RU1L002SN

Data Sheet 2.5V Drive Nch MOSFET RU1L002SN  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) UMT3F 2.0 0.32 0.9 0.53 Features 1) Low on-resistance. 2) Low voltage drive (2.5V drive). 3) Small package (UMT3F). 0.425 (3) 1.25 2.1 (1) 0.65 0.65 1.3 (2) 0.13 Abbreviated symbol : RK  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RU1L002SN Taping TCL 3000   Inner circuit (3) (1) ∗2 ∗1 (1) Gate (2) Source (3) Drain (2) 1 ESD PROTECTION DIODE 2 BODY DIODE  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land Limits 60 20 250 1 125 1 200 150 55 to 150 Unit V V mA A mA A mW C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID IDP *1 IS ISP Tch Tstg *1 PD *2  Thermal resistance Parameter Channel to Ambient * Each terminal mounted on a recommended land Symbol * Rth (ch-a) Limits 625 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.08 - Rev.A 0.53 0.425 RU1L002SN  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) Min. 60 1.0 l Yfs l * Ciss Coss Crss td(on) * tr * td(off) * tf * 0.25 Typ. 1.7 2.1 2.3 3.0 15 4.5 2.0 3.5 5 18 28 Max. 10 1 2.3 2.4 3.0 3.2 12.0 S pF pF pF ns ns ns ns  Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=60V, VGS=0V VDS=10V, ID=1mA ID=250mA, VGS=10V ID=250mA, VGS=4.5V ID=250mA, VGS=4.0V ID=10mA, VGS=2.5V VDS=10V, ID=250mA VDS=25V VGS=0V f=1MHz VDD 30V, ID=100mA VGS=10V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=250mA, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.08 - Rev.A RU1L002SN Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics(Ⅰ) 0.5 Ta= 25°C Pulsed 0.4 DRAIN CURRENT : ID[A] 　 Data Sheet Fig.2 Typical Output Characteristics(Ⅱ) 0.5 VGS= 10V VGS= 4.5V VGS= 4.0V Ta= 25°C Pulsed 0.4 DRAIN CURRENT : ID[A] VGS= 10V VGS= 4.5V VGS= 4.0V 0.3 0.3 VGS= 2.8V 0.2 VGS= 2.8V 0.2 0.1 VGS= 2.5V 0 0 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : VDS[V] 0.1 VGS= 2.5V 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[W ] Ta= 25°C Pulsed VGS= 2.5V VGS= 4.0V VGS= 4.5V VGS= 10V Fig.3 Typical Transfer Characteristics 1 VDS= 10V Pulsed 0.1 DRAIN CURRENT : ID[A] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.01 1 0.001 0.0001 0 1 2 3 0.1 0.001 0.01 0.1 1 GATE-SOURCE VOLTAGE : VGS[V] DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[W ] VGS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[W ] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 100 VGS= 4.5V Pulsed 10 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 1 0.1 0.001 0.01 0.1 1 0.1 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.08 - Rev.A RU1L002SN 　 Data Sheet Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[W ] VGS= 4.0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 100 VGS= 2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[W ] 1 10 1 1 0.1 0.001 0.01 0.1 0.1 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] Fig.9 Forward Transfer Admittance vs. Drain Current 1 REVERSE DRAIN CURRENT : Is [A] VDS= 10V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1 Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage VGS=0V Pulsed 0.1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.01 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.01 0.001 0.001 0.01 0.1 1 0 0.5 1 1.5 DRAIN-CURRENT : ID[A] SOURCE-DRAIN VOLTAGE : VSD [V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage 8 Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[W ] SWITCHING TIME : t [ns] ID= 0.01A 1000 Fig.12 Switching Characteristics Ta=25°C VDD= 30V VGS=10V RG=10W Pulsed td(off) tf 6 100 4 ID= 0.25A 10 td(on) tr 2 0 0 2.5 5 7.5 10 GATE-SOURCE VOLTAGE : VGS[V] 1 0.01 0.1 DRAIN-CURRENT : ID[A] 1 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.08 - Rev.A RU1L002SN 　 Data Sheet Fig.13 Typical Capacitance vs. Drain-Source Voltage 100 Ta=25°C f=1MHz VGS=0V CAPACITANCE : C [pF] Ciss 10 Crss Coss 1 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.08 - Rev.A RU1L002SN  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.08 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. 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