NTHL022N120M3S

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200V, M3S, TO-247-3L NTHL022N120M3S V(BR)DSS RDS(ON) MAX ID MAX 1200 V 30 m @ 18 V 89 A N−CHANNEL MOSFET D Features • • • • • Typ. RDS(on) = 22 m @ VGS = 18 V Ultra Low Gate Charge (QG(tot) = 137 nC) Low Effective Output Capacitance (Coss = 146 pF) 100% Avalanche Tested This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (on second level interconnection) G S Typical Applications • • • • • Solar Inverters Electric Vehicle Charging Stations UPS (Uninterruptible Power Supplies) Energy Storage Systems SMPS (Switch Mode Power Supplies) TO−247−3L CASE 340CX MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 1200 V Gate−to−Source Voltage VGS −10/+22 V Parameter Recommended Operation Values of Gate−to−Source Voltage TC < 175°C VGSop −3/+18 V Steady State TC = 25°C ID 89 A PD 348 W ID 62 A PD 174 W IDM 275 A TJ, Tstg −55 to +175 °C IS 72 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 23.1 A, L = 1 mH) (Note 4) EAS 267 mJ Maximum Lead Temperature for Soldering (1/25″ from case for 10 s) TL 270 °C Continuous Drain Current (Notes 1, 3) Power Dissipation (Note 1) Continuous Drain Current (Notes 1, 3) Steady State TC = 100°C Power Dissipation (Note 1) Pulsed Drain Current (Note 2) TC = 25°C Operating Junction and Storage Temperature Range Source Current (Body Diode) TC = 25°C VGS = −3 V (Note 1) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Repetitive rating, limited by max junction temperature. 3. The maximium current rating is based on typical RDS(on) performance. 4. EAS of 267 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 23.1 A, VDD = 100 V, VGS = 18 V. © Semiconductor Components Industries, LLC, 2022 May, 2023− Rev. 3 1 MARKING DIAGRAM HL022N 120M3S AYWWZZ HL022N120M3S = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Lot Traceability ORDERING INFORMATION Device Package Shipping NTHL022N120M3S TO−247−3L 30 Units / Tube Publication Order Number: NTHL022N120M3S/D NTHL022N120M3S THERMAL CHARACTERISTICS Symbol Max Unit Junction−to−Case − Steady State (Note 1) Parameter RJC 0.43 °C/W Junction−to−Ambient − Steady State (Note 1) RJA 40 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1 mA 1200 − − V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 1 mA, referenced to 25°C (Note 6) − 0.3 − V/°C − − 100 A OFF−STATE CHARACTERISTICS Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 1200 V TJ = 25°C Gate−to−Source Leakage Current IGSS VGS = +22/−10 V, VDS = 0 V − − ±1 A VGS(TH) VGS = VDS, ID = 20 mA 2.04 2.72 4.4 V −3 − +18 V VGS = 18 V, ID = 40 A, TJ = 25°C − 22 30 m VGS = 18 V, ID = 40 A, TJ = 175°C (Note 6) − 44 − VDS = 10 V, ID = 40 A (Note 6) − 34 − S − 3175 − pF − 146 − ON−STATE CHARACTERISTICS Gate Threshold Voltage Recommended Gate Voltage Drain−to−Source On Resistance Forward Transconductance VGOP RDS(on) gFS CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance VGS = 0 V, f = 1 MHz, VDS = 800 V CRSS − 14 − Total Gate Charge QG(TOT) − 137 − Threshold Gate Charge QG(TH) − 9.2 − Gate−to−Source Charge QGS − 15 − Gate−to−Drain Charge QGD − 34 − − 1.5 −  td(ON) − 19 − ns tr − 50 − − 44 − − 14 − − 1212 − Gate−Resistance VGS = −3/18 V, VDS = 800 V, ID = 40 A RG f = 1 MHz nC SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(OFF) tf VGS = −3/18 V, VDS = 800 V, ID = 40 A, RG = 4.5  Inductive Load (Notes 5, 6) Turn−On Switching Loss EON Turn−Off Switching Loss EOFF − 307 − Etot − 1519 − Total Switching Loss J SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Source−Drain Diode Forward Current (Note 1) ISD Pulsed Source−Drain Diode Forward Current (Note 2) ISDM Forward Diode Voltage VSD − − 72 VGS = −3 V, TC = 25°C (Note 6) − − 275 VGS = −3 V, ISD = 40 A, TJ = 25°C − 4.5 − www.onsemi.com 2 A V NTHL022N120M3S ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued) Parameter Symbol Test Condition Min Typ Max Unit SOURCE−DRAIN DIODE CHARACTERISTICS Reverse Recovery Time tRR − 24 − ns Reverse Recovery Charge QRR − 150 − nC Reverse Recovery Energy EREC − 14 − J Peak Reverse Recovery Current IRRM − 12 − A VGS = −3/18 V, ISD = 40 A, dIS/dt = 1000 A/s, VDS = 800 V (Note 6) Charge time tA − 14 − ns Discharge time tB − 11 − ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. EON/EOFF result is with body diode. 6. Defined by design, not subject to production test. www.onsemi.com 3 NTHL022N120M3S TYPICAL CHARACTERISTICS 2.0 RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE 200 ID, DRAIN CURRENT (A) VGS = 20 V to 15 V 150 12 V 100 50 TC = 25°C 0 RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE 2.5 2.0 1 5 4 6 7 9 8 10 1.0 VGS = 20 V to 15 V 0.5 TC = 25°C 0 0 40 80 120 Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 250 ID = 40 A VGS = 18 V 1.0 0.5 −5 20 45 70 95 120 145 200 150 100 TJ = 150°C 50 0 170 ID = 40 A TJ = 25°C 5 9 13 17 TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. On−Resistance Variation with Temperature Figure 4. On−Resistance vs. Gate−to−Source Voltage 1600 100 VDS = 10 V SWITCHING LOSS (J) 60 40 TJ = 25°C TJ = 175°C Etot RG = 4.5  VDD = 800 V VGS = 18/−3 V 1400 80 20 160 ID, DRAIN CURRENT (A) 1.5 0 1.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0 −55 −30 ID, DRAIN CURRENT (A) 3 2 RDS(on), ON−RESISTANCE (m) 0 12 V 1200 1000 Eon 800 600 400 Eoff 200 TJ = −55°C 3 6 9 0 12 15 5 10 15 20 25 30 35 40 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 5. Transfer Characteristics Figure 6. Switching Loss vs. Drain Current www.onsemi.com 4 45 NTHL022N120M3S TYPICAL CHARACTERISTICS 1800 900 Etot 1200 RG = 4.5  VDD = 800 V VGS = 18/−3 V 900 600 Eoff 300 0 500 600 700 800 900 SWITCHING LOSS (J) 400 300 Eoff 200 0 1000 2 4 6 8 10 Figure 8. Switching Loss vs. Gate Resistance 300 Etot Eon 600 500 ID = 20 A VDD = 800 V RG = 4.5  VGS = 18/−3 V 400 300 200 Eoff 25 0 Figure 7. Switching Loss vs. Drain Voltage 100 50 75 100 125 150 175 VGS = −3 V 100 TJ = 25°C TJ = 175°C 10 1 1 3 TJ = −55°C 5 7 9 TEMPERATURE (°C) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 9. Switching Loss vs. Temperature Figure 10. Diode Forward Voltage vs. Current 10000 18 ID = 40 A 15 Ciss VDD = 800 V VDD = 400 V 12 VDD = 600 V 9 6 3 CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) 500 RG, GATE RESISTANCE () 700 1000 Coss 100 Crss 10 0 −3 Eon 600 VDD (V) 800 0 700 100 IS, REVERSE DRAIN CURRENT (A) SWITCHING LOSS (J) SWITCHING LOSS (J) Eon 1500 Etot ID = 20 A VDD = 800 V VGS = 18/−3 V 800 0 30 60 90 120 1 150 f = 1 MHz VGS = 0 V 0.1 1 10 100 800 Qg, GATE CHARGE (nC) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Gate−to−Source Voltage vs. Total Charge Figure 12. Capacitance vs. Drain−to−Source Voltage www.onsemi.com 5 NTHL022N120M3S TYPICAL CHARACTERISTICS ID, DRAIN CURRENT (A) 100 TJ = 25°C TJ = 150°C 10 0.001 VGS = 18 V 60 40 20 0.01 0.1 1 75 100 125 150 Figure 13. Unclamped Inductive Switching Capability Figure 14. Maximum Continuous Drain Current vs. Case Temperature 175 100000 10 s 100 s 10 0.1 50 TC, CASE TEMPERATURE (°C) 100 1 0 25 tAV, TIME IN AVALANCHE (ms) 1000 ID, DRAIN CURRENT (A) 80 RJC = 0.43°C/W 1 0.1 1 1 ms 10 ms Single Pulse TJ = Max Rated RJC = 0.43°C/W TC = 25°C 100 ms/DC 10 100 P(PK), PEAK TRANSIENT POWER (W) IAS, AVALANCHE CURRENT (A) 100 1000 2000 Single Pulse RJC = 0.43°C/W TC = 25°C 10000 1000 100 0.00001 0.0001 0.001 0.01 0.1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 15. Safe Operating Area Figure 16. Single Pulse Maximum Power Dissipation 1 ZJC, EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) 1 0.5 Duty Cycle 0.1 0.2 0.1 0.05 0.02 0.01 0.01 P DM Single Pulse t1 t2 0.001 0.00001 0.0001 0.001 0.01 t, PULSE TIME (s) Figure 17. Junction−to−Case Transient Thermal Response www.onsemi.com 6 Notes: ZJC(t) = r(t) x RJC RJC = 0.43°C/W Peak TJ = PDM x ZJC(t) + TC Duty Cycle, D = t1/t2 0.1 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE A DATE 06 JUL 2020 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG DOCUMENT NUMBER: DESCRIPTION: XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 98AON93302G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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