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STP12NM60N

STP12NM60N

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT78

  • 描述:

    MOSFET N-CH 600V 10A TO-220

  • 数据手册
  • 价格&库存
STP12NM60N 数据手册
STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh™ Power MOSFET Features Type VDSS (@Tjmax) RDS(on) ID 3 3 12 1 STB12NM60N 650V < 0.41Ω 10A STB12NM60N-1 650V < 0.41Ω 10A STF12NM60N 650V < 0.41Ω 10A(1) STP12NM60N 650V < 0.41Ω 10A STW12NM60N 650V < 0.41Ω 10A D²PAK I²PAK TO-247 3 1. Limited only by maximum temperature allowed 1 c u d 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance e t le 1 2 TO-220FP TO-220 ■ ) s t( 3 2 o r P Internal schematic diagram Description o s b O - This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. ) s ( ct Application ■ u d o r P e Switching application t e l o Order codes s b O Part number Marking Package Packaging STB12NM60N B12NM60N D²PAK Tape & reel STB12NM60N-1 B12NM60N I²PAK Tube STF12NM60N F12NM60N TO-220FP Tube STP12NM60N P12NM60N TO-220 Tube STW12NM60N W12NM60N TO-247 Tube April 2007 Rev 2 1/18 www.st.com 18 Contents STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit ................................................ 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 c u d e t le ) s ( ct u d o r P e t e l o s b O 2/18 o s b O - o r P ) s t( STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter D²PAK/I²PAK TO-220FP TO-220/TO-247 Unit VDS Drain-source voltage (VGS=0) 600 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25°C 10 10 (1) A ID Drain current (continuous) at TC = 100°C 6.3 6.3 (1) A IDM (2) Drain current (pulsed) 40 40 (1) A PTOT Total dissipation at TC = 25°C 90 25 W dv/dt (3) VISO Tj Tstg Peak diode recovery voltage slope uc Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) 15 -- r P e t le Operating junction temperature Storage temperature od ) s t( 2500 V/ns V -55 to 150 °C D²PAK/I²PAK TO-220FP TO-220/TO-247 Unit o s b O - 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤10A, di/dt ≤400A/µs, VDD =80% V(BR)DSS Table 2. ) s ( ct Thermal data Symbol u d o Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max 62.5 °C/W Maximum lead temperature for soldering purpose 300 °C Max value Unit r P e s b O t e l o Tl Table 3. Symbol 1.38 5 °C/W Avalanche characteristics Parameter IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 3.5 A EAS Single pulse avalanche energy (starting Tj=25°C, ID=IAS, VDD= 50V) 200 mJ 3/18 Electrical characteristics 2 STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS dv/dt(1) Parameter Drain-source breakdown voltage Drain-source voltage slope Max. 600 Unit VDD = 400V,ID = 10A, V 41 VGS = 10V VDS = Max rating, V/ns Gate body leakage current (VDS = 0) VGS = ±20V 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 3 4 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 5A 0.35 0.41 Ω Typ. Max. Unit IGSS Characteristics value at turn off on inductive load e t le Dynamic Symbol so Parameter gfs(1) Forward transconductance Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance c u d (t s) Test conditions b O - VDS =15V, ID= 5A VDS = 50V, f =1MHz, VGS = 0 Equivalent output capacitance VGS = 0, VDS = 0V to 480V Rg Gate input resistance f=1MHz Gate DC Bias=0 Test signal level=20mV open drain Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge Coss eq.(2) o r P e t e l o 4/18 Typ. 1 10 Zero gate voltage drain current (VGS = 0) Table 5. 1. ID = 1mA, VGS= 0 Min. VDS = Max rating,@125°C IDSS 1. s b O Test conditions VDD = 480V, ID = 10A VGS = 10V (see Figure 18) 2 o r P c u d Min. µA µA ) s t( 8 S 960 65 7 pF pF pF 180 pF 5 Ω 30.5 5 16 nC nC nC Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N Table 6. Switching times Symbol td(on) tr td(off) tf Table 7. Electrical characteristics Parameter Test conditions Turn-on delay time Rise time Turn-off delay time Fall time Min 15 9 60 10 VDD = 300V, ID = 5A, RG = 4.7Ω, VGS = 10V (see Figure 17) Parameter Test conditions Min ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD = 10A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD =10A, di/dt =100A/µs, VDD = 100V, Tj = 25°C (see Figure 19) Reverse recovery time Reverse recovery charge Reverse recovery current VDD = 100V di/dt =100A/µs, ISD = 10A Tj = 150°C (see Figure 19) IRRM trr Qrr IRRM e t le 1. Pulse width limited by safe operating area 2. Max Unit ns ns ns ns Source drain diode Symbol trr Qrr Typ Pulsed: pulse duration = 300µs, duty cycle 1.5% ) s ( ct Typ 360 3.5 20 Max Unit 10 40 A A 1.3 V o r P c u d 530 5.20 20 ) s t( ns µC A ns µC A o s b O - u d o r P e t e l o s b O 5/18 Electrical characteristics STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220 / D²PAK / I²PAK Figure 3. Figure 2. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220 / D²PAK / I²PAK Thermal impedance for TO-220FP c u d e t le ) s ( ct Figure 5. r P e Safe operating area for TO-247 t e l o s b O 6/18 u d o ) s t( o r P o s b O Figure 6. Thermal impedance for TO-247 STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N Electrical characteristics Figure 7. Output characteristics Figure 8. Transfer characteristics Figure 9. Transconductance Figure 10. Static drain-source on resistance c u d e t le ) s ( ct u d o Figure 11. Gate charge vs. gate-source voltage ) s t( o r P o s b O - Figure 12. Capacitance variations r P e t e l o s b O 7/18 Electrical characteristics STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N Figure 13. Normalized gate threshold voltage vs. temperature Figure 14. Normalized on resistance vs. temperature Figure 15. Source-drain diode forward characteristics Figure 16. Normalized BVDSS vs. temperature c u d e t le ) s ( ct u d o r P e t e l o s b O 8/18 o s b O - o r P ) s t( STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N 3 Test circuit Test circuit Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit c u d ) s t( Figure 19. Test circuit for inductive load Figure 20. Unclamped Inductive load test switching and diode recovery times circuit e t le ) s ( ct u d o Figure 21. Unclamped inductive waveform r P e o r P o s b O - Figure 22. Switching time waveform t e l o s b O 9/18 Package mechanical data 4 STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com c u d e t le ) s ( ct u d o r P e t e l o s b O 10/18 o s b O - o r P ) s t( STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N Package mechanical data TO-220 MECHANICAL DATA mm. DIM. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 ) s t( H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 L20 L30 d o r 0.645 28.90 1.137 øP 3.75 3.85 Q 2.65 2.95 ) s ( ct 0.147 P e let 0.104 uc 0.154 16.40 0.151 0.116 o s b O - u d o r P e t e l o s b O 11/18 Package mechanical data STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 16 0.630 L3 28.6 30.6 1.126 L4 9.8 10.6 .0385 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Ø 3 3.2 1.204 0.114 r P e t le 0.626 0.354 od 0.141 0.645 0.366 0.118 o s b O - 0.126 s b O 12/18 G G1 F F2 t e l o L7 H o r P e du L3 L6 F1 B ) s ( ct L2 L5 ) s t( 0.417 D A L5 uc E L2 1 2 3 L4 STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N Package mechanical data TO-262 (I2PAK) MECHANICAL DATA mm. inch DIM. MAX. MIN. A 4.40 MIN. TYP 4.60 0.173 TYP. MAX. A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 0.181 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 L2 1.27 1.40 0.050 e t le ) s ( ct c u d ) s t( 0.154 0.055 o r P o s b O - u d o r P e t e l o s b O 13/18 Package mechanical data STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 10 0.315 E1 10.4 8.5 0.334 G 4.88 5.28 0.192 L 15 15.85 0.590 L2 1.27 1.4 L3 1.4 1.75 M 2.4 V2 0.4 0º so b O 4º ) s ( ct e t le 0.050 o r P 0.055 3.2 R c u d 0.393 ) s t( 0.208 0.625 0.055 0.068 0.094 0.126 0.015 u d o r P e s b O 3 t e l o 1 14/18 STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N Package mechanical data TO-247 MECHANICAL DATA mm. DIM. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 0.620 0.214 ) s t( L 14.20 14.80 0.560 0.582 L1 3.70 4.30 0.14 0.17 L2 18.50 3.55 3.65 0.140 øR 4.50 5.50 0.177 S 5.50 0.143 o r P 0.216 0.216 e t le ) s ( ct c u d 0.728 øP o s b O - u d o r P e t e l o s b O 15/18 Packaging mechanical data 5 STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT c u d REEL MECHANICAL DATA DIM. mm MIN. A ro MAX. 330 P e let B 1.5 C 12.8 D 20.2 G 24.4 N 100 o s b O - T TAPE MECHANICAL DATA mm DIM. MAX. MIN. 10.5 10.7 0.413 0.421 B0 15.7 15.9 D 1.5 1.6 0.059 0.063 1.59 1.61 0.062 0.063 1.65 1.85 0.065 0.073 11.4 11.6 0.449 0.456 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 K0 MAX. od r P e t e l o F 0.618 0.626 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 16/18 t c u MIN. E O (s) A0 D1 bs inch 0.933 0.956 inch MIN. MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 ) s t( STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N 6 Revision history Revision history Table 8. Revision history Date Revision Changes 26-Mar-2007 1 First release 23-Apr-2007 2 Complete version c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O 17/18 STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ) s t( Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. c u d No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. e t le o r P UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. o s b O - UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. ) s ( ct u d o Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. r P e t e l o ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. bs The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. O © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 18/18
STP12NM60N 价格&库存

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