STP12A60

SemiWell Semiconductor Bi-Directional Triode Thyristor STP12A60 Symbol Features Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 12 A ) ◆ High Commutation dv/dt ◆ ◆ ○ 2.T2 ▼ ▲ ○ 3.Gate 1.T1 ○ General Description This device is suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. TO-220 1 2 3 Absolute Maximum Ratings Symbol VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Ratings 600 TC = 100 °C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 12 119/130 71 5.0 0.5 2.0 10 - 40 ~ 125 - 40 ~ 150 2.0 Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2 t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Mass Units V A A A2 s W W A V °C °C g Feb, 2003. Rev. 2 copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. 1/5 STP12A60 Electrical Characteristics Symbol Items Repetitive Peak Off-State Current Peak On-State Voltage Ⅰ Ⅱ Ⅲ Ⅰ Ⅱ Ⅲ Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Junction to case TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C, [di/dt]c = -6.0 A/ms, VD=2/3 VDRM Gate Trigger Voltage VD = 6 V, RL=10 Ω Gate Trigger Current VD = 6 V, RL=10 Ω Conditions VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 20 A, Inst. Measurement Ratings Min. ─ ─ ─ ─ ─ ─ ─ ─ 0.2 10 ─ ─ Typ. ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ 20 ─ Max. 2.0 1.4 30 30 30 1.5 1.5 1.5 ─ ─ ─ 1.8 Unit IDRM VTM I+GT1 I -GT1 I -GT3 V+GT1 V-GT1 V-GT3 VGD (dv/dt)c IH Rth(j-c) mA V mA V V V/㎲ mA °C/W 2/5 STP12A60 Fig 1. Gate Characteristics Fig 2. On-State Voltage 10 1 VGM (10V) On-State Current [A] 10 2 Gate Voltage [V] PGM (5W) PG(AV) (0.5W) 25 ℃ 10 0 TJ = 125 C 10 1 o IGM (2A) TJ = 25 C 10 0 o 10 -1 VGD (0.2V) 1 10 10 2 10 3 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate Current [mA] On-State Voltage [V] Fig 3. On State Current vs. Maximum Power Dissipation 16 14 130 Fig 4. On State Current vs. Allowable Case Temperature Allowable Case Temperature [ oC] θ = 180 o θ = 150 o θ = 120 θ = 90 θ = 60 θ = 30 o o o Power Dissipation [W] π 12 10 8 6 4 2 0 θ 2π 120 θ 360° 110 θ : Conduction Angle o 100 θ = 30 o π 90 θ 2π θ = 60 θ θ θ θ 8 10 12 o θ 360° 80 θ : Conduction Angle = 90 o = 120 o = 150 o = 180 14 o 0 2 4 6 8 10 12 14 70 0 2 4 6 RMS On-State Current [A] RMS On-State Current [A] Fig 5. Surge On-State Current Rating ( Non-Repetitive ) 200 Fig 6. Gate Trigger Voltage vs. Junction Temperature 10 Surge On-State Current [A] 150 VGT (t C) o o 60Hz 100 VGT (25 C) V 1 _ GT3 V V + GT1 _ GT1 50 50Hz 0 0 10 10 1 10 2 0.1 -50 0 50 100 o 150 Time (cycles) Junction Temperature [ C] 3/5 STP12A60 Fig 7. Gate Trigger Current vs. Junction Temperature 10 10 Fig 8. Transient Thermal Impedance 1 I I + GT1 _ GT1 Transient Thermal Impedance [ C/W] IGT (25 C) IGT (t C) o o o 1 I 0.1 -50 _ GT3 0 50 100 o 150 0.1 -2 10 10 -1 10 0 10 1 10 2 Junction Temperature [ C] Time (sec) Fig 9. Gate Trigger Characteristics Test Circuit 10Ω 10Ω 10Ω ▼ ▲ 6V ● A ▼ ▲ RG 6V ● A ▼ ▲ RG 6V ● A V ● V ● V ● RG Test Procedure Ⅰ Test Procedure Ⅱ Test Procedure Ⅲ 4/5 STP12A60 TO-220 Package Dimension mm Typ. Inch Typ. Dim. A B C D E F G H I J K L M N O Min. 9.7 6.3 9.0 12.8 1.2 Max. 10.1 6.7 9.47 13.3 1.4 Min. 0.382 0.248 0.354 0.504 0.047 Max. 0.398 0.264 0.373 0.524 0.055 1.7 2.5 3.0 1.25 2.4 5.0 2.2 1.25 0.45 0.6 3.6 3.4 1.4 2.7 5.15 2.6 1.55 0.6 1.0 0.118 0.049 0.094 0.197 0.087 0.049 0.018 0.024 0.067 0.098 0.134 0.055 0.106 0.203 0.102 0.061 0.024 0.039 0.142 φ E B A H I φ F C M G 1 D 2 3 L 1. T1 2. T2 3. Gate N O J K 5/5