SBW13009

SemiWell Semiconductor SBW13009 High Voltage Fast-Switching NPN Power Transistor Features - Very High Switching Speed (Typical 40ns@8.0A) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 320mV@8.0A/1.6A) - Wide Reverse Bias S.O.A Symbol ○ 2.Collector 1.Base ○ ○ 3.Emitter General Description This device is designed for high voltage, high speed switching characteristic required such as switching mode power supply. TO-247 1 2 3 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICM IB IBM PC TSTG TJ Parameter Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Voltage ( IB = 0 ) Emitter-Base Voltage ( IC = 0 ) Collector Current Collector Peak Current ( tP ＜ 10 ms ) Base Current Base Peak Current ( tP ＜ 10 ms ) Total Dissipation at TC = 25 °C Storage Temperature Max. Operating Junction Temperature Value 700 400 9.0 12 25 6.0 12 130 - 65 ~ 150 150 Units V V V A A A A W °C °C Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Value 0.96 40 Units °C/W °C/W Oct, 2002. Rev. 2 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved 1/6 SBW13009 Electrical Characteristics Symbol ICEV VCEO(sus) ( TC = 25 °C unless otherwise noted ) Parameter Collector Cut-off Current ( VBE = - 1.5V ) Collector-Emitter Sustaining Voltage ( IB = 0 ) Condition VCE = 700V VCE = 700V IC = 10 mA IC = 5.0A IC = 8.0A IC = 12A IC = 8.0A IB = 1.0A IB = 1.6A IB = 3.0A IB = 1.6A TC = 100 °C IB = 1.0A IB = 1.6A IB = 1.6A TC = 100 °C VCE = 5V VCE = 5V VCC = 125V IB2 = - 1.6A TC = 100 °C Min - Typ - Max 1.0 5.0 - Units mA 400 - V VCE(sat) Collector-Emitter Saturation Voltage - - 0.5 1.0 1.5 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC = 5.0A IC = 8.0A IC = 8.0A - - 1.2 1.6 1.5 V hFE DC Current Gain Resistive Load Storage Time Fall Time Inductive Load Storage Time Fall Time Inductive Load Storage Time Fall Time IC = 5.0A IC = 8.0A IC = 8.0A IB1 = 1.6A T P = 2 5㎲ VCC = 15V IB1= 1.6A LC = 0.2mH VCC = 15V IB1= 1.6A LC = 0.2mH 10 6 - 30 30 ts tf - 1.5 0.16 3.0 0.4 ㎲ ts tf IC = 8.0A VBE(off) = 5V Vclamp = 300V IC = 8.0A VBE(off) = 5V Vclamp = 300V TC = 100 °C - 0.6 0.04 2.0 0.1 ㎲ ts tf - 0.8 0.05 2.5 0.15 ㎲ ※ Notes : Pulse Test : Pulse width ≤ 300㎲, Duty cycle ≤ 2% 2/6 SBW13009 Fig 1. Static Characteristics 18 16 14 IB = 2000mA IB = 1600mA IB = 1200mA IB = 1000mA 10 8 6 4 2 0 IB = 200mA IB = 800mA IB = 600mA IB = 400mA 45 40 35 o Fig 2. DC Current Gain IC, Collector Current [A] 12 hFE, DC Current Gain TJ = 125 C 30 25 20 15 ※ Notes : TJ = 25 C o 10 5 0 0.01 VCE = 5V VCE = 1V IB = 0mA 0 1 2 3 4 5 6 7 8 9 10 0.1 1 10 VCE, Collector-Emitter Voltage [V] IC, Collector Current [A] Fig 3. Collector-Emitter Saturation Voltage 1.4 10 Fig 4. Base-Emitter Saturation Voltage VCE, Collector-Emitter Voltage [V] VBE, Base-Emitter Voltage [V] 1.2 1.0 1 TJ = 25 C o TJ = 125 C o 0.8 0.1 ※ Note : hFE = 5 0.6 TJ = 125 C 0.4 ※ Note : hFE = 5 o TJ = 25 C 0.01 0.1 1 o 10 0.2 0.1 1 10 IC, Collector Current [A] IC, Collector Current [A] Fig 5. Resistive Load Fall Time 1000 Fig 6. Resistive Load Storage Time 10 ※ Notes : VCC = 125V hFE = 5 IB1 = - IB2 t, Time [ns] t, Time [us] TJ = 25 C 100 o TJ = 25 C o ※ Notes : VCC = 125V hFE = 5 IB1 = - IB2 1 10 0 2 4 6 8 10 12 14 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 IC, Collector Current [A] IC, Collector Current [A] 3/6 SBW13009 Fig 7. Safe Operation Areas 10 2 Fig 8. Reverse Biased Safe Operation Areas 15 ※ Notes : TC ≤ 100 °C Gain ≥ 4 LC = 0.5 mH 12 IC, Collector Current [A] 10 µs 0 IC, Collector Current [A] 10 1 9 10 DC 100 µs VBE(off) 6 -5V -3V -1.5V 10 -1 1ms ※ Single Pulse 3 10 -2 10 0 10 1 10 2 10 3 0 0 100 200 300 400 500 600 700 800 VCE, Collector-Emitter Clamp Voltage [V] VCE, Collector-Emitter Clamp Voltage [V] Fig 9. Power Derating Curve 125 Power Derating Factor (%) 100 75 50 25 0 0 50 100 150 o 200 TC, Case Temperature ( C) 4/6 SBW13009 Inductive Load Switching & RBSOA Test Circuit LC IB1 IC IB VCE D.U.T RBB VBE(off) VClamp VCC Resistive Load Switching Test Circuit RC IB1 IC IB VCE D.U.T RBB VBE(off) VCC 5/6 SBW13009 TO-247 Package Dimension mm Min. 15.77 20.80 20.05 4.48 4.27 5.32 4.90 1.90 2.35 0.6 1.2 1.07 2.99 3.56 1.33 1.33 3.25 3.66 0.047 0.042 0.118 0.140 Typ. Max. 16.03 21.10 20.31 4.58 4.37 5.58 5.16 2.06 2.45 Min. 0.621 0.819 0.789 0.176 0.168 0.209 0.193 0.075 0.093 0.024 0.052 0.052 0.128 0.144 Inch Typ. Max. 0.631 0.831 0.800 0.180 0.172 0.220 0.203 0.081 0.096 Dim. A B C D E F G H I J K L M φ G A H B D φ I E 1 2 3 L C M 1. Base 2. Collector 3. Emitter F J K 6/6