1 | PMBTA13,215 | 10000@5V,100mA 30V NPN 125MHz 100nA 500mA 250mW +150℃@(Tj) 1.5V@100mA,100uA SOT-23... | 下载 | Rubycon Corporation |
2 | PDTA143XT,215 | 晶体管类型:1个PNP-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100nA... | 下载 | Rubycon Corporation |
3 | PDTC124XT,215 | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):1uA;直... | 下载 | Rubycon Corporation |
4 | PDTC144VT,215 | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):1uA;直... | 下载 | Rubycon Corporation |
5 | PBSS5140T,215 | 晶体管类型:PNP;集射极击穿电压(Vceo):40V;集电极电流(Ic):1A;功率(Pd):450mW;直流电流增益(hFE@Ic,Vce):300@100mA... | 下载 | Rubycon Corporation |
6 | PMBT2907A,215 | 晶体管类型:PNP;集射极击穿电压(Vceo):60V;集电极电流(Ic):600mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@15... | 下载 | Rubycon Corporation |
7 | PMV16XNR | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):6.8A;功率(Pd):510mW;6.94W;导通电阻(RDS(on)@Vgs,Id):20mΩ... | 下载 | Rubycon Corporation |
8 | PBSS5160T,215 | 晶体管类型:PNP;集射极击穿电压(Vceo):60V;集电极电流(Ic):1A;功率(Pd):400mW; | 下载 | Rubycon Corporation |
9 | PMV30XPEAR | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):4.5A;功率(Pd):490mW;5.435W;导通电阻(RDS(on)@Vgs,Id):34m... | 下载 | Rubycon Corporation |
10 | PMBTA45,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):500V;集电极电流(Ic):150mA;功率(Pd):300mW;直流电流增益(hFE@Ic,Vce):50@50... | 下载 | Rubycon Corporation |
11 | PMV30UN2R | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):4.2A;功率(Pd):490mW;5W;导通电阻(RDS(on)@Vgs,Id):32mΩ@4.... | 下载 | Rubycon Corporation |
12 | PBHV8118T,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):180V;集电极电流(Ic):1A;功率(Pd):300mW;直流电流增益(hFE@Ic,Vce):50@500mA... | 下载 | Rubycon Corporation |
13 | PBSS5220T,215 | 晶体管类型:PNP;集射极击穿电压(Vceo):20V;集电极电流(Ic):2A;功率(Pd):480mW;直流电流增益(hFE@Ic,Vce):200@1A,2V... | 下载 | Rubycon Corporation |
14 | PBSS4160TVL | 晶体管类型:NPN;集射极击穿电压(Vceo):60V;集电极电流(Ic):1A;功率(Pd):400mW;直流电流增益(hFE@Ic,Vce):250@1mA,5... | 下载 | Rubycon Corporation |
15 | PMV15ENEAR | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):6.2A;功率(Pd):700mW;8.3W;导通电阻(RDS(on)@Vgs,Id):20mΩ@... | 下载 | Rubycon Corporation |
16 | PMV20XNEAR | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):6.3A;功率(Pd):460mW;6.94W;导通电阻(RDS(on)@Vgs,Id):20mΩ... | 下载 | Rubycon Corporation |
17 | PMBT5551,235 | 晶体管类型:NPN;集射极击穿电压(Vceo):160V;集电极电流(Ic):300mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):80@10... | 下载 | Rubycon Corporation |
18 | PBHV8115T,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):150V;集电极电流(Ic):1A;功率(Pd):300mW;直流电流增益(hFE@Ic,Vce):50@500mA... | 下载 | Rubycon Corporation |
19 | PMV65XPEA | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;... | 下载 | Rubycon Corporation |
20 | PMV65XPEAR | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):2.8A;功率(Pd):480mW;6.25W;导通电阻(RDS(on)@Vgs,Id):78mΩ... | 下载 | Rubycon Corporation |