| 1 | 2N7002NXBKR | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):270mA；330mA;功率(Pd):310mW；1.67W;导通电阻(RDS(on)@Vgs,I... | 下载 | Rubycon Corporation |
| 2 | 2SA1036KFRAT146R | 晶体管类型:PNP;集射极击穿电压(Vceo):32V;集电极电流(Ic):500mA;功率(Pd):200mW;集电极截止电流(Icbo):1μA;集电极-发射极... | 下载 | Rohm Semiconductor |
| 3 | 2SA1037AKFRAT146R | 晶体管类型:PNP;集射极击穿电压(Vceo):50V;集电极电流(Ic):150mA;功率(Pd):200mW;集电极截止电流(Icbo):100nA;集电极-发... | 下载 | Rohm Semiconductor |
| 4 | 2SJ168-VB | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):500mA;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):3Ω@10V,0.5A;阈... | 下载 | VBsemi Electronics Co. Ltd |
| 5 | 2PD601ARL,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):50V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):210@2m... | 下载 | Rubycon Corporation |
| 6 | 2PD601ART,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):50V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):210@2m... | 下载 | Rubycon Corporation |
| 7 | 2N7002KB-VB | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):250mA;功率(Pd):300mW;导通电阻(RDS(on)@Vgs,Id):3.3Ω@10V,... | 下载 | VBsemi Electronics Co. Ltd |
| 8 | 2N7002K | | 下载 | PSI |
| 9 | 2N7002LT7G | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):115mA;功率(Pd):225mW;导通电阻(RDS(on)@Vgs,Id):7.5Ω@500m... | 下载 | Murata Manufacturing Co., Ltd. |
| 10 | 2341 | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-; | 下载 | Shenzhen Tuofeng Semiconductor Technology Co., Ltd. |
| 11 | 2PD602AQL,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):50V;集电极电流(Ic):500mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):85@150... | 下载 | Rubycon Corporation |
| 12 | 2SJ621-T1B-AT | MOSFET P-CH 12V SC-96 SOT-23 | 下载 | Renesas Electronics America |
| 13 | 2SC380TM-Y | 晶体管类型:NPN;集射极击穿电压(Vceo):30V;集电极电流(Ic):50mA;功率(Pd):300mW;集电极截止电流(Icbo):100nA;集电极-发射... | 下载 | Foshan Blue Rocket Electronics Co., Ltd. |
| 14 | 250-220 | Pcb Terminal Block; Push-Button; 1.5 Mm ; Pin Spacing 3.5 Mm; 20-Pole; Push-In Cag... | 下载 | WAGO |
| 15 | 2N3904BU | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):200mA;功率(Pd):625mW;集电极截止电流(Icbo):-;集电极-发射极饱和... | 下载 | Murata Manufacturing Co., Ltd. |
| 16 | 2N3906TF | 晶体管类型:PNP;集射极击穿电压(Vceo):40V;集电极电流(Ic):200mA;功率(Pd):625mW;直流电流增益(hFE@Ic,Vce):100@10... | 下载 | Murata Manufacturing Co., Ltd. |
| 17 | 2N5550TA | 晶体管类型:NPN;集射极击穿电压(Vceo):140V;集电极电流(Ic):600mA;功率(Pd):625mW;直流电流增益(hFE@Ic,Vce):60@10... | 下载 | Murata Manufacturing Co., Ltd. |
| 18 | 2N4401TAR | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):600mA;功率(Pd):625mW;集电极截止电流(Icbo):-;集电极-发射极饱和... | 下载 | Murata Manufacturing Co., Ltd. |
| 19 | 2EZ180D5 | 二极管 - 齐纳 180 V 2 W ±5% 通孔 DO-204AL（DO-41） | 下载 | Microchip Technology Inc. |
| 20 | 2EZ15_R2_00001 | SILICON ZENER DIODE | 下载 | PANJIT SEMI CONDUCTOR |
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