RU1C002ZP

Data Sheet 1.2V Drive Pch MOSFET RU1C002ZP  Structure Silicon P-channel MOSFET  Dimensions (Unit : mm) UMT3F 2.0 0.32 0.9 0.53 (1) 0.65 0.65 1.3 (2) 0.13 Abbreviated symbol : YK  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RU1C002ZP Taping TCL 3000   Inner circuit (3) ∗2 (1) Gate (2) Source (3) Drain (1) 0.53 0.425 Features 1) Low on-resistance. 2) Low voltage drive(1.2V drive). 0.425 (3) 1.25 2.1 ∗1 (2) 1 BODY DIODE 2 ESD PROTECTION DIODE  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a reference land. Limits 20 10 200 Unit V V mA mA mA mA mW C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID IDP IS ISP PD Tch Tstg *1 800 100 800 150 150 55 to 150 *1 *2  Thermal resistance Parameter Channel to Ambient * Each terminal mounted on a reference land. Symbol Rth (ch-a)* Limits 833 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.09 - Rev.A RU1C002ZP  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Symbol IGSS IDSS VGS (th) Min. 20 0.3 Static drain-source on-state resistance * RDS (on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Typ. 0.8 1.0 1.3 1.6 2.4 115 10 6 6 4 17 17 1.4 0.3 0.3 Max. 10 1 1.0 1.2 1.5 2.2 3.5 9.6 S pF pF pF ns ns ns ns nC nC nC  Unit A V A V Conditions VGS=10V, VDS=0V ID=1mA, VGS=0V VDS=20V, VGS=0V VDS=10V, ID=100A ID=200mA, VGS=4.5V ID=100mA, VGS=2.5V ID=100mA, VGS=1.8V ID=40mA, VGS=1.5V ID=10mA, VGS=1.2V VDS=10V, ID=200mA VDS=10V VGS=0V f=1MHz VDD 10V, ID=100mA VGS=4.5V RL=100 RG=10 VDD 10V, ID=200mA VGS=4.5V Data Sheet Drain-source breakdown voltage V(BR)DSS l Yfs l * Ciss Coss Crss td(on) * tr * td(off) * tf * Qg Qgs Qgd 0.2 - Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=200mA, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.09 - Rev.A RU1C002ZP Electrical characteristic curves (Ta = 25°C) 　 Data Sheet 0.2 VGS= -10.0V VGS= -4.5V VGS= -3.2V Ta=25°C Pulsed DRAIN CURRENT : -ID[A] 0.2 VGS= -4.5V VGS= -2.5V VGS= -1.8V VGS= -1.5V Ta=25°C Pulsed DRAIN CURRENT : -ID[A] 1 VDS= -10V Pulsed 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C DRAIN CURRENT : -ID[A] 0.15 0.15 0.1 VGS= -1.5V 0.05 VGS= -1.2V 0 0 0.2 0.4 0.6 VGS= -2.5V VGS= -2.0V VGS= -1.8V 0.1 VGS= -1.2V 0.01 0.05 VGS= -1.0V 0 0.001 VGS= -1.0V 0.0001 0 2 4 6 8 10 0 0.5 1 1.5 0.8 1 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical output characteristics( Ⅰ) DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical output characteristics( Ⅱ) GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta=25°C Pulsed VGS= -4.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 10000 10000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10000 VGS= -2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 VGS= -1.2V VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 0.01 0.1 1 1000 1000 100 0.001 100 0.001 0.01 0.1 1 100 0.001 0.01 0.1 1 DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) DRAIN-CURRENT : -ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) DRAIN-CURRENT : -ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS= -1.8V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C VGS= -1.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 10000 10000 10000 VGS= -1.2V Pulsed 1000 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.001 0.01 DRAIN-CURRENT : -ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ) 0.1 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.001 0.01 0.1 1 100 0.001 0.01 DRAIN-CURRENT : -ID[A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current( Ⅵ) 0.1 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/5 2011.09 - Rev.A RU1C002ZP 　 Data Sheet FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[Ω] REVERSE DRAIN CURRENT : -Is [A] 1.0 VDS= -10V Pulsed 1 VGS=0V Pulsed 5 4 ID= -0.2A 3 2 1 0 ID= -0.01A Ta=25°C Pulsed Ta=-25°C Ta=25°C Ta=75°C Ta=125°C 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.1 DRAIN-CURRENT : -ID[A] Fig.10 Forward Transfer Admittance vs. Drain Current 1 0.01 0 0.5 1 1.5 0 2 4 6 8 10 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : -VGS[V] Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1000 GATE-SOURCE VOLTAGE : -VGS [V] SWITCHING TIME : t [ns] td(off) 100 tf Ta=25°C VDD= -10V VGS=-4.5V RG=10Ω Pulsed 5 CAPACITANCE : C [pF] 4 3 2 1 0 0 0.5 1 1.5 Ta=25°C VDD= -10V ID= -0.2A RG=10Ω Pulsed 1000 Ta=25°C f=1MHz VGS=0V Ciss 100 10 10 Coss Crss 1 0.01 0.1 1 10 100 tr 1 0.01 td(on) 0.1 DRAIN-CURRENT : -ID[A] 1 TOTAL GATE CHARGE : Qg [nC] Fig.14 Dynamic Input Characteristics DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.15 Typical Capacitance vs. Drain-Source Voltage Fig.13 Switching Characteristics www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.09 - Rev.A RU1C002ZP  Measurement circuits 　 Data Sheet Pulse width ID VGS RL D.U.T. RG VDD VDS VGS 10% 50% 10% 90% 50% 10% 90% VDS 90% td(on) ton tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG ID VGS RL IG(Const.) D.U.T. VDD VDS VGS Qgs Qg Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.09 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A