin = VCC or GND, Pins 1 or 19
5.5
± 0.1
± 1.0
± 1.0
mA
ICC
Maximum Quiescent Supply Current
(per Package)
Vin = VCC or GND
Iout = 0 mA
5.5
4.0
40
160
mA
IOZ
Maximum Three−State
Leakage Current
Output in High−Impedance State
Vin = VIL or VIH
Vout = VCC or GND, I/O Pins
5.5
± 0.5
± 5.0
± 10
mA
Additional Quiescent Supply
Current
Vin = 2.4 V, Any One Input
Vin = VCC or GND, Other Inputs
lout = 0 mA
DICC
≥ −55_C
25_C to 125_C
2.9
2.4
5.5
mA
AC ELECTRICAL CHARACTERISTICS (VCC = 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6.0 ns)
Guaranteed Limit
Symbol
Parameter
– 55 to
25_C
v 85_C
v 125_C
Unit
tPLH,
tPHL
Maximum Propagation Delay, A to B or B to A
(Figures 2 and 4)
22
28
33
ns
tPLZ,
tPHZ
Maximum Propagation Delay, Direction or Output Enable to A or B
(Figures 3 and 5)
30
36
42
ns
tPZL,
tPZH
Maximum Propagation Delay, Output Enable to A or 8
(Figures 3 and 5)
30
36
42
ns
tTLH,
tTHL
Maximum Output Transition Time. any Output
(Figures 2 and 4)
12
15
18
ns
Cin
Maximum Input Capacitance (Pin 1 or 19)
10
10
10
pF
Cout
Maximum Three−State I/O Capacitance, (I/O in High−Impedance State)
15
15
15
pF
CPD
Power Dissipation Capacitance (Per Enabled Output)*
Typical @ 25°C, VCC = 5.0 V
97
* Used to determine the no−load dynamic power consumption: P D = CPD VCC
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3
2f
+ ICC VCC .
pF
MC74HCT245A
SWITCHING WAVEFORMS
tf
tr
INPUT
A OR B
3.0 V
2.7 V
1.3 V
0.3 V
GND
tPLH
tPHL
90%
1.3 V
10%
OUTPUT
B OR A
tTLH
tTHL
Figure 2.
3.0 V
DIRECTION
1.3 V
1.3 V
GND
3.0 V
OUTPUT
ENABLE
1.3 V
GND
tPZL
A OR B
HIGH
IMPEDANCE
1.3 V
tPZH
A OR B
tPLZ
tPHZ
1.3 V
10%
VOL
90%
VOH
HIGH
IMPEDANCE
Figure 3.
TEST POINT
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
OUTPUT
DEVICE
UNDER
TEST
CL*
1 kW
CL*
CONNECT TO VCC WHEN
TESTING tPLZ AND tPZL.
CONNECT TO GND WHEN
TESTING tPHZ AND tPZH.
*Includes all probe and jig capacitance
*Includes all probe and jig capacitance
Figure 4.
Figure 5. Test Circuit
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4
MC74HCT245A
A1
2
18
A2
3
17
A3
A4
B
DATA
PORT
OUTPUT ENABLE
B7
9
11
DIRECTION
B6
8
12
A8
B5
7
13
A7
B4
6
14
A6
B3
5
15
A5
B2
4
16
A
DATA
PORT
B1
1
19
Figure 6. Expanded Logic Diagram
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5
B8
MC74HCT245A
ORDERING INFORMATION
Package
Shipping†
MC74HCT245ANG
PDIP−20
(Pb−Free)
18 Units / Rail
MC74HCT245ADWG
SOIC−20
(Pb−Free)
38 Units / Rail
MC74HCT245ADWR2G
SOIC−20
(Pb−Free)
1000 / Tape & Reel
MC74HCT245ADTG
TSSOP−20*
75 Units / Rail
MC74HCT245ADTR2G
TSSOP−20*
2500 / Tape & Reel
MC74HCT245AFELG
SOEIAJ−20
(Pb−Free)
2000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*These packages are inherently Pb−Free.
MARKING DIAGRAMS
PDIP−20
SOIC−20W
20
20
HCT245A
AWLYYWWG
MC74HCT245AN
AWLYYWWG
1
1
TSSOP−20
SOEIAJ−20
20
20
HCT
245A
ALYWG
G
74HCT245A
AWLYWWG
1
1
A
= Assembly Location
WL, L
= Wafer Lot
YY, Y
= Year
WW, W = Work Week
G or G
= Pb−Free Package
(Note: Microdot may be in either location)
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6
MC74HCT245A
PACKAGE DIMENSIONS
PDIP−20
N SUFFIX
PLASTIC DIP PACKAGE
CASE 738−03
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
−A−
20
11
1
10
B
L
C
−T−
K
SEATING
PLANE
M
N
E
G
F
J
D
20 PL
20 PL
0.25 (0.010)
0.25 (0.010)
M
T A
M
T B
M
DIM
A
B
C
D
E
F
G
J
K
L
M
N
INCHES
MIN
MAX
1.010
1.070
0.240
0.260
0.150
0.180
0.015
0.022
0.050 BSC
0.050
0.070
0.100 BSC
0.008
0.015
0.110
0.140
0.300 BSC
0_
15 _
0.020
0.040
MILLIMETERS
MIN
MAX
25.66
27.17
6.10
6.60
3.81
4.57
0.39
0.55
1.27 BSC
1.27
1.77
2.54 BSC
0.21
0.38
2.80
3.55
7.62 BSC
0_
15_
0.51
1.01
M
SOIC−20W
DW SUFFIX
CASE 751D−05
ISSUE G
A
20
11
X 45 _
E
h
1
10
20X
B
B
0.25
M
T A
S
B
S
A
L
H
M
10X
0.25
NOTES:
1. DIMENSIONS ARE IN MILLIMETERS.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF B
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
q
B
M
D
18X
e
A1
SEATING
PLANE
C
T
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7
DIM
A
A1
B
C
D
E
e
H
h
L
q
MILLIMETERS
MIN
MAX
2.35
2.65
0.10
0.25
0.35
0.49
0.23
0.32
12.65
12.95
7.40
7.60
1.27 BSC
10.05
10.55
0.25
0.75
0.50
0.90
0_
7_
MC74HCT245A
PACKAGE DIMENSIONS
TSSOP−20
DT SUFFIX
CASE 948E−02
ISSUE C
20X
0.15 (0.006) T U
2X
L
K REF
0.10 (0.004)
S
L/2
20
M
T U
S
V
ÍÍÍÍ
ÍÍÍÍ
ÍÍÍÍ
K
K1
S
J J1
11
B
−U−
PIN 1
IDENT
1
SECTION N−N
0.25 (0.010)
N
10
M
0.15 (0.006) T U
S
N
A
−V−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION:
MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE
MOLD FLASH, PROTRUSIONS OR GATE
BURRS. MOLD FLASH OR GATE BURRS
SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION
SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
F
DETAIL E
−W−
C
G
D
H
DETAIL E
0.100 (0.004)
−T− SEATING
PLANE
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
SOLDERING FOOTPRINT
7.06
1
0.65
PITCH
16X
0.36
16X
1.26
DIMENSIONS: MILLIMETERS
http://onsemi.com
8
MILLIMETERS
MIN
MAX
6.40
6.60
4.30
4.50
--1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.27
0.37
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.252
0.260
0.169
0.177
--0.047
0.002
0.006
0.020
0.030
0.026 BSC
0.011
0.015
0.004
0.008
0.004
0.006
0.007
0.012
0.007
0.010
0.252 BSC
0_
8_
MC74HCT245A
PACKAGE DIMENSIONS
SOEIAJ−20
F SUFFIX
CASE 967−01
ISSUE A
20
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS D AND E DO NOT INCLUDE
MOLD FLASH OR PROTRUSIONS AND ARE
MEASURED AT THE PARTING LINE. MOLD FLASH
OR PROTRUSIONS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
5. THE LEAD WIDTH DIMENSION (b) DOES NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08 (0.003)
TOTAL IN EXCESS OF THE LEAD WIDTH
DIMENSION AT MAXIMUM MATERIAL CONDITION.
DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OR THE FOOT. MINIMUM SPACE
BETWEEN PROTRUSIONS AND ADJACENT LEAD
TO BE 0.46 ( 0.018).
LE
11
Q1
E HE
1
M_
L
10
DETAIL P
Z
D
e
VIEW P
A
A1
b
0.13 (0.005)
c
M
0.10 (0.004)
DIM
A
A1
b
c
D
E
e
HE
L
LE
M
Q1
Z
MILLIMETERS
MIN
MAX
--2.05
0.05
0.20
0.35
0.50
0.15
0.25
12.35
12.80
5.10
5.45
1.27 BSC
7.40
8.20
0.50
0.85
1.10
1.50
10 _
0_
0.70
0.90
--0.81
INCHES
MIN
MAX
--0.081
0.002
0.008
0.014
0.020
0.006
0.010
0.486
0.504
0.201
0.215
0.050 BSC
0.291
0.323
0.020
0.033
0.043
0.059
10 _
0_
0.028
0.035
--0.032
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