1 | PBSS5320X,135 | 晶体管类型:PNP;集射极击穿电压(Vceo):20V;集电极电流(Ic):3A;功率(Pd):1.6W;直流电流增益(hFE@Ic,Vce):150@2A,2V; | 下载 | Rubycon Corporation |
2 | PDTA144ET,215 | One PNP - Pre-Biased 250mW 100mA 50V SOT-23 Digital Transistors ROHS | 下载 | Rubycon Corporation |
3 | PDTC144ET,215 | 1 NPN - Pre Biased 250mW 100mA 50V SOT-23-3L Digital Transistors ROHS | 下载 | Rubycon Corporation |
4 | PDTA143ZT,215 | One PNP - Pre-Biased 250mW 100mA 50V SOT-23 Digital Transistors ROHS | 下载 | Rubycon Corporation |
5 | PDTA143ET,215 | One PNP - Pre-Biased 250mW 100mA 50V SOT-23 Digital Transistors ROHS | 下载 | Rubycon Corporation |
6 | PDTC143XT,215 | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V; | 下载 | Rubycon Corporation |
7 | PDTC114YT,215 | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V; | 下载 | Rubycon Corporation |
8 | PDTB123YT,215 | 晶体管类型:1个PNP-预偏置;功率(Pd):250mW;集电极电流(Ic):500mA;集射极击穿电压(Vceo):50V; | 下载 | Rubycon Corporation |
9 | PDTA114YT,215 | 晶体管类型:-;集射极击穿电压(Vceo):-;集电极电流(Ic):-;功率(Pd):-;集电极截止电流(Icbo):-;集电极-发射极饱和电压(VCE(sat)@... | 下载 | Rubycon Corporation |
10 | PMBTA64,215 | 30V 20000@5V,100mA PNP 125MHz 100nA 500mA 250mW +150℃@(Tj) 1.5V@100mA,100uA SOT-23... | 下载 | Rubycon Corporation |
11 | PMBTA13,215 | 10000@5V,100mA 30V NPN 125MHz 100nA 500mA 250mW +150℃@(Tj) 1.5V@100mA,100uA SOT-23... | 下载 | Rubycon Corporation |
12 | PDTA143XT,215 | 晶体管类型:1个PNP-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100nA... | 下载 | Rubycon Corporation |
13 | PDTC124XT,215 | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):1uA;直... | 下载 | Rubycon Corporation |
14 | PDTC144VT,215 | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):1uA;直... | 下载 | Rubycon Corporation |
15 | PBSS5140T,215 | 晶体管类型:PNP;集射极击穿电压(Vceo):40V;集电极电流(Ic):1A;功率(Pd):450mW;直流电流增益(hFE@Ic,Vce):300@100mA... | 下载 | Rubycon Corporation |
16 | PMBT2907A,215 | 晶体管类型:PNP;集射极击穿电压(Vceo):60V;集电极电流(Ic):600mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@15... | 下载 | Rubycon Corporation |
17 | PMV16XNR | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):6.8A;功率(Pd):510mW;6.94W;导通电阻(RDS(on)@Vgs,Id):20mΩ... | 下载 | Rubycon Corporation |
18 | PBSS5160T,215 | 晶体管类型:PNP;集射极击穿电压(Vceo):60V;集电极电流(Ic):1A;功率(Pd):400mW; | 下载 | Rubycon Corporation |
19 | PMV30XPEAR | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):4.5A;功率(Pd):490mW;5.435W;导通电阻(RDS(on)@Vgs,Id):34m... | 下载 | Rubycon Corporation |
20 | PMBTA45,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):500V;集电极电流(Ic):150mA;功率(Pd):300mW;直流电流增益(hFE@Ic,Vce):50@50... | 下载 | Rubycon Corporation |