| 1 | PS1117-5.0 | 输出类型:固定;输出极性:正;最大输入电压:20V;输出电压:5V;输出电流:1A;电源纹波抑制比(PSRR):60dB@(120Hz); | 下载 | PSI |
| 2 | PWR013216(1206)L1002FTU | 贴片电阻 1206 10KΩ ±1% 1/2W | 下载 | Shenzhen Meilong Electronic Co.,Ltd. |
| 3 | PRM16M0207J0T104 | MELF电阻 MELF0207 100KΩ ±5% 1W | 下载 | Thunder Precision Resistor Co., Ltd. |
| 4 | PSMN3R7-100BSEJ | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):120A;功率(Pd):405W;导通电阻(RDS(on)@Vgs,Id):3.95mΩ@25A... | 下载 | Rubycon Corporation |
| 5 | PSMN015-60BS,118 | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):50A;功率(Pd):86W;导通电阻(RDS(on)@Vgs,Id):14.8mΩ@15A,10... | 下载 | Rubycon Corporation |
| 6 | PBSS8110X,135 | 晶体管类型:NPN;集射极击穿电压(Vceo):100V;集电极电流(Ic):1A;功率(Pd):1.4W;直流电流增益(hFE@Ic,Vce):150@250mA... | 下载 | Rubycon Corporation |
| 7 | PXTA42,115 | 晶体管类型:NPN;集射极击穿电压(Vceo):300V;集电极电流(Ic):100mA;功率(Pd):1.3W;直流电流增益(hFE@Ic,Vce):40@30m... | 下载 | Rubycon Corporation |
| 8 | PXT2222A,115 | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):600mA;功率(Pd):800mW;集电极截止电流(Icbo):10nA;集电极-发射... | 下载 | Rubycon Corporation |
| 9 | PBSS4021NX,115 | 晶体管类型:NPN;集射极击穿电压(Vceo):20V;集电极电流(Ic):7A;功率(Pd):600mW;集电极截止电流(Icbo):100nA;集电极-发射极饱... | 下载 | Rubycon Corporation |
| 10 | PBSS4032NX,115 | 晶体管类型:NPN;集射极击穿电压(Vceo):30V;集电极电流(Ic):4.7A;功率(Pd):600mW;集电极截止电流(Icbo):100nA;集电极-发射... | 下载 | Rubycon Corporation |
| 11 | PBSS306PX,115 | 晶体管类型:PNP;集射极击穿电压(Vceo):100V;集电极电流(Ic):3.7A;功率(Pd):600mW;集电极截止电流(Icbo):100nA;集电极-发... | 下载 | Rubycon Corporation |
| 12 | PBSS9110X,135 | 晶体管类型:PNP;集射极击穿电压(Vceo):100V;集电极电流(Ic):1A;功率(Pd):1.4W;直流电流增益(hFE@Ic,Vce):150@500mA... | 下载 | Rubycon Corporation |
| 13 | PBSS5350X,135 | 晶体管类型:PNP;集射极击穿电压(Vceo):50V;集电极电流(Ic):3A;功率(Pd):1.4W;直流电流增益(hFE@Ic,Vce):200@1A,2V; | 下载 | Rubycon Corporation |
| 14 | PDTD123TT,215 | Pre Biased Triodes NPN Ic=500mA Vceo=50V hfe=100 P=250mW SOT23 | 下载 | Rubycon Corporation |
| 15 | PDTC144WT,215 | 1 NPN - Pre Biased 250mW 100mA 50V SOT-23-3L Digital Transistors ROHS | 下载 | Rubycon Corporation |
| 16 | PDTD113ZT,215 | 1 NPN - Pre Biased 250mW 500mA 50V SOT-23-3L Digital Transistors ROHS | 下载 | Rubycon Corporation |
| 17 | PDTD123YT,215 | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):500mA;集射极击穿电压(Vceo):50V; | 下载 | Rubycon Corporation |
| 18 | PDTA123YT,215 | One PNP - Pre-Biased 250mW 100mA 50V SOT-23 Digital Transistors ROHS | 下载 | Rubycon Corporation |
| 19 | PDTC143ZT,215 | 100@10mA,5V 100mV@5mA,250uA 1 NPN - Pre Biased 230MHz 250mW 100mA 50V 1uA SOT-23 ... | 下载 | Rubycon Corporation |
| 20 | PDTB123ET,215 | 晶体管类型:1个PNP-预偏置;功率(Pd):250mW;集电极电流(Ic):500mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100nA... | 下载 | Rubycon Corporation |
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