RU1C002UN

Data Sheet 1.2V Drive Nch MOSFET RU1C002UN  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) UMT3F 2.0 0.32 0.9 0.53 (1) 0.65 0.65 1.3 (2) 0.13 Abbreviated symbol : QR  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RU1C002UN Taping TCL 3000   Inner circuit (3) ∗1 ∗2 (1) (2) (1) Gate (2) Source (3) Drain 1 BODY DIODE 2 ESD PROTECTION DIODE  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a reference land. Limits 20 8 200 *1 *2 Unit V V mA mA mW C C VDSS Continuous Pulsed VGSS ID IDP PD Tch Tstg 400 150 150 55 to 150  Thermal resistance Parameter Channel to Ambient * Each terminal mounted on a reference land. Symbol Rth (ch-a)* Limits 833 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.09 - Rev.A 0.53 0.425 Features 1) Low on-resistance. 2) Low voltage drive(1.2V drive). 0.425 (3) 1.25 2.1 RU1C002UN  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time *Pulsed 　 Symbol IGSS IDSS VGS (th) * Min. 20 0.3 RDS (on) l Yfs l * Ciss Coss Crss td(on) * tr * td(off) * tf * 400 Typ. 0.8 1.0 1.2 1.6 25 10 10 5 10 15 10 Max. 10 1 1.0 1.2 1.4 2.4 4.8 pF pF pF ns ns ns ns  Unit A V A V Conditions VGS=8V, VDS=0V ID=1mA, VGS=0V VDS=20V, VGS=0V VDS=10V, ID=1mA ID=200mA, VGS=2.5V ID=200mA, VGS=1.8V ID=40mA, VGS=1.5V ID=20mA, VGS=1.2V mS VDS=10V, ID=200mA VDS=10V VGS=0V f=1MHz VDD 10V, ID=150mA VGS=4.0V RL=68 RG=10 Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=100mA, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.09 - Rev.A RU1C002UN Electrical characteristics 　 Data Sheet 0.5 0.4 DRAIN CURRENT : ID[A] VGS= 1.5V 0.3 Ta=25°C Pulsed DRAIN CURRENT : ID[A] 0.5 0.4 0.3 0.2 VGS= 1.5V 0.1 0 Ta=25°C Pulsed 0 2 4 6 8 10 VGS= 1.2V VGS= 2.5V VGS= 1.8V VGS= 1.3V DRAIN CURRENT : ID (A) 1 VDS=10V Pulsed 0.1 VGS= 1.3V 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1 VGS= 4.5V VGS= 2.5V VGS= 1.8V VGS= 1.2V 0.01 Ta=125°C 75°C 25°C −25°C 0.001 0.0001 0.00001 0.0 0.5 1.0 1.5 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics( Ⅰ) DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics( Ⅱ) GATE-SOURCE VOLTAGE : VGS (V) Fig.3 Typical transfer characteristics 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta= 25°C Pulsed 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 1.2V VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.0V VGS= 4.0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 1000 1000 100 0.001 0.01 0.1 1 100 0.001 0.01 0.1 1 100 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 1.8V Pulsed 10000 VGS= 1.5V Pulsed 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 1.2V Pulsed 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.001 0.01 0.1 1 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.001 0.01 0.1 1 100 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) DRAIN-CURRENT : ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) DRAIN-CURRENT : ID[A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/5 2011.09 - Rev.A RU1C002UN 　 Data Sheet 1 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] SOURCE CURRENT : IS (A) 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[Ω] VDS= 10V Pulsed VGS=0V Pulsed 2.5 ID= 0.2A 2 1.5 1 0.5 0 0 2 4 6 8 ID= 0.02A Ta=25°C Pulsed Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 Ta=125°C 75°C 25°C −25°C 0.1 0.01 0.1 DRAIN-CURRENT : ID[A] Fig.10 Forward Transfer Admittance vs. Drain Current 1 0.01 0.0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) GATE-SOURCE VOLTAGE : VGS[V] Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage Fig.11 Source current vs. source-drain voltage 1000 SWITHING TIME : t (ns) CAPACITANCE : C (pF) Ta=25°C VDD=10V VGS=4V RG=10Ω Pulsed 100 Ta=25°C f=1MHZ VGS=0V 100 Ciss 10 Coss Crss 10 td(off) tf td(on) tr 1 0.01 0.1 DRAIN CURRENT : ID (A) 1 1 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.13 Switching characteristics Fig.14 Typical capacitance vs. drain-source voltage www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.09 - Rev.A RU1C002UN  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.09 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A