2N3906
Elektronische Bauelemente
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
PNP Silicon
General Purpose Transistor
TO-92
COLLECTOR
3
FEATURES
2
BASE 1 EMITTER
. Power Dissipation
PCM: 625 mW (Ta=25 )
1 2 3
. Collector Current
ICM: -200 mA
. Collector - Base Voltage
V(BR)CBO: -40 V
ELECTRICAL CHARACTERISTICS (TA = 25
Parameter Collector - Emitter Breakdown Voltage Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Transition Frequency Operating and Storage Junction Temperature Range SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT TJ, TSTG
unless otherwise specified)
Min. -40 -40 -5 100 60 250 Typ. -55 ~ +150 Max. -0.1 -0.1 -0.1 400 0.3 -0.95 UNIT V V V µA V V MHz
TEST CONDITIONS IC = -1 mA, IB = 0 A IC = -100 µA, IE = 0 A IE = -100 µA, IC = 0 A VCB = -40 V, IE = 0 A VCE = -40 V, IB = 0 A VEB = -5 V, IC = 0 A VCE = -1 V, IC = -10 mA VCE = -1 V, IC = -50 mA IC = -50 mA, IB = -5 mA IC = -50 mA, IB = -5 mA VCE = -20 V, IC = -10 mA f = 100 MHz -
CLASSIFICATION OF hFE(1)
Rank Rang O 100 ~ 200 Y 200 ~ 300 G 300 ~ 400
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 3
2N3906
Elektronische Bauelemente PNP Silicon
General Purpose Transistor
TYPICAL CHARACTERISTICS
3V +9.1 V < 1 ns +0.5 V 10 k CS < 4 pF* 300 ns DUTY CYCLE = 2% 10 < t1 < 500 ms DUTY CYCLE = 2% t1 275 0
< 1 ns
3V 275 10 k CS < 4 pF*
10.6 V
10.9 V
* Total shunt capacitance of test jig and connectors
Delay and Rise Time Equivalent Test Circuit
Storage and Fall Time Equivalent Test Circuit
h FE, DC CURRENT GAIN (NORMALIZED)
2.0
TJ = +125°C +25°C -55°C
VCE = 1.0 V
1.0 0.7 0.5 0.3 0.2
0.1 0.1
0.2
0.3
0.5
0.7
1.0
2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA)
20
30
50
70
100
200
DC Current Gain
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 3
2N3906
Elektronische Bauelemente PNP Silicon
General Purpose Transistor
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
1.0 TJ = 25°C 0.8 0.6 0.4 0.2 0 0.01 IC = 1.0 mA 10 mA 30 mA 100 mA
0.02
0.03
0.05
0.07
0.1
0.2 0.3 0.5 IB, BASE CURRENT (mA)
0.7
1.0
2.0
3.0
5.0
7.0
10
Collector Saturation Region
TJ = 25°C
VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V
q V , TEMPERATURE COEFFICIENTS (mV/ °C)
1.0 0.8 V, VOLTAGE (VOLTS) 0.6 0.4 0.2 0
1.0 0.5 0 -0.5 +25°C TO +125°C -1.0 -1.5 -2.0 0 20 qVB FOR VBE(sat) 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 180 200 -55°C TO +25°C qVC FOR VCE(sat) +25°C TO +125°C -55°C TO +25°C
VCE(sat) @ IC/IB = 10
1.0
2.0
50 5.0 10 20 IC, COLLECTOR CURRENT (mA)
100
200
“ON” Voltages
Temperature Coefficients
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 3 of 3
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