NVMFS5C466NLT1G

DATA SHEET www.onsemi.com MOSFET – Power, Single N-Channel V(BR)DSS RDS(ON) MAX 7.3 m @ 10 V 40 V D (5,6) NVMFS5C466NL Features • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C466NLWF − Wettable Flank Option for Enhanced Optical Inspection AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V ID 52 A Parameter Continuous Drain Current RJC (Notes 1, 3) TC = 25°C Power Dissipation RJC (Note 1) Continuous Drain Current RJA (Notes 1, 2, 3) Steady State TC = 100°C TC = 25°C Power Dissipation RJA (Notes 1 & 2) Pulsed Drain Current 37 PD TC = 100°C TA = 25°C Steady State ID PD A 16 W 3.5 1.75 IDM 238.6 A TJ, Tstg −55 to + 175 °C IS 31.25 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 2.93 A) EAS 65 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C TA = 25°C, tp = 10 s Operating Junction and Storage Temperature Source Current (Body Diode) S (1,2,3) N−CHANNEL MOSFET 1 DFN5 5x6, 1.27P (SO−8FL) CASE 488AA DFNW5 5x6 (FULL−CUT SO8FL WF) CASE 507BA MARKING DIAGRAM 11 TA = 100°C G (4) W 37 19 TA = 100°C TA = 25°C 52 A 12 m @ 4.5 V 40 V, 7.3 mW, 52 A • • • • ID MAX Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. D S S S G D XXXXXX AYWZZ D D XXXXXX = 5C466NL XXXXXX = (NVMFS5C466NL) or XXXXXX = 466LWF XXXXXX = (NVMFS5C466NLWF) A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information on page 5 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RJC 4.0 °C/W Junction−to−Ambient − Steady State (Note 2) RJA 43 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. © Semiconductor Components Industries, LLC, 2017 April, 2022 − Rev.1 1 Publication Order Number: NVMFS5C466NL/D NVMFS5C466NL 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Test Condition Min Typ Max Unit Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 A 40 − − V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ − 25 − TJ = 25 °C − − 10 TJ = 125°C − − 250 Parameter OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VGS = 0 V, VDS = 40 V mV/°C A IGSS VDS = 0 V, VGS = 20 V − − 100 nA VGS(TH) VGS = VDS, ID = 30 A 1.2 − 2.2 V − −4.9 − mV/°C ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) VGS = 4.5 V ID = 10 A − 9.7 12 m Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 10 A − 6.1 7.3 m − 33 − S − 860 − − 360 − − 15 − Forward Transconductance gFS VDS =15 V, ID = 10 A CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1 MHz, VDS = 25 V pF Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 32 V; ID = 10 A − 7 − nC Total Gate Charge QG(TOT) VGS = 10 V, VDS = 32 V; ID = 10 A − 16 − nC Threshold Gate Charge QG(TH) − 1.8 − Gate−to−Source Charge QGS − 3.3 − Gate−to−Drain Charge QGD − 2.5 − Plateau Voltage VGP − 3.4 − td(ON) − 8 − − 24 − − 29 − − 6 − TJ = 25°C − 0.84 1.2 TJ = 125°C − 0.71 − − 24 − − 11 − − 12 − − 11 v VGS = 10 V, VDS = 32 V; ID = 10 A nC V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 32 V, ID = 10 A, RG = 1  tf ns DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A VGS = 0 V, dIS/dt = 100 A/s, IS = 10 A QRR V ns nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 s, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFS5C466NL TYPICAL CHARACTERISTICS 100 VGS = 10 to 5 V ID, DRAIN CURRENT (A) 50 3.8 V 40 3.6 V 30 3.4 V 20 3.2 V 10 0 0.5 1.0 2.0 1.5 70 60 50 40 30 TJ = 25°C 20 2.5 0 3.0 0 2 1 TJ = −55°C 3 4 Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (m) Figure 1. On−Region Characteristics 20 15 10 5 4 5 6 7 8 9 10 12 TJ = 25°C 11 6 5 VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 25 A TJ = 25°C 3 TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 25 0 80 10 VGS = 4.5 V 10 9 8 7 VGS = 10 V 6 5 4 10 15 20 25 30 40 35 45 50 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10K 1.8 1.6 ID = 10 A VGS = 10 V TJ = 150°C IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE (m) 0 VDS = 10 V 90 4.5 V 60 ID, DRAIN CURRENT (A) 70 1.4 1.2 1.0 1K TJ = 125°C 100 TJ = 85°C 0.8 0.6 −50 −25 0 25 50 75 100 125 150 10 175 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NVMFS5C466NL TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 5K C, CAPACITANCE (pF) Ciss 500 Coss 50 TJ = 25°C VGS = 0 V f = 1 MHz 5 0 5 Crss 10 15 20 25 30 35 40 10 9 8 7 6 5 Qgs 4 3 VDS = 32 V ID = 10 A TJ = 25°C 2 1 0 0 2 14 VGS = 10 V VDS = 32 V 1 1 10 16 VGS = 0 V IS, SOURCE CURRENT (A) t, TIME (ns) td(on) tf TJ = 125°C 0.3 0.4 0.5 TJ = −55°C TJ = 25°C 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE () VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 Single Pulse VGS ≤ 10 V TC = 25°C TJ(initial) = 25°C 10 IPEAK (A) ID, DRAIN CURRENT (A) 12 10 Figure 8. Gate−to−Source vs. Total Charge tr 100 8 Figure 7. Capacitance Variation td(off) 1000 6 Qg, TOTAL GATE CHARGE (nC) 100 1 4 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 10 10 Qgd 10 TJ(initial) = 100°C 1 1 0.1 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 10 s 0.5 ms 1 ms 10 ms 100 1000 0.1 0.00001 0.0001 0.001 0.01 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NVMFS5C466NL TYPICAL CHARACTERISTICS 100 50% Duty Cycle R(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Response DEVICE ORDERING INFORMATION Device Marking Package Shipping† NVMFS5C466NLT1G 5C466L DFN5 5x6, 1.27P (SO−8FL) (Pb−Free) 1500 / Tape & Reel NVMFS5C466NLWFT1G 466LWF DFNW5, 5x6 (FULL−CUT SO8FL WF) (Pb−Free, Wettable Flanks) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D 2 A B D1 2X 0.20 C 4X E1 2 1 2 3 q E c A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K PIN 5 (EXPOSED PAD) RECOMMENDED SOLDERING FOOTPRINT* E2 L1 M 2X 0.495 4.560 2X 1.530 G D2 BOTTOM VIEW 2X XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFNW5 5x6 (FULL−CUT SO8FL WF) CASE 507BA ISSUE A DATE 03 FEB 2021 q q GENERIC MARKING DIAGRAM* 1 XXXXXX AYWZZ XXXXXX A Y W ZZ = Specific Device Code *This information is generic. Please refer to = Assembly Location device data sheet for actual part marking. = Year Pb−Free indicator, “G” or microdot “ G”, = Work Week may or may not be present. Some products = Lot Traceability may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON26450H Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DFNW5 5x6 (FULL−CUT SO8FL WF) PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ADDITIONAL INFORMATION TECHNICAL PUBLICATIONS: Technical Library: www.onsemi.com/design/resources/technical−documentation onsemi Website: www.onsemi.com  ONLINE SUPPORT: www.onsemi.com/support For additional information, please contact your local Sales Representative at www.onsemi.com/support/sales