1 | 2SC945-P | 晶体管类型:NPN;集射极击穿电压(Vceo):50V;集电极电流(Ic):150mA;功率(Pd):250mW;集电极截止电流(Icbo):100nA;集电极-发... | 下载 | Foshan Blue Rocket Electronics Co., Ltd. |
2 | 250-222 | Pcb Terminal Block; Push-Button; 1.5 Mm ; Pin Spacing 3.5 Mm; 22-Pole; Push-In Cag... | 下载 | WAGO |
3 | 250-213 | Pcb Terminal Block; Push-Button; 1.5 Mm ; Pin Spacing 3.5 Mm; 13-Pole; Push-In Cag... | 下载 | WAGO |
4 | 2N6517BU | 晶体管类型:NPN;集射极击穿电压(Vceo):350V;集电极电流(Ic):500mA;功率(Pd):625mW;直流电流增益(hFE@Ic,Vce):20@50... | 下载 | Murata Manufacturing Co., Ltd. |
5 | 2SA2039-TL-E | 晶体管类型:-;集射极击穿电压(Vceo):-;集电极电流(Ic):-;功率(Pd):-;集电极截止电流(Icbo):-;集电极-发射极饱和电压(VCE(sat)@... | 下载 | Murata Manufacturing Co., Ltd. |
6 | 2EZ7.5D5 | 二极管 - 齐纳 7.5 V 2 W ±5% 通孔 DO-204AL(DO-41) | 下载 | Microchip Technology Inc. |
7 | 2EZ33D5 | 二极管 - 齐纳 33 V 2 W ±5% 通孔 DO-204AL(DO-41) | 下载 | Microchip Technology Inc. |
8 | 2EZ75D5 | 二极管 - 齐纳 75 V 2 W ±5% 通孔 DO-204AL(DO-41) | 下载 | Microchip Technology Inc. |
9 | 2EZ18D5--TR12 | 二极管 - 齐纳 18 V 2 W ±5% 通孔 DO-204AL(DO-41) | 下载 | Microchip Technology Inc. |
10 | 2EZ28_R2_00001 | SILICON ZENER DIODE | 下载 | PANJIT SEMI CONDUCTOR |
11 | 2A07G-T A0G | 二极管配置:-;直流反向耐压(Vr):1kV;平均整流电流(Io):2A;正向压降(Vf):1V@2A; | 下载 | TAIWAN SEMICONDUCTOR |
12 | 2EZ24_R2_00001 | SILICON ZENER DIODE | 下载 | PANJIT SEMI CONDUCTOR |
13 | 2EZ8.2_R2_00001 | SILICON ZENER DIODE | 下载 | PANJIT SEMI CONDUCTOR |
14 | 2EZ39_R2_00001 | 二极管 - 齐纳 39 V 2 W ±5% 通孔 DO-15 | 下载 | PANJIT SEMI CONDUCTOR |
15 | 2SC2983 | 晶体管类型:NPN;集射极击穿电压(Vceo):160V;集电极电流(Ic):1.5A;功率(Pd):1W;集电极截止电流(Icbo):1μA;集电极-发射极饱和电... | 下载 | Rubycon Corporation |
16 | 2SC2073T1TL | 晶体管类型:NPN;集射极击穿电压(Vceo):150V;集电极电流(Ic):1.5A;功率(Pd):25W;集电极截止电流(Icbo):10uA;集电极-发射极饱... | 下载 | Sourcechips |
17 | 2SC4081FRAT106R | 晶体管类型:NPN;集射极击穿电压(Vceo):50V;集电极电流(Ic):150mA;功率(Pd):200mW; | 下载 | Rohm Semiconductor |
18 | 2SA1576A | 晶体管类型:PNP;集射极击穿电压(Vceo):50V;集电极电流(Ic):150mA;功率(Pd):200mW;集电极-发射极饱和电压(VCE(sat)@Ic,I... | 下载 | Rubycon Corporation |
19 | 2N7002W | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):115mA;功率(Pd):200mW;导通电阻(RDS(on)@Vgs,Id):5Ω@10V,50... | 下载 | Rubycon Corporation |
20 | 2N7002WT1G | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):310mA;功率(Pd):280mW;导通电阻(RDS(on)@Vgs,Id):1.6Ω@10V,... | 下载 | Murata Manufacturing Co., Ltd. |