1 | PBSS8110X,135 | 晶体管类型:NPN;集射极击穿电压(Vceo):100V;集电极电流(Ic):1A;功率(Pd):1.4W;直流电流增益(hFE@Ic,Vce):150@250mA... | 下载 | Rubycon Corporation |
2 | PXTA42,115 | 晶体管类型:NPN;集射极击穿电压(Vceo):300V;集电极电流(Ic):100mA;功率(Pd):1.3W;直流电流增益(hFE@Ic,Vce):40@30m... | 下载 | Rubycon Corporation |
3 | PXT2222A,115 | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):600mA;功率(Pd):800mW;集电极截止电流(Icbo):10nA;集电极-发射... | 下载 | Rubycon Corporation |
4 | PBSS4021NX,115 | 晶体管类型:NPN;集射极击穿电压(Vceo):20V;集电极电流(Ic):7A;功率(Pd):600mW;集电极截止电流(Icbo):100nA;集电极-发射极饱... | 下载 | Rubycon Corporation |
5 | PBSS4032NX,115 | 晶体管类型:NPN;集射极击穿电压(Vceo):30V;集电极电流(Ic):4.7A;功率(Pd):600mW;集电极截止电流(Icbo):100nA;集电极-发射... | 下载 | Rubycon Corporation |
6 | PBSS306PX,115 | 晶体管类型:PNP;集射极击穿电压(Vceo):100V;集电极电流(Ic):3.7A;功率(Pd):600mW;集电极截止电流(Icbo):100nA;集电极-发... | 下载 | Rubycon Corporation |
7 | PBSS9110X,135 | 晶体管类型:PNP;集射极击穿电压(Vceo):100V;集电极电流(Ic):1A;功率(Pd):1.4W;直流电流增益(hFE@Ic,Vce):150@500mA... | 下载 | Rubycon Corporation |
8 | PBSS5350X,135 | 晶体管类型:PNP;集射极击穿电压(Vceo):50V;集电极电流(Ic):3A;功率(Pd):1.4W;直流电流增益(hFE@Ic,Vce):200@1A,2V; | 下载 | Rubycon Corporation |
9 | PDTD123TT,215 | Pre Biased Triodes NPN Ic=500mA Vceo=50V hfe=100 P=250mW SOT23 | 下载 | Rubycon Corporation |
10 | PDTC144WT,215 | 1 NPN - Pre Biased 250mW 100mA 50V SOT-23-3L Digital Transistors ROHS | 下载 | Rubycon Corporation |
11 | PDTD113ZT,215 | 1 NPN - Pre Biased 250mW 500mA 50V SOT-23-3L Digital Transistors ROHS | 下载 | Rubycon Corporation |
12 | PDTD123YT,215 | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):500mA;集射极击穿电压(Vceo):50V; | 下载 | Rubycon Corporation |
13 | PDTA123YT,215 | One PNP - Pre-Biased 250mW 100mA 50V SOT-23 Digital Transistors ROHS | 下载 | Rubycon Corporation |
14 | PDTC143ZT,215 | 100@10mA,5V 100mV@5mA,250uA 1 NPN - Pre Biased 230MHz 250mW 100mA 50V 1uA SOT-23 ... | 下载 | Rubycon Corporation |
15 | PDTB123ET,215 | 晶体管类型:1个PNP-预偏置;功率(Pd):250mW;集电极电流(Ic):500mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100nA... | 下载 | Rubycon Corporation |
16 | PBRP113ET,215 | 晶体管类型:1个PNP-预偏置;功率(Pd):250mW;集电极电流(Ic):600mA;集射极击穿电压(Vceo):40V; | 下载 | Rubycon Corporation |
17 | PDTA113ZT,215 | 晶体管类型:1个PNP-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100mA... | 下载 | Rubycon Corporation |
18 | PDTB143ETR | 晶体管类型:1个PNP-预偏置;功率(Pd):320mW;集电极电流(Ic):500mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):500nA... | 下载 | Rubycon Corporation |
19 | PDTC123JT,235 | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):1uA;直... | 下载 | Rubycon Corporation |
20 | PMV15UNEAR | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):7A;功率(Pd):610mW;8.3W;导通电阻(RDS(on)@Vgs,Id):19mΩ@7A... | 下载 | Rubycon Corporation |