JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate MOSFETS
CJK
3-channel MOSFET
V(BR)DSS
ID
RDS(on)MAX
SOT-23-3L
28mΩ@-4.5V
32mΩ@-3.7V
-6A
40mΩ@-2.5V
-12V
1. GATE
2. SOURCE
3. DRAIN
63mΩ@-1.8V
150mΩ@-1.5V
FEATURE
TrenchFET Power MOSFET
Excellent RDS(on) and Low Gate Charge
APPLICATION
DC/DC Converter
Load Switch for Portable Devices
Battery Switch
MARKING
Equivalent Circuit
Solid dot = Green molding compound device,
if none,the normal device.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
-12
V
Gate-Source Voltage
VGS
±8
V
Continuous Drain Current
ID
-6
A
Pulsed Drain Current (t=300µs)
IDM
-20
A
PD
0.4
W
RθJA
312.5
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
TJ
Storage Temperature
TSTG
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1
℃/W
150
℃
-55~ +150
℃
Rev. - 1.0
026)(7(/(&75,&$/&+$5$&7(5,67,&6
Ta =25 Я unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =-250µA
Zero gate voltage drain current
IDSS
VDS =-12V,VGS = 0V
-1
µA
Gate-body leakage current
IGSS
VGS =±8V, VDS = 0V
±0.1
µA
-1
V
Gate threshold voltage (note 1)
Drain-source on-resistance (note 1)
Forward tranconductance (note 1)
VGS(th)
RDS(on)
gFS
VDS =VGS, ID =-250µA
-12
V
-0.4
VGS =-4.5V, ID =-5A
22
28
VGS =-3.7V, ID =-4.6A
23
32
VGS =-2.5V, ID =-4.3A
26
40
VGS =-1.8V, ID =-1A
34
63
VGS =-1.5V, ID =-0.5A
43
150
VDS =-5V, ID =-5A
18
S
1275
pF
255
pF
236
pF
mΩ
Dynamic characteristics (note 2)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate resistance
Rg
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDS =-6V,VGS =0V,f =1MHz
f =1MHz
1.9
14
Ω
21
nC
2.3
nC
Qgd
3.6
nC
td(on)
26
40
ns
VDD=-6V,VGEN=-4.5V,ID=-4A
24
40
ns
RL=6Ω,RGEN=1Ω
45
70
ns
20
35
ns
-1.4
A
-20
A
-1.2
V
24
48
ns
8
16
nC
tr
td(off)
VDS =-6V,VGS =-4.5V,ID=-5A
19
tf
Source-Drain Diode characteristics
Diode forward current
IS
Diode pulsed forward current
ISM
Diode Forward voltage (note 1)
VDS
Diode reverse recovery time (note 2)
trr
Diode reverse recovery charge (note 2)
Qrr
Notes :
TC=25℃
VGS =0V, IS=-4A
IF=-4A,dI/dt=100A/µs
1. Pulse test; pulse width≤300μs, duty cycle≤2%.
2. Guaranteed by design, not subject to production testing.
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2
Rev. - 1.0
7\SLFDO&KDUDFWHULVWLFV
Output Characteristics
Transfer Characteristics
-20
-20
VGS = -5V、 -4V、 -3V、-2.5V、-2V
VDS=-3V
-16
-12
DRAIN CURRENT
DRAIN CURRENT
ID
ID
(A)
(A)
-16
VGS=-1.5V
-8
-4
-0
Ta=25℃
-12
-8
-4
-0
-1
-2
-3
DRAIN TO SOURCE VOLTAGE
-4
VDS
-0
-0.0
-5
-0.5
(V)
-1.0
-3.0
-5
-6
(m)
80
(m)
VGS=-1.5V
RDS(ON)
50
40
ON-RESISTANCE
RDS(ON)
ON-RESISTANCE
-2.5
(V)
90
Pulsed
VGS=-1.8V
30
VGS=-2.5V
20
VGS=-3.7V,-4.5V
-1
-2
-3
-4
ID
ID=-5A
70
60
50
40
Ta=100℃
30
20
Ta=25℃
10
-5
DRAIN CURRENT
-6
-7
0
-8
-0
(A)
-1
-2
VGS
(V)
-0.8
VTH
(V)
-1.0
Ta=100℃
THRESHOLD VOLTAGE
-1
Ta=25℃
-0.1
-0.2
-0.4
-0.6
-0.8
SOURCE TO DRAIN VOLTAGE
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-4
Threshold Voltage
IS —— VSD
-0.01
-0.0
-3
GATE TO SOURCE VOLTAGE
-10
IS (A)
VGS
100
Ta=25℃
10
-2.0
RDS(ON) —— VGS
RDS(ON) —— ID
60
-1.5
GATE TO SOURCE VOLTAGE
70
SOURCE CURRENT
Ta=100℃
-1.0
-1.2
-0.6
-0.4
-0.2
-0.0
25
-1.4
VSD (V)
ID=-250uA
50
75
JUNCTION TEMPERATURE
3
100
TJ
125
(℃ )
Rev. - 1.0
-3L
Symbol
A
A1
A2
b
c
D
E1
E
e
e1
L
Dimensions In Millimeters
Min.
Max.
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
1.500
1.700
2.650
2.950
0.950(BSC)
1.800
2.000
0.300
0.600
0°
8°
Dimensions In Inches
Min.
Max.
0.041
0.049
0.000
0.004
0.041
0.045
0.012
0.020
0.004
0.008
0.111
0.119
0.059
0.067
0.104
0.116
0.037(BSC)
0.071
0.079
0.012
0.024
0°
8°
-3L
NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
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4
Rev. - 1.0
SOT-23-3L Tape and Reel
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5
Rev. - 1.0
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