| 1 | PMV230ENEAR | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):1.5A;功率(Pd):480mW；1.45W;导通电阻(RDS(on)@Vgs,Id):222m... | 下载 | Rubycon Corporation |
| 2 | PDTC143ET,235 | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):1uA;直... | 下载 | Rubycon Corporation |
| 3 | PDTD123ET,215 | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):-;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100nA;直流电... | 下载 | Rubycon Corporation |
| 4 | PMBT4401,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):600mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@15... | 下载 | Rubycon Corporation |
| 5 | PMBT4403,215 | 晶体管类型:PNP;集射极击穿电压(Vceo):40V;集电极电流(Ic):600mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@15... | 下载 | Rubycon Corporation |
| 6 | PBSS4240T,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):2A;功率(Pd):480mW;直流电流增益(hFE@Ic,Vce):250@2A,2V... | 下载 | Rubycon Corporation |
| 7 | PBSS5320T,215 | 晶体管类型:PNP;集射极击穿电压(Vceo):20V;集电极电流(Ic):2A;功率(Pd):1.2W;直流电流增益(hFE@Ic,Vce):200@1A,2V; | 下载 | Rubycon Corporation |
| 8 | PMBT2369,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):15V;集电极电流(Ic):200mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):40@10m... | 下载 | Rubycon Corporation |
| 9 | PBSS4140T,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):1A;功率(Pd):450mW; | 下载 | Rubycon Corporation |
| 10 | PMV48XP,215 | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):3.5A;功率(Pd):510mW;导通电阻(RDS(on)@Vgs,Id):55mΩ@4.5V,... | 下载 | Rubycon Corporation |
| 11 | PMV65XP,215 | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):2.8A;功率(Pd):480mW;导通电阻(RDS(on)@Vgs,Id):74mΩ@4.5V,... | 下载 | Rubycon Corporation |
| 12 | PMBTA42,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):300V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):40@30... | 下载 | Rubycon Corporation |
| 13 | PMV25ENEAR | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):5.5A;功率(Pd):460mW；6.94W;导通电阻(RDS(on)@Vgs,Id):24mΩ... | 下载 | Rubycon Corporation |
| 14 | PBHV9050T,215 | 晶体管类型:PNP;集射极击穿电压(Vceo):500V;集电极电流(Ic):150mA;功率(Pd):300mW;直流电流增益(hFE@Ic,Vce):80@50... | 下载 | Rubycon Corporation |
| 15 | PMV48XPAR | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):3.5A;功率(Pd):510mW；4.15W;导通电阻(RDS(on)@Vgs,Id):55mΩ... | 下载 | Rubycon Corporation |
| 16 | PBSS4350TVL | 晶体管类型:NPN;集射极击穿电压(Vceo):50V;集电极电流(Ic):2A;功率(Pd):540mW;直流电流增益(hFE@Ic,Vce):300@1A,2V... | 下载 | Rubycon Corporation |
| 17 | PBSS5250T,215 | 晶体管类型:PNP;集射极击穿电压(Vceo):50V;集电极电流(Ic):2A;功率(Pd):480mW;直流电流增益(hFE@Ic,Vce):200@1A,2V... | 下载 | Rubycon Corporation |
| 18 | PMN30UNX | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):4.5A;功率(Pd):530mW；4.46W;导通电阻(RDS(on)@Vgs,Id):40mΩ... | 下载 | Rubycon Corporation |
| 19 | PJ8205 | 类型:2个N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):5A;功率(Pd):1.25W;导通电阻(RDS(on)@Vgs,Id):20mΩ@4.5V,... | 下载 | Dongguan Pingjingsemi Technology Co., Ltd. |
| 20 | P2402CAG-VB | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):6A;功率(Pd):2.5W;导通电阻(RDS(on)@Vgs,Id):23Ω@10V,5.5A;... | 下载 | VBsemi Electronics Co. Ltd |
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