RU1E002SP

Data Sheet 4V Drive Pch MOSFET RU1E002SP  Structure Silicon P-channel MOSFET  Dimensions (Unit : mm) UMT3F 2.0 0.32 0.9 0.53 Features 1) High-speed switching. 2) Small package (UMT3F). 3) 4V drive. 0.425 (3) 1.25 2.1 (1) 0.65 0.65 1.3 (2) 0.13 Abbreviated symbol : WP  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RU1E002SP Taping TCL 3000   Inner circuit (3) ∗1 ∗2 (1) Gate (2) Source (3) Drain (1) ∗1 BODY DIODE ∗2 ESD PROTECTION DIODE  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Power dissipation Channel temperature Range of storage temperature *1 PW 10s, Duty cycle1% *2 Each terminal mounted on a reference land. Limits 30 20 0.25 0.5 0.2 150 55 to 150 Unit V V A A W C C VDSS Continuous Pulsed VGSS ID IDP *1 PD *2 Tch Tstg  Thermal resistance Parameter Channel to Ambient *Each terminal mounted on a reference land. Symbol Rth (ch-a)* Limits 625 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.08 - Rev.A 0.53 0.425 (2) RU1E002SP  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on)* tr * td(off)* tf * Min. 30 1 0.2 Typ. 0.9 1.4 1.6 30 10 5 4 6 20 23 Max. 10 1 2.5 1.4 2.1 2.4 S pF pF pF ns ns ns ns  Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, V GS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=0.25A, VGS=10V ID=0.15A, VGS=4.5V ID=0.15A, VGS=4V VDS=10V, ID=0.15A VDS=10V VGS=0V f=1MHz VDD 15V, ID=0.15A VGS=10V RL=100 RG=10 Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=0.1A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.08 - Rev.A RU1E002SP Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics ( Ⅰ) 0.25 Ta=25°C pulsed 0.2 Drain Current : -ID [A] VGS=-10.0V 0.15 VGS=-4.5V VGS=-4.0V 　 Data Sheet Fig.2 Typical Output Characteristics (Ⅱ) 0.25 VGS=-10.0V 0.2 VGS=-4.5V VGS=-4.0V Ta=25°C pulsed VGS=-2.5V Drain Current : -ID [A] 0.15 0.1 VGS=-2.5V 0.1 0.05 0.05 VGS=-2.0V 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : -VDS [V] 0 0 2 4 6 8 10 Drain-Source Voltage : -VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 10000 Ta=25°C pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=-4.0V VGS=-4.5V VGS=-10V Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 10000 VGS=-10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1000 1000 100 0.01 0.1 Drain Current : -ID [A] 1 100 0.01 0.1 Drain Current : -ID [A] 1 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 10000 VGS=-4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 10000 VGS=-4V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1000 1000 100 0.01 0.1 Drain Current : -ID [A] 1 100 0.01 0.1 Drain Current : -ID [A] 1 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/5 2011.08 - Rev.A RU1E002SP 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 1 VDS=-10V pulsed 1 Fig.8 Typical Transfer Characteristics VDS=-10V pulsed Forward Transfer Admittance Yfs [S] 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Drain Currnt : -ID [A] 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01 0.01 0.001 0.001 0.01 0.1 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Drain Current : -ID [A] Gate-Source Voltage : -VGS [V] Fig.9 Source Current vs. Source-Drain Voltage 1 VGS=0V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 5000 Ta=25°C pulsed 4000 ID=-0.15A ID=-0.25A 3000 Source Current : -Is [A] 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 2000 1000 0.01 0.0 0.5 1.0 1.5 2.0 Source-Drain Voltage : -VSD [V] 0 0 2 4 6 8 10 Gate-Source Voltage : -VGS [V] Fig.11 Switching Characteristics 1000 VDD≒-15V VGS=-10V RG=10Ω Ta=25°C Pulsed Capacitance : C [pF] td(off) 100 1000 Fig.12 Typical Capacitance vs. Drain-Source Voltage Ta=25°C f=1MHz VGS=0V tf Switching Time : t [ns] 100 Ciss Coss 10 10 td(on) 1 0.01 tr 1 0.1 Drain Current : -ID [A] 1 0.01 0.1 1 10 Crss 100 Drain-Source Voltage : -VDS [V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.08 - Rev.A RU1E002SP  Measurement circuits 　 Data Sheet Pulse width ID VGS RL D.U.T. RG VDD VDS VGS 10% 50% 10% 90% 50% 10% 90% VDS 90% td(on) ton tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.08 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A